Zobrazeno 1 - 10 of 62 pro vyhledávání: '"James M. Blackwell"'
1
Understanding the effect of direct-acting antiviral therapy on weight in patients with chronic hepatitis C
Autor: Chinyere L Nkwocha, Pamela S Carter, Somer Blair, James M Blackwell, Esther O Fasanmi
Publikováno v: Antiviral therapy. 27(6)
Background Direct-acting antivirals (DAAs) have revolutionized treatment for HCV. Compared to interferon-based therapies, DAAs achieve higher rates of sustained virologic response, with more tolerable side effects. Nonetheless, interferon-based thera
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5618e2d75978b38ef3e578c8cd75a9b9
https://pubmed.ncbi.nlm.nih.gov/36495070
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7
Experimental characterization of model resist materials
Autor: James M. Blackwell, Jonathan Ma, Terry R. McAfee, Oleg Kostko, Patrick P. Naulleau
Publikováno v: International Conference on Extreme Ultraviolet Lithography 2021.
New resists are needed to advance EUV lithography. Tailored design of efficient photoresist is impossible without fundamental understanding of EUV induced chemistry. The absorption of an EUV photon by a thin film resist leads to emission of primary a
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::51df662adf3a95d3c10beee19fc0665c
https://doi.org/10.1117/12.2600890
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8
A Selectively Colorful yet Chilly Perspective on the Highs and Lows of Dielectric Materials for CMOS Nanoelectronics
Autor: Matthew V. Metz, James S. Clarke, Mauro J. Kobrinsky, J. Bielefeld, Ramanan V. Chebiam, Marius K. Orlowski, Sean W. King, Carl H. Naylor, S. Vyas, John J. Plombon, R. Thapa, Vamseedhara Vemuri, James M. Blackwell, Ye Fan, David J. Michalak, Florian Gstrein, Nicholas C. Strandwitz, Michelle M. Paquette
Publikováno v: 2020 IEEE International Electron Devices Meeting (IEDM).
The remarkable advancement of CMOS electronics over the past two decades has been greatly aided by innovations allowing dielectric scaling across both ends of the permittivity spectrum. This paper describes how new dielectric innovations beyond permi
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::27238ad25a90f959569d7043165c8afd
https://doi.org/10.1109/iedm13553.2020.9371942
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9
Modeling photon, electron, and chemical interactions in a model hafnium oxide nanocluster EUV photoresist
Autor: James M. Blackwell, Patrick Theofanis, Florian Gstrein, Marie Krysak
Publikováno v: Extreme Ultraviolet (EUV) Lithography XI.
Despite years of research and development, the fundamental processes of photoionization, secondary electron generation, recombination, diffusion, and resist switching are poorly understood at the atomic level for EUVL. Multiscale modeling of these ph
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fabfd34328ad80c36f6244fdfc655671
https://doi.org/10.1117/12.2552837
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10
Porosity scaling strategies for low-kfilms
Autor: Lauren E. Kreno, David J. Michalak, Arkaprabha Sengupta, James M. Blackwell, James S. Clarke, Jessica M. Torres, Daniel Pantuso
Publikováno v: Journal of Materials Research. 30:3363-3385
Reducing the delay of backend interconnects is critical in delivering improved performance in next generation computer chips. One option is to implement interlayer dielectric (ILD) materials with increasingly lower dielectric constant (k) values. Des
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a4387ff9db71d82602fe08e84fbe82be
https://doi.org/10.1557/jmr.2015.313
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