Zobrazeno 1 - 10
of 64
pro vyhledávání: '"James Richmond"'
Publikováno v:
Materials Science Forum. :895-900
The development of 4H-SiC PiN diodes capable of blocking to greater than 10 kV while having current ratings of 20 A at 100 A/cm2 is continuing in earnest. VF instability of these diodes continues to be a roadblock, but progress is being made, and a 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70fa6b2c08c91506335f6ac5630d0dd4
https://doi.org/10.4028/www.scientific.net/msf.556-557.895
https://doi.org/10.4028/www.scientific.net/msf.556-557.895
Autor:
Mrinal K. Das, Joseph John Sumakeris, Bradley Heath, Brett Hull, James Richmond, Charles Scozzie, Bruce Geil
Publikováno v:
Materials Science Forum. :1355-1358
Forward voltage (VF) drift, in which a 4H-SiC PiN diode suffers from an irreversible increase in VF under forward current flow, continues to inhibit commercialization of 4H-SiC PiN diodes. We present our latest efforts at fabricating high blocking vo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7a707f94f56ec72ef14af90746c8dfd
https://doi.org/10.4028/www.scientific.net/msf.527-529.1355
https://doi.org/10.4028/www.scientific.net/msf.527-529.1355
Publikováno v:
Materials Science Forum. :1329-1334
The PiN diode is an attractive device to exploit the high power material advantages of 4H-SiC. The combination of high critical field and adequate minority carrier lifetime has enabled devices that block up to 20 kV and carry 25 A. Furthermore, these
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca6b08a60f7b9240847a8f2b67efdf3f
https://doi.org/10.4028/www.scientific.net/msf.527-529.1329
https://doi.org/10.4028/www.scientific.net/msf.527-529.1329
Autor:
Anant K. Agarwal, John W. Palmour, Sei Hyung Ryu, Sumi Krishnaswami, Dimos Katsis, James Richmond, Charles Scozzie, Bruce Geil
Publikováno v:
Materials Science Forum. :1445-1448
This paper reports on a 400 watt boost converter using a SiC BJT and a SiC MOSFET as the switch and a 6 Amp and a 50 Amp SiC Schottky diode as the output rectifier. The converter was operated at 100 kHz with an input voltage of 200 volts DC and an ou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da6adf2038fb3fb7846d1442ebc5beef
https://doi.org/10.4028/www.scientific.net/msf.527-529.1445
https://doi.org/10.4028/www.scientific.net/msf.527-529.1445
Autor:
James Richmond, Sumi Krishnaswami, Craig Capell, Dimos Katsis, John W. Palmour, Sei Hyung Ryu, Robert E. Stahlbush, Anant K. Agarwal, Charles Scozzie, Bruce Geil
Publikováno v:
Materials Science Forum. :1409-1412
SiC BJTs show instability in the I-V characteristics after as little as 15 minutes of operation. The current gain reduces, the on-resistance in saturation increases, and the slope of the output characteristics in the active region increases. This deg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d35f847ce305a061d4d8a8735b863e8
https://doi.org/10.4028/www.scientific.net/msf.527-529.1409
https://doi.org/10.4028/www.scientific.net/msf.527-529.1409
Autor:
Craig Capell, James Richmond, John W. Palmour, Sei-Hyung Ryu, Anant K. Agarwal, Ben Damsky, Sumi Krishnaswami
Publikováno v:
Materials Science Forum. :1397-1400
We report on the development of the first 1 cm x 1 cm SiC Thyristor chip capable of blocking 5 kV. This demonstrates the present quality of the SiC substrate and epitaxial material. A forward drop of 4.1 V at 100 A and 25°C has been measured. The tu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3029a13df5ef06cb0e5db7fc9c0498d
https://doi.org/10.4028/www.scientific.net/msf.527-529.1397
https://doi.org/10.4028/www.scientific.net/msf.527-529.1397
Autor:
Mrinal K. Das, James Richmond, Joseph John Sumakeris, Brett Hull, Adrian Powell, Sumi Krishnaswami
Publikováno v:
Materials Science Forum. :965-968
The path to commericializing a 4H-SiC power PiN diode has faced many difficult challenges. In this work, we report a 50 A, 10 kV 4H-SiC PiN diode technology where good crystalline quality and high carrier lifetime of the material has enabled a high y
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37d21e09a9635dfa972d5f81d10e77cc
https://doi.org/10.4028/www.scientific.net/msf.483-485.965
https://doi.org/10.4028/www.scientific.net/msf.483-485.965
Autor:
James Richmond
Publikováno v:
International Journal of Information Technology and Decision Making. (03):395-410
Statistical properties of DEA methods for efficiency estimation are poorly understood and currently the best way forward must be to use bootstrap techniques. The article seeks to extend bootstrap methods to allow investigation of the properties of es
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0364e145ad7898a37ad4d693c84da868
http://www.worldscinet.com/cgi-bin/details.cgi?type=pdf&id=pii:S0219622005001623
http://www.worldscinet.com/cgi-bin/details.cgi?type=pdf&id=pii:S0219622005001623
Publikováno v:
International Journal of High Speed Electronics and Systems. 14:860-864
The path to commercializing a 4H - SiC power PiN diode has faced many difficult challenges. In this work, we report a 50 A, 10 kV 4H - SiC PiN diode technology where good crystalline quality and high carrier lifetime of the material has enabled a hig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1535012e1b40c4944317f08ff9bf8054
https://doi.org/10.1142/s0129156404002958
https://doi.org/10.1142/s0129156404002958
Autor:
John W. Palmour, James Richmond, Anant K. Agarwal, James Scofield, Mrinal K. Das, Sei-Hyung Ryu, Sumi Krishnaswami
Publikováno v:
International Journal of High Speed Electronics and Systems. 14:879-883
Due to the high critical field in 4 H - SiC , the drain charge and switching loss densities in a SiC power device are approximately 10X higher than that of a silicon device. However, for the same voltage and resistance ratings, the device area is muc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3388bb50e4ba3d26851d5c4d09262be
https://doi.org/10.1142/s0129156404002983
https://doi.org/10.1142/s0129156404002983