Zobrazeno 1 - 10
of 37
pro vyhledávání: '"James R. Waterman"'
Autor:
R. A. Coussa, J. E. Jensen, K. Kosai, Edward P. Smith, Gregory K. Pierce, T. J. de Lyon, A. M. Gallagher, James R. Waterman, John A. Roth, L. T. Pham, G. M. Venzor, Brett Z. Nosho
Publikováno v:
Journal of Electronic Materials. 33:517-525
For small pixel, infrared (IR) focal plane arrays (FPAs), Raytheon Vision Systems’ architecture for integrated, dual-band detectors uses the sequential mode of the n-p+-n configuration. There is a single indium bump per pixel, leaving the p+ layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05cb28451df493ed3ceca597367aa1a3
https://doi.org/10.1007/s11664-004-0040-y
https://doi.org/10.1007/s11664-004-0040-y
Publikováno v:
Superlattices and Microstructures. 21:95-99
Far infrared magneto-optical measurements have been performed on a series of InAs single quantum wells (11–30 nm) clad with thick GaSb layers where either GaAs-like or InSb-like bonds are formed at the heterointerfaces. The rich absorption spectra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7837538f1cc35f21c05875ab8edebd5
https://doi.org/10.1006/spmi.1996.0176
https://doi.org/10.1006/spmi.1996.0176
Autor:
Brian R. Bennett, B. V. Shanabrook, Mark E. Twigg, J. L. Davis, R. J. Wagner, James R. Waterman
Publikováno v:
Solid-State Electronics. 37:733-737
The GaSb/InAs materials system, with two species of both cations and anions, permits the construction of heterostructures with either InSb- or GaAs-like interfaces. As a result, this system provides an opportunity to explore the limits of interfacial
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::834ed56dc51ff5f32bbc668c03f30f3d
https://doi.org/10.1016/0038-1101(94)90288-7
https://doi.org/10.1016/0038-1101(94)90288-7
Autor:
B. V. Shanabrook, R. J. Wagner, James R. Waterman, P. J. Lin-Chung, W. J. Moore, M. J. Yang, J. L. Davis
Publikováno v:
Surface Science. 305:271-274
We report the observation of spin-resolved cyclotron resonance of a 2DEG in an InAs quantum well. The data show that the g -factor of a 2DEG has a smaller energy dependence than that of bulk electrons. The reduction of the spin-splitting in a 2DEG ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e58537f81bfe8a5965bf849f9b15da90
https://doi.org/10.1016/0039-6028(94)90899-0
https://doi.org/10.1016/0039-6028(94)90899-0
Publikováno v:
SPIE Proceedings.
This paper presents a simple, fast, and robust method to estimate the blur kernel model, support size, and its parameters directly from a blurry image. The edge profile method eliminates the need for searching the parameter space. In addition, this e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d4b3c3c50b76cdab11748133a3441c6
https://doi.org/10.1117/12.888126
https://doi.org/10.1117/12.888126
Publikováno v:
Physical Review B. 47:6807-6810
We report the observation of the spin-doublet splitting of cyclotron resonance (CR) in a two-dimensional electron gas (2DEG). Two discernible CR peaks, originating from spin-conserved transitions between adjacent sets of spin-split Landau states, are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::234fb2c41899ba8a64106f8a24e1246e
https://doi.org/10.1103/physrevb.47.6807
https://doi.org/10.1103/physrevb.47.6807
Publikováno v:
Physical Review B. 47:1691-1694
The spin-resolved cyclotron resonance of a two-dimensional electron gas in an InAs quantum well sandwiched by AlSb barriers has been investigated to determine the energy dependence of the effective mass. We observe variations of the cyclotron mass co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::54ae30701fe347c4983058bac7e23b4b
https://doi.org/10.1103/physrevb.47.1691
https://doi.org/10.1103/physrevb.47.1691
Publikováno v:
Semiconductor Science and Technology. 8:S129-S132
The authors have studied the cyclotron resonance (CR) of 2D electrons in strained InAs single quantum wells, which are grown on either a GaSb or an AlSb buffer layer in order to vary the degree of strain in InAs. For samples with a GaSb buffer layer,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::526c118cf79305bec8182d5cdb3d1269
https://doi.org/10.1088/0268-1242/8/1s/029
https://doi.org/10.1088/0268-1242/8/1s/029
Publikováno v:
Semiconductor Science and Technology. 8:S106-S111
The effect of interface bond configuration on the structural and optical properties of short-period ( approximately=50 AA) GaSb/InAs superlattices has been examined. Structures consisting of eight monolayers of GaSb and seven monolayers of InAs with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8747ab95b78702ca0cf8f6d92bc98fd0
https://doi.org/10.1088/0268-1242/8/1s/024
https://doi.org/10.1088/0268-1242/8/1s/024
Publikováno v:
SPIE Proceedings.
We present image data and discuss naval sensing applications of SWIR and Hyperspectral SWIR imaging in littoral and marine environments under various light conditions. These environments prove to be challenging for persistent surveillance application
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49b3d5f71667c0ce693d890979151a3b
https://doi.org/10.1117/12.850262
https://doi.org/10.1117/12.850262