Zobrazeno 1 - 10
of 55
pro vyhledávání: '"James M. Burst"'
Autor:
James M. Burst, Stuart B. Farrell, David S. Albin, Eric Colegrove, Matthew O. Reese, Joel N. Duenow, Darius Kuciauskas, Wyatt K. Metzger
Publikováno v:
APL Materials, Vol 4, Iss 11, Pp 116102-116102-6 (2016)
CdTe defect chemistry is adjusted by annealing samples with excess Cd or Te vapor with and without extrinsic dopants. We observe that Group I (Cu and Na) elements can increase hole density above 1016 cm−3, but compromise lifetime and stability. By
Externí odkaz:
https://doaj.org/article/49d2fe7d43db4df8824d711668f7f1ee
Autor:
Mahisha Amarasinghe, Wyatt K. Metzger, Eric Colegrove, James M. Burst, David S. Albin, Helio R. Moutinho
Publikováno v:
Scientific Reports
Scientific Reports, Vol 10, Iss 1, Pp 1-8 (2020)
Scientific Reports, Vol 10, Iss 1, Pp 1-8 (2020)
A general problem for semiconductor applications is that very slow deposition on expensive single-crystal substrates yields high crystalline quality with excellent electro-optical properties, but at prohibitive costs and throughput for many applicati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5ab3e206f24d3e5ae228fbea5ae10440
https://doi.org/10.1038/s41598-020-59083-3
https://doi.org/10.1038/s41598-020-59083-3
Autor:
Lorelle M. Mansfield, Stephen Glynn, James M. Burst, Karen Bowers, Ingrid Repins, Carolyn Beall
Publikováno v:
Thin Solid Films. 655:70-76
Window and buffer layers in chalcopyrite devices are well known to affect junctions, conduction, and photo-absorption properties of the device. Some of these layers, particularly “buffers,” which are deposited directly on top of the absorber, exh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::530dbadcaa87562c6d59bf1465d7bcee
https://doi.org/10.1016/j.tsf.2018.01.040
https://doi.org/10.1016/j.tsf.2018.01.040
Autor:
Eric Colegrove, James M. Burst, Su-Huai Wei, Wyatt K. Metzger, Steven P. Harvey, Jihui Yang, Joel N. Duenow, David S. Albin
Publikováno v:
IEEE Journal of Photovoltaics. 7:870-873
Group V dopants may be used for next-generation high-voltage cadmium telluride (CdTe) solar photovoltaics, but fundamental defect energetics and kinetics need to be understood. Here, antimony (Sb) diffusion is studied in single-crystal and polycrysta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d952a38bdea260e179b28ff7f2590f18
https://doi.org/10.1109/jphotov.2017.2655033
https://doi.org/10.1109/jphotov.2017.2655033
Autor:
Matthew O. Reese, D. M. Meysing, Colin A. Wolden, James M. Burst, Mark C. Lonergan, Charles W. Warren, Hasitha Mahabaduge, Teresa M. Barnes, Wyatt K. Metzger, Ali Abbas, John M. Walls
Publikováno v:
Solar Energy Materials and Solar Cells. 157:276-285
Oxygenated cadmium sulfide (CdS:O) produced by reactive sputtering has emerged as a promising alternative to conventional CdS for use as the n- type window layer in CdTe solar cells. Here, complementary techniques are used to expose the window layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ffe2021b0db078d4327c13370c0a7389
https://doi.org/10.1016/j.solmat.2016.05.038
https://doi.org/10.1016/j.solmat.2016.05.038
Autor:
Teresa M. Barnes, Joel N. Duenow, Darius Kuciauskas, Mowafak Al-Jassim, David S. Albin, Helio R. Moutinho, Jeffrey A. Aguiar, Santosh K. Swain, Tursun Ablekim, Kelvin G. Lynn, Matthew O. Reese, Eric Colegrove, Chun-Sheng Jiang, Wyatt K. Metzger, James M. Burst, Ana Kanevce
Publikováno v:
IEEE Journal of Photovoltaics. 6:1650-1653
Advancing CdTe solar cell efficiency requires improving the open-circuit voltage $\rm{(V_{{\rm{OC}}})}$ above 900 mV. This requires long carrier lifetime, high hole density, and high-quality interfaces, where the interface recombination velocity is l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::082c638b8354ff126880fef32a387995
https://doi.org/10.1109/jphotov.2016.2598274
https://doi.org/10.1109/jphotov.2016.2598274
Autor:
Eric Colegrove, Steve Harvey, Su-Huai Wei, Jihui Yang, James M. Burst, Wyatt K. Metzger, David S. Albin, Joel N. Duenow
Publikováno v:
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e07b97014a72ae6c70ae493a0a1ae04
https://doi.org/10.1109/pvsc.2017.8366436
https://doi.org/10.1109/pvsc.2017.8366436
Autor:
Darius Kuciauskas, Wyatt K. Metzger, Eric Colegrove, James M. Burst, Mowafak Al-Jassim, Ana Kanevce, Matthew O. Reese, Joel N. Duenow, Chun-Sheng Jiang, D. S. Albin, Tursunjan Ablekim, Santosh K. Swain, Helio R. Moutinho, Jeffrey A. Aguiar, Kelvin G. Lynn
Publikováno v:
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80839ac607e22bb74b51256a929f0e6b
https://doi.org/10.1109/pvsc.2017.8366834
https://doi.org/10.1109/pvsc.2017.8366834
Autor:
Su-Huai Wei, Tursun Ablekim, Santosh K. Swain, Darius Kuciauskas, Katherine Zaunbrecher, Wan-Jian Yin, Teresa M. Barnes, James M. Burst, Kelvin G. Lynn
Publikováno v:
Scientific Reports
Scientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
Scientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
Efficient p-type doping in CdTe has remained a critical challenge for decades, limiting the performance of CdTe-based semiconductor devices. Arsenic is a promising p-type dopant; however, reproducible doping with high concentration is difficult and c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7d0933a7ba89c4fd533986bcf0ee9dcc
https://pubmed.ncbi.nlm.nih.gov/28676701
https://pubmed.ncbi.nlm.nih.gov/28676701
Autor:
Su-Huai Wei, Jie Ma, Darius Kuciauskas, Ramesh Dhere, D. S. Albin, W. L. Rance, Teresa M. Barnes, Timothy A. Gessert, Matthew O. Reese, Helio R. Moutinho, James M. Burst, Ana Kanevce, Joel N. Duenow
Publikováno v:
Solar Energy Materials and Solar Cells. 119:149-155
Recent studies of thin-film CdS/CdTe photovoltaic (PV) devices have suggested that a significantly higher device performance will not be achieved unless recombination in the CdTe is reduced. Although some control of CdTe recombination has been achiev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c439dec557f26e02e7b0a4e9db2a855b
https://doi.org/10.1016/j.solmat.2013.05.055
https://doi.org/10.1016/j.solmat.2013.05.055