Zobrazeno 1 - 10
of 13
pro vyhledávání: '"James S. Greeneich"'
Autor:
Steve D. Slonaker, Douglas R. Ritchie, Barton A. Katz, James S. Greeneich, Richard Rogoff, Stefan Wittekoek, Martin A. van den Brink, Paul Frank Luehrmann
Publikováno v:
SPIE Proceedings.
Many lithographic approaches to achieving 0.35 micron IC design rules have been proposed. Several years ago, the primary candidate was x-ray lithography. Today it is generally acknowledged that an optical approach will be used for such design rules.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d4a76a02de5c11157fe312e90f1116f
https://doi.org/10.1117/12.130363
https://doi.org/10.1117/12.130363
Publikováno v:
SPIE Proceedings.
High packing density integrated circuits such as 4 MB DRAM require many interconnect layers. The resulting topography can be very challenging at each layer, particularly for patterning contacts. This paper provides practical techniques for imaging su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eacca48b5af8fe2d437a49c4a2318a65
https://doi.org/10.1117/12.47362
https://doi.org/10.1117/12.47362
Autor:
Barton A. Katz, Mark G. Bigelow, Ann Katz, James S. Greeneich, Frits J. van Hout, Jos F. Coolsen
Publikováno v:
Optical/Laser Microlithography III.
I-line stepper technology is described which features a new generation high NA lens and an improved implementation of a phase grating alignment system. Combining the high NA lens with high contrast resist processing enables O.5um processing to be sup
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3394586a56ae5abc950e511e66fd3b5c
https://doi.org/10.1117/12.20183
https://doi.org/10.1117/12.20183
Autor:
James S. Greeneich
Publikováno v:
Journal of The Electrochemical Society. 122:970-976
We report on the solubility characteristics of poly‐(methyl methacrylate) electron‐resist for developer combinations of methyl isobutyl ketone (MIBK) and isopropyl alcohol (IPA). The solubility rate is determined in terms of the fragmented molecu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbee744c698613d9ff790b9038facf1b
https://doi.org/10.1149/1.2134380
https://doi.org/10.1149/1.2134380
Autor:
James S. Greeneich
Publikováno v:
Journal of Applied Physics. 45:5264-5268
The time evolution of exposure contours in poly‐(methyl methacrylate) (PMMA) electron resist is calculated for several time‐dependent developers comprised of various proportions of methyl isobutyl ketone (MIBK) and isopropyl alcohol (IPA). Contou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd2e5e598f7fb7f3f8dc004c5bd5a427
https://doi.org/10.1063/1.1663227
https://doi.org/10.1063/1.1663227
Publikováno v:
Microelectronic Engineering. 9:53-58
Submicron optical lithography is achieved with an advanced 5X I-line wafer stepper. Production design rules to 0.7 microns are achieved by combining very good optical performance with large depth of focus and overlay to better than 0.15 microns. By u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8313dd6bcb5003e0557a2b92293b9870
https://doi.org/10.1016/0167-9317(89)90012-9
https://doi.org/10.1016/0167-9317(89)90012-9
Autor:
James S. Greeneich
Publikováno v:
Applied Physics Letters. 27:579-581
Efficient x‐ray sources whose dominant output is from the x‐ray continuum are examined experimentally for use in x‐ray lithography. At 10 kV with a 6‐μm Mylar mask and 50‐μm Be window, a Au continuum source is more than 3 times as efficie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::996bf5c5c83fbcb31c75c3e5ae37071e
https://doi.org/10.1063/1.88319
https://doi.org/10.1063/1.88319
Publikováno v:
SPIE Proceedings.
I-line lithography offers the capability to achieve half-micron integrated circuit design rules. Such design rules require very good optical performance matched to resist process technology. Overlay performance at these design rules is also critical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b3f9318b839f8e052399a08f5740861
https://doi.org/10.1117/12.953147
https://doi.org/10.1117/12.953147
Publikováno v:
SPIE Proceedings.
Advanced wafer steppers must be capable of meeting production requirements for devices with 0.5 μm design rules. Such devices require a very good optical performance matched to advanced resist processing techniques. Overlay performance at this resol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4347a569f898d97314cc09b28f6a70d1
https://doi.org/10.1117/12.961740
https://doi.org/10.1117/12.961740
