Zobrazeno 1 - 10
of 24
pro vyhledávání: '"James Schellenberg"'
Publikováno v:
2019 IEEE MTT-S International Microwave Symposium (IMS).
This paper reports the design and performance of state-of-the-art GaN MMICs and a fully packaged Ka-band SSPA. Incorporating harmonic tuning, the MMICs produce power levels up to 10 W CW with efficiencies in the high thirties (42% peak) at frequencie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3725ad95ff35a1d9a93f9576f3239091
https://doi.org/10.1109/mwsym.2019.8701005
https://doi.org/10.1109/mwsym.2019.8701005
Publikováno v:
2018 IEEE/MTT-S International Microwave Symposium - IMS.
This paper reports the design and performance of two new GaN MMIC amplifiers operating at F-band frequencies. The first design produces 28–29 dBm from 102 to 118 GHz, while the second, a broadband design, produces a minimum of 25 dBm across the 98
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::628d986fd5b24dbf045f45c82c8b9a21
https://doi.org/10.1109/mwsym.2018.8439280
https://doi.org/10.1109/mwsym.2018.8439280
Publikováno v:
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
This paper presents the design and performance of two millimeter-wave LNAs using 35nm InP HEMT device technology. First, a single-ended 3-stage LNA, operating over the 81-86 GHz band, is reported with a noise figure (NF) of 1.6-1.9 dB and a gain of 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa411573fb07418bdaca9665afea03da
https://doi.org/10.1109/csics.2016.7751007
https://doi.org/10.1109/csics.2016.7751007
Publikováno v:
2016 IEEE MTT-S International Microwave Symposium (IMS).
This paper reports the first broadband, high-power solid-state power amplifier operating at W-band (75–110 GHz) frequencies. Utilizing a new broadband GaN MMIC chip, we report a radial combiner that effectively combines 24 of these MMICs. This ampl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3eb26d5d67756f4a9dd9d3bc3883b982
https://doi.org/10.1109/mwsym.2016.7540195
https://doi.org/10.1109/mwsym.2016.7540195
Publikováno v:
IEEE Microwave Magazine. 11:52-66
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d1d96af3d30e5a4091c152012810165
https://doi.org/10.1109/mmm.2010.936082
https://doi.org/10.1109/mmm.2010.936082
Autor:
Carl Creamer, Christopher Koh, James Schellenberg, P.M. Smith, K. H. Duh, M. Ashman, P.C. Chao, Dong Xu, Kanin Chu, Xiaoping Yang
Publikováno v:
2014 IEEE MTT-S International Microwave Symposium (IMS2014).
A 50nm MHEMT millimeter-wave MMIC low noise amplifier with state-of-the-art performance is reported. The 3-stage LNA exhibits on-wafer noise figure (NF) as low as 1.6dB with 25dB gain at 80GHz, and also shows unprecedented wideband performance, with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a7d9e50e2162f0ae05ac90df83bd58b
https://doi.org/10.1109/mwsym.2014.6848288
https://doi.org/10.1109/mwsym.2014.6848288
Autor:
Bryan McIntosh, James Schellenberg, Jonathan D. Thiessen, Andrew L. Goertzen, Michael J. Simpson
Publikováno v:
2013 IEEE Nuclear Science Symposium and Medical Imaging Conference (2013 NSS/MIC).
Gamma counting probes play an important role in radioguided sentinel lymph node biopsy surgical procedures. The miniaturization of gamma camera components and associated electronics has allowed the introduction of small handheld gamma cameras to be u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19fac3c417dca25373efd5abc0f4dd61
https://doi.org/10.1109/nssmic.2013.6829332
https://doi.org/10.1109/nssmic.2013.6829332
Publikováno v:
2013 IEEE MTT-S International Microwave Symposium Digest (MTT).
This paper reports the first high-power GaN MMIC covering 70 percent of W-band (75-110 GHz). Using an on-chip traveling-wave power combiner circuit, it achieves power levels of greater than 1 W CW over the 80 to 100 GHz band and a peak power of 2 W C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3335e8ad193f0e884c6c175911a611b7
https://doi.org/10.1109/mwsym.2013.6697656
https://doi.org/10.1109/mwsym.2013.6697656
Publikováno v:
2012 IEEE/MTT-S International Microwave Symposium Digest.
This paper reports the first full-band, W-band (75–110 GHz) power amplifier utilizing GaAs MMICs. The MMIC, developed using a commercially available 0.1µm GaAs pHEMT process, demonstrated a small-signal gain of greater than 15 dB with a typical Ps
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1dc5357622d0977de1c78774dcfd9934
https://doi.org/10.1109/mwsym.2012.6259686
https://doi.org/10.1109/mwsym.2012.6259686
Publikováno v:
2010 IEEE MTT-S International Microwave Symposium.
This paper reports a W-band solid-state power amplifier with an output power of 5.2W at 95 GHz and greater than 3 watts over the 94 to 98.5 GHz band. These SOA results were achieved by combining 12 GaN MMICs in a low-loss radial-line combiner network
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc6fc7bdf6e8088bf7023ef95988d1f7
https://doi.org/10.1109/mwsym.2010.5517616
https://doi.org/10.1109/mwsym.2010.5517616