Zobrazeno 1 - 2
of 2
pro vyhledávání: '"James Nakos"'
Autor:
James Kolodzey, Ramsey Hazbun, James Nakos, Dean Siegel, John Hart, D. L. Harame, Christopher J. Funch
Publikováno v:
ECS Transactions. 64:659-667
The Ge content in SiGe bipolar transistors (HBTs) has been steadily increasing for the past few decades in order to meet higher frequency targets. Problems exist with higher Ge content films due to the strain from the pseudomorphic growth on Si subst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bf20747e05ed1722621cf02a7e2d5c42
https://doi.org/10.1149/06406.0659ecst
https://doi.org/10.1149/06406.0659ecst
Autor:
V. Kaushal, James Nakos, Dean Siegel, James Kolodzey, Ramsey Hazbun, Christopher J. Funch, John Hart, David Scott Hazel
Publikováno v:
ECS Meeting Abstracts. :1805-1805
Si and SiGe epitaxy via UHVCVD requires an extremely clean and oxide free substrate but has the advantage of allowing low temperature epitaxy (LTE). In-situ bake-off of thin native oxides is possible at high temperatures, but is not an option for low
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::44e19799262a6fc4648f50a3dde6eda6
https://doi.org/10.1149/ma2014-02/35/1805
https://doi.org/10.1149/ma2014-02/35/1805