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pro vyhledávání: '"James P. Custer Jr."'
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 1, Pp n/a-n/a (2024)
Abstract Geometric diodes (GDs) represent a relatively unconventional class of diode that produces an asymmetric current response through carrier transport in an asymmetric geometry. Synthesized from the bottom up, Si nanowire‐based GDs are three
Externí odkaz:
https://doaj.org/article/1cc683ffeb224f93baccebc3d930120c