Zobrazeno 1 - 10
of 95
pro vyhledávání: '"James R. Engstrom"'
Publikováno v:
Chemistry of Materials. 32:6035-6042
Low-temperature, plasma-free atomic layer etching (ALE) of Pd0 is explored. A vacuum ultraviolet (VUV) light source (115 < λ < 400 nm) is used in conjunction with a controlled O2 gas exposure to pr...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b422114af19c61406950d64723380c6c
https://doi.org/10.1021/acs.chemmater.0c01379
https://doi.org/10.1021/acs.chemmater.0c01379
Publikováno v:
ACS applied materialsinterfaces. 12(45)
Density functional theory (DFT) is used to better understand the oxidation of Pd metal using vacuum ultraviolet (VUV) light co-exposed with O2, which is known to produce O and O3. The oxidation of Pd metal arising from O, O2, and O3 is assessed on ba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b146d368388ec3445e31845b3b96fff3
https://pubmed.ncbi.nlm.nih.gov/33119248
https://pubmed.ncbi.nlm.nih.gov/33119248
Autor:
Pengyuan Zhao, Jonathan Wong, Ka Un Lao, Yan Yang, Hsin-Yu Ko, Robert A. DiStasio, Taewon Suh, James R. Engstrom
Publikováno v:
ACS applied materialsinterfaces. 12(8)
In this work, we have explored the use of a third species during chemical vapor deposition (CVD) to direct thin-film growth to occur exclusively on one surface in the presence of another. Using a combination of density functional theory (DFT) calcula
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::299ec4d4c4c844c8791993483c186819
https://pubmed.ncbi.nlm.nih.gov/32043857
https://pubmed.ncbi.nlm.nih.gov/32043857
Publikováno v:
Journal of Vacuum Science & Technology A. 40:012201
We have examined the nucleation and growth of WSe2 thin films in ultrahigh vacuum on highly oriented pyrolytic graphite (HOPG) using in situ real-time x-ray fluorescence (XRF), and ex situ x-ray diffraction, x-ray photoelectron spectroscopy, scanning
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54953020a9bd9b1294c9f07c5ae39b02
https://doi.org/10.1116/6.0001407
https://doi.org/10.1116/6.0001407
Publikováno v:
The Journal of Physical Chemistry C. 121:8464-8472
We have examined the effect of growth rate on the growth mode of thin films of tetracene on SiO2 at a substrate temperature of 0 °C. For a preponderance of conditions examined here, only the thin-film phase is formed. From a combination of in situ r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87ed468571075d14ec01b8c6719c7570
https://doi.org/10.1021/acs.jpcc.7b01369
https://doi.org/10.1021/acs.jpcc.7b01369
Autor:
Rambert K. Nahm, James R. Engstrom
Publikováno v:
The Journal of Physical Chemistry C. 120:7183-7191
We have examined the growth of thin films of tetracene on SiO2 using in situ real time X-ray synchrotron radiation and ex situ atomic force microscopy. Using in situ X-ray reflectivity, we observe a transition from 3D island growth to 2D layer-by-lay
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ea1b1b90e0f038ba3ed4391f71a7c7c
https://doi.org/10.1021/acs.jpcc.6b00963
https://doi.org/10.1021/acs.jpcc.6b00963
Publikováno v:
The Journal of Physical Chemistry C. 120:6165-6179
We have examined the growth of bilayers and superlattices of pentacene and perylene derivatives (PTCDI-Cn) using in situ real time X-ray synchrotron radiation techniques and ex situ atomic force microscopy. We find that the growth of PTCDI-Cn layers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ce927ac0e69e37fba4acef4ec889674
https://doi.org/10.1021/acs.jpcc.6b01717
https://doi.org/10.1021/acs.jpcc.6b01717
Publikováno v:
The Journal of Physical Chemistry Letters. 7:642-646
Surface states of colloidal nanocrystals are typically created when organic surfactants are removed. We report a chemical process that reduces surface traps and tunes the interparticle coupling in PbS nanocrystal thin films after the surfactant ligan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::143ea97a17ca41aa6b5208b5e5031ff5
https://doi.org/10.1021/acs.jpclett.5b02813
https://doi.org/10.1021/acs.jpclett.5b02813
Publikováno v:
Journal of Vacuum Science & Technology A. 38:062411
In this work, we investigate the atomic layer deposition (ALD) of ZrO2 thin films on Cu and SiO2 substrates, using Zr[N(C2H5CH3)]4 as the thin-film precursor, and H2O or O2 as the coreactants. Here, we introduce 3-hexyne as a coadsorbate molecule dur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d230f48d42b3113921ea4720bfb0c753
https://doi.org/10.1116/6.0000497
https://doi.org/10.1116/6.0000497
Publikováno v:
The Journal of Physical Chemistry C. 116:21948-21960
We have examined the initial stages of atomic layer deposition (ALD) of TaNx on SiO2, a porous low-κ SiO2-based material, and both of these substrates modified by a branched interfacial organic layer, using in situ X-ray photoelectron spectroscopy (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64dd567a9300754dc27f9cec00f83b3f
https://doi.org/10.1021/jp3086232
https://doi.org/10.1021/jp3086232