Zobrazeno 1 - 10
of 42
pro vyhledávání: '"James T, Teherani"'
Autor:
Mark E. Ziffer, Kenji Watanabe, Amirali Zangiabadi, Ipshita Datta, Younghun Jung, Bumho Kim, Apoorv Jindal, Myeongjin Lee, Min Sup Choi, Michal Lipson, James T. Teherani, James Hone, Ioannis Kymissis, Maya N. Nair, Xiaoyang Zhu, Ankur Nipane, Zachary A. Lamport, Daniel Rhodes, Abhinandan Borah, Abhay Pasupathy, B. Kim, Takashi Taniguchi, Won Jong Yoo
Publikováno v:
Nature Electronics. 4:731-739
Doped graphene could be of use in next-generation electronic and photonic devices. However, chemical doping cannot be precisely controlled in the material and leads to external disorder that diminishes carrier mobility and conductivity. Here we show
Publikováno v:
ACS Applied Electronic Materials. 3:2941-2947
Autor:
Won Jong Yoo, Minwoong Joe, Budhi Singh, James T. Teherani, D. J. P. de Sousa, Pawan Kumar Srivastava, Subhasis Ghosh, Yasir Hassan, Yisehak Gebredingle, Changgu Lee, Yang Zheng, Fida Ali, Tony Low
Publikováno v:
Nature Electronics. 4:269-276
Atomically thin materials can be used to build novel forms of conventional semiconductor heterostructure devices. One such device is a resonant tunnelling diode, which can exhibit negative differential resistance and usually consists of a quantum-wel
Autor:
Younghun Jung, Bumho Kim, Won Jong Yoo, Amirali Zangiabadi, Abhinandan Borah, P. James Schuck, Kevin W. C. Kwock, Anjaly Rajendran, Kaiyuan Yao, Min Sup Choi, Ankur Nipane, James Hone, James T. Teherani, Vinod M. Menon, Punnu Jose Sebastian, Prathmesh Deshmukh
Publikováno v:
ACS Applied Materials & Interfaces. 13:1930-1942
The development of a controllable, selective, and repeatable etch process is crucial for controlling the layer thickness and patterning of two-dimensional (2D) materials. However, the atomically thin dimensions and high structural similarity of diffe
Autor:
James T. Teherani, B. Kim, Takashi Taniguchi, Abhay Pasupathy, Bumho Kim, Zachary A. Lamport, Younghun Jung, Won Jong Yoo, Min Sup Choi, Maya N. Nair, Michal Lipson, Xiaoyang Zhu, Kenji Watanabe, Ioannis Kymissis, Amirali Zangiabadi, Ipshita Datta, Apoorv Jindal, Abhinandan Borah, Daniel Rhodes, James Hone, Myeongjin Lee, Mark E. Ziffer, Ankur Nipane
Highly doped graphene holds promise for next-generation electronic and photonic devices. However, chemical doping cannot be precisely controlled, and introduces external disorder that significantly diminishes the carrier mobility and therefore the gr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4aac8c756143df6d257fa61d84acd101
https://doi.org/10.21203/rs.3.rs-128783/v1
https://doi.org/10.21203/rs.3.rs-128783/v1
Autor:
Takashi Taniguchi, Min Sup Choi, Abhinandan Borah, Younghun Jung, Bumho Kim, James Hone, Won Jong Yoo, Kenji Watanabe, Amirali Zangiabadi, Ankur Nipane, James T. Teherani
Publikováno v:
Nature Electronics. 2:187-194
Two-dimensional semiconductors have a number of valuable properties that could be used to create novel electronic devices. However, creating 2D devices with good contacts and stable performance has proved challenging. Here we show that transferred vi
Autor:
Yunseok Kim, James T. Teherani, Myeongjin Lee, Chang Sik Kim, Inyong Moon, Geun Young Yeom, Ki-Hyun Kim, Daehee Seol, Sung Won Lee, James Hone, Won Jong Yoo
Publikováno v:
Nanoscale. 11:17368-17375
Tungsten diselenide (WSe2) has received significant attention because it shows the pristine ambipolar property arising from the Fermi level located near the midgap and can be converted to uni-polar form. In this study, we observe the formation of tun
Autor:
Ankur, Nipane, Min Sup, Choi, Punnu Jose, Sebastian, Kaiyuan, Yao, Abhinandan, Borah, Prathmesh, Deshmukh, Younghun, Jung, Bumho, Kim, Anjaly, Rajendran, Kevin W C, Kwock, Amirali, Zangiabadi, Vinod M, Menon, P James, Schuck, Won Jong, Yoo, James, Hone, James T, Teherani
Publikováno v:
ACS applied materialsinterfaces. 13(1)
The development of a controllable, selective, and repeatable etch process is crucial for controlling the layer thickness and patterning of two-dimensional (2D) materials. However, the atomically thin dimensions and high structural similarity of diffe
Publikováno v:
IEEE Transactions on Electron Devices. 65:4209-4215
Stacks of 2-D materials, known as van der Waals (vdW) heterostructures, have gained vast attention due to their interesting electrical and optoelectronic properties. This paper presents an intuitive circuit model for the out-of-plane electrostatics o
Author Correction: High carrier mobility in graphene doped using a monolayer of tungsten oxyselenide
Autor:
Ankur Nipane, B. Kim, Takashi Taniguchi, Myeongjin Lee, Younghun Jung, Bumho Kim, Abhay Pasupathy, Amirali Zangiabadi, Ipshita Datta, Ioannis Kymissis, Apoorv Jindal, Mark E. Ziffer, Maya N. Nair, Abhinandan Borah, Xiaoyang Zhu, Kenji Watanabe, Daniel Rhodes, Min Sup Choi, Michal Lipson, Won Jong Yoo, James Hone, Zachary A. Lamport, James T. Teherani
Publikováno v:
Nature Electronics. 4:931-931