Zobrazeno 1 - 10
of 14
pro vyhledávání: '"James S. Flores"'
Autor:
James S. Flores
Publikováno v:
SPIE Proceedings.
Space instrument programs occasionally need an estimate of how dark current distribution of a silicon CCD changes versus proton radiation exposure and temperature. The task that is the subject of this article was started by adopting a relevant gamma
Autor:
Pooran Chandra Joshi, James S. Flores, Steven R. Droes, Mark A. Crowder, John W. Hartzell, Masao Moriguchi, Apostolos T. Voutsas
Publikováno v:
SPIE Proceedings.
We report on the fabrication and characterization of SiO 2 thin films by high-density plasma enhanced chemical vapor deposition (HD-PECVD) technique at a processing temperature lower than 400°C for gate dielectric applications in thin film transisto
Autor:
James S. Flores
Publikováno v:
Flat Panel Display Technology and Display Metrology II.
Incorporating low temperature poly-Si (LTPS) technology as an active matrix (AM) in flat panel displays (FPDs) has been a struggle and remains costly. The situation motivates companies to investigate alternative AM technologies. Some projects try to
Autor:
James S. Flores
Publikováno v:
SPIE Proceedings.
Radiation promotes charge transfer inefficiency (CTI) in a CCD, causing focused images to become smeared. For example, such smearing will degrade the accuracy and precision of a CCD-based pointing system. A model has been created whereby CTI smearing
Autor:
James S. Flores
Publikováno v:
SPIE Proceedings.
A thinned CCD QE model derived by Morley Blouke provided more than an estimation of quantum efficiency. The derivation of the model also produced charge flux equations in the direction normal to the imaging surface. First, these equations were conver
Autor:
M. Serra, Morley M. Blouke, T. M. Duncan, R. Reed, Michael D. Nelson, Brian G. Higgins, Gary L. Womack, W. Alan Delamere, Andre Knoesen, James S. Flores
Publikováno v:
SPIE Proceedings.
This paper discusses the development of two materials as AR coatings for thinned backilluminated charge-coupled devices. The first material is the heavy metal oxide Ta205 deposited as a spin on layer using sol-gel technology. The second material is S
Publikováno v:
SPIE Proceedings.
The development of the 20482 CCD for a second generation Space Telescope instrument has resulted devices with very few defects dark currents of less than 12 electrons/pixel/hour at 80 readout noise levels of less than 4 electrons rms and excellent ch
Autor:
James S. Flores
Publikováno v:
SPIE Proceedings.
An analytical depletion-mode MOSFET (DMFET) and gate-to-channel capacitance (Cgc) models were derived from the potential and charge distribution model created by Van der Tol and Chamberlain [1]. The DMFET model predicts ''ds from the four terminal vo
Autor:
James W. Baer, M. P. McCormick, Alan W. Delamere, James S. Flores, Morley M. Blouke, Thomas H. Ebben, Gary Kleiman
Publikováno v:
SPIE Proceedings.
A third-generation SAGE instrument is about to be designed as part of the NASA Earth Observational System. Previous instruments have used individual diodes as detectors. The new instrument will use a custom design CCD to dramatically enhance the stud
Autor:
Alan W. Delamere, James W. Baer, Thomas H. Ebben, James S. Flores, Gary Kleiman, Morley M. Blouke, Michael P. McCormick
Publikováno v:
SPIE Proceedings.