Zobrazeno 1 - 10
of 13
pro vyhledávání: '"James M. Zahler"'
Autor:
Qi Xu, Brian C. Riggs, Richard Biedenharn, Vince Romanin, Daniel S. Codd, Yaping Vera Ji, James M. Zahler, Christopher Dougher, Matthew D. Escarra
Publikováno v:
Applied Energy. 208:1370-1378
Process heat applications make up a large potential market for renewable energy. Concentrated solar thermal (CST) systems are capable of reaching temperatures necessary for a wide variety of industrial and commercial applications but are often overlo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b85980ae8c9f1d4822bafc403cc42fc
https://doi.org/10.1016/j.apenergy.2017.09.018
https://doi.org/10.1016/j.apenergy.2017.09.018
Autor:
Richard E. Biedenham, Yaping Vera Ji, Matthew D. Escarra, Qi Xu, Daniel S. Codd, James M. Zahler, Vince Romanin, Chris Dougher, Brian C. Riggs
Publikováno v:
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC).
Concentrator photovoltaic (CPV) systems have been unable to keep up with the plummeting cost of flat plate PV for large scale power generation. New markets must be explored in order to maintain a robust CPV industry. Solar thermal offers a large pote
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::055ba27970da6192481028f6eddc9735
https://doi.org/10.1109/pvsc.2017.8366018
https://doi.org/10.1109/pvsc.2017.8366018
Autor:
Yiseul Park, Corinne Ladous, Michael A. Banas, Daniel D. Koleske, Tom Pinnington, James M. Zahler, Gerald Thaler, Harry A. Atwater, Michael J. Russell, Sean Olson, Mary H. Crawford
Publikováno v:
Journal of Crystal Growth. 310:2514-2519
We report growth of InGaN/GaN multi-quantum well (MQW) and LED structures on a novel composite substrate designed to eliminate the coefficient of thermal expansion (CTE) mismatch problems which impact GaN growth on bulk sapphire. To form the composit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49c26950b3b75b088e2bac1cd22e1155
https://doi.org/10.1016/j.jcrysgro.2008.01.022
https://doi.org/10.1016/j.jcrysgro.2008.01.022
Publikováno v:
Thin Solid Films. :558-562
We have successfully used hydrophobic direct wafer bonding along with hydrogen-induced layer splitting of germanium to transfer 700 nm thick, single-crystal germanium (100) films to silicon (100) substrates without using a metallic bonding layer. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::47e178a5519c56aa9f72f4e7da8eb03e
https://doi.org/10.1016/s0040-6090(01)01570-x
https://doi.org/10.1016/s0040-6090(01)01570-x
Publikováno v:
Applied Physics Letters. 83:5413-5415
Applications of InP-based materials are numerous, and thus integration of InP on Si may enable realization of powerful integrated III‐V-on-Si systems. InP and its lattice matched quaternary counterpart In12xGaxAsyP12y are direct gap semiconductors,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b30194b94d5804c7790a6e8edffa0d18
https://doi.org/10.1063/1.1637429
https://doi.org/10.1063/1.1637429
Autor:
John H. Wohlgemuth, Roger F. Clark, Jean P. Posbic, James M. Zahler, Mark Gleaton, David E. Carlson, Daniel W. Cunningham
Publikováno v:
2009 34th IEEE Photovoltaic Specialists Conference (PVSC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79659495cdf23b1eaade5ac875083b5d
https://doi.org/10.1109/pvsc.2009.5411280
https://doi.org/10.1109/pvsc.2009.5411280
Autor:
James M. Zahler, Harry A. Atwater, Tom Pinnington, Katsuaki Tanabe, Corinne Ladous, Frederick D. Newman
Publikováno v:
SPIE Proceedings.
InP/Si engineered substrates formed by wafer bonding and layer transfer have the potential to significantly reduce the cost and weight of III-V compound semiconductor solar cells. InP/Si substrates were prepared by He implantation of InP prior to bon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::070c5b4ad3b2c35111ed250b106387b8
https://doi.org/10.1117/12.734801
https://doi.org/10.1117/12.734801
Autor:
Harry A. Atwater, Frederick D. Newman, Katsuaki Tanabe, Tom Pinnington, James M. Zahler, Corinne Ladous
InP/Si substrates were fabricated through wafer bonding and helium-induced exfoliation of InP, and InGaAs solar cells lattice matched to bulk InP were grown on these substrates using metal-organic chemical-vapor deposition. The photovoltaic character
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c13ed39b6d7cb00c837abeda54523321
https://resolver.caltech.edu/CaltechAUTHORS:ZAHapl07
https://resolver.caltech.edu/CaltechAUTHORS:ZAHapl07
The role of hydrogen in the exfoliation of Ge is studied using cross-sectional transmission electron microscopy, atomic force microscopy, and multiple-internal transmission mode Fourier-transform infrared absorption spectroscopy and compared with the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fcc0d2a1bf38eb500d04edfcda01f3b4
https://resolver.caltech.edu/CaltechAUTHORS:ZAHprb07a
https://resolver.caltech.edu/CaltechAUTHORS:ZAHprb07a
Autor:
James M. Zahler, Katsuaki Tanabe, Tom Pinnington, Corinne Ladous, Frederick D. Newman, Harry A. Atwater
Publikováno v:
MRS Proceedings. 1012
InP/Si engineered substrates formed by wafer bonding and layer transfer have the potential to significantly reduce the cost and weight of III-V compound semiconductor solar cells. InP/Si substrates were prepared by He implantation of InP prior to bon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc3b9093c565eb7549286700cb40440b
https://doi.org/10.1557/proc-1012-y01-09
https://doi.org/10.1557/proc-1012-y01-09