Zobrazeno 1 - 10
of 12
pro vyhledávání: '"James T. Clemens"'
Autor:
James T. Clemens
Publikováno v:
Bell Labs Technical Journal. 2:76-102
Two inventions — the bipolar transistor and the integrated circuit — have fundamentally revolutionized the technology of mankind. Within a period of fifty years, the microelectronics industry has increased the number of transistors fabricated on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::091ab99015bf767bf902453834659577
https://doi.org/10.1002/bltj.2084
https://doi.org/10.1002/bltj.2084
Autor:
C.P. Chang, W.Y.C. Lai, E.J. Lloyd, F.P. Klemens, K.P. Cheung, Philip W. Diodato, J. Frackoviak, M. Oh, R. Liu, J.F. Miner, Yi Ma, Hem M. Vaidya, Allen G. Timko, F. Li, J.R. Mcmacken, K.R. Stiles, J.I. Colonell, C.S. Pai, James T. Clemens, H.L. Maynard, C.T. Liu
Publikováno v:
International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).
Multiple t/sub OX/ is thoroughly investigated for nitrogen-implanted gate oxides with the optimization of Q/sub BD/ and a demonstration of 2 GHz counters. Furnace growth at 800/spl deg/C, 850/spl deg/C, and 900/spl deg/C is compared with rapid-therma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e8dafc03aaaee2dd94b48aa33cdbfb7
https://doi.org/10.1109/iedm.1998.746427
https://doi.org/10.1109/iedm.1998.746427
Autor:
W.S. Lindenberger, A.C. Dumbri, L. Noda, K.-H. Lee, W.W. Troutman, Y.-H. Wong, C.-T. Liu, J.M. Drynan, R. Dail, James T. Clemens, M.V. Depaolis, M. Nakamae, Philip W. Diodato
Publikováno v:
Proceedings. International Workshop on Memory Technology, Design and Testing (Cat. No.98TB100236).
The desire to enhance memory bandwidth in high performance computing components is overwhelming, and early attempts to combine large memories with high performance logic in a single silicon integrated circuit are numerous. However, existing implement
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eed8a80b601df1e75c5fcc8a96420f77
https://doi.org/10.1109/mtdt.1998.705942
https://doi.org/10.1109/mtdt.1998.705942
Autor:
W.Y.C. Lai, J.I. Colonell, C.P. Chang, C.T. Liu, K.P. Cheung, Hem M. Vaidya, James T. Clemens, A. Ghetti, C.S. Pai, R. Liu, Yi Ma, G. B. Alers
Publikováno v:
International Electron Devices Meeting. IEDM Technical Digest.
In devices with p+ gates and p- substrates, two unique conditions exist such that the intrinsic and stress-induced traps can be probed and separated in the direct tunneling current. The first condition is that E/sub F/ is initially below the midgap e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49cfc4001b29f706b3564af928b15ce6
https://doi.org/10.1109/iedm.1997.649470
https://doi.org/10.1109/iedm.1997.649470
Autor:
V. Pol, M. Feldman, V.A. Firtion, James T. Clemens, James H. Bennewitz, Tanya E. Jewell, G.C. Escher, B.E. Wilcomb
Publikováno v:
1986 International Electron Devices Meeting.
A deep ultraviolet step and repeat system, operating at 248.4 nm, has been developed by retrofitting a commercial system with a KrF excimer laser and custom designed fused silica condenser and projection optics. The 5X projection lens has a minimum f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::333cbaaef884b774d74eadb74adfbd3f
https://doi.org/10.1109/iedm.1986.191178
https://doi.org/10.1109/iedm.1986.191178
Autor:
James T. Clemens, Bruce E. Wilcomb, Gary C. Escher, James H. Bennewitz, Tanya E. Jewell, Martin Feldman, Victor Andrew Firtion, Victor Pol
Publikováno v:
SPIE Proceedings.
A deep UV projection system has been developed by modifying a commercial step and repeat exposure tool to operate at 248nm with an all-quartz lens and a KrF excimer laser. The lens is a 5X reduction lens with a minimum field size of 14.5 mm and a num
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f622e34ee398d21fd2e00f0f6d0079ba
https://doi.org/10.1117/12.963697
https://doi.org/10.1117/12.963697
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