Výsledky vyhledávání - "James Scofield"

2 KV 4H-SiC DMOSFETS FOR LOW LOSS, HIGH FREQUENCY SWITCHING APPLICATIONS

Autor: John W. Palmour, James Richmond, Anant K. Agarwal, James Scofield, Mrinal K. Das, Sei-Hyung Ryu, Sumi Krishnaswami

Publikováno v: International Journal of High Speed Electronics and Systems. 14:879-883

Due to the high critical field in 4 H - SiC , the drain charge and switching loss densities in a SiC power device are approximately 10X higher than that of a silicon device. However, for the same voltage and resistance ratings, the device area is muc

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b3388bb50e4ba3d26851d5c4d09262be
https://doi.org/10.1142/s0129156404002983

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2 kV 4H-SiC DMOSFETs for low loss, high frequency switching applications

Autor: Anant K. Agarwal, James Richmond, James Scofield, Sei-Hyung Ryu, Mrinal K. Das, Sumi Krishnaswami, John W. Palmour

Publikováno v: Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004..

Due to the high critical field in 4H-SiC, the drain charge and switching loss densities in a SiC power device are approximately 10/spl times/ higher than that of a silicon device. However, for the same voltage and resistance ratings, the device area

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7751367d8350b59a536cac4055f0d5d1
https://doi.org/10.1109/lechpd.2004.1549703

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