Zobrazeno 1 - 10
of 12
pro vyhledávání: '"James Karp"'
Autor:
Phoumra Tan, Marko Simicic, Yoojin Ban, Artemisia Tsiara, Peter De Heyn, Xin Wu, Michael J. Hart, Joris Van Campenhout, Kristof Croes, James Karp, Dimitri Linten, Shih-Hung Chen, Jonathan Chang, Dean Tsaggaris
Publikováno v:
2021 43rd Annual EOS/ESD Symposium (EOS/ESD).
ESD robustness for self-protected advanced Silicon photonic components integrated into optical interposers is reported, including industry-first CDM data. HBM performance in reverse bias polarity is shown to be the limiting factor and is correlated t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::700dafe29d5a7a75f104396cdacd3f84
https://doi.org/10.23919/eos/esd52038.2021.9574767
https://doi.org/10.23919/eos/esd52038.2021.9574767
Publikováno v:
IEEE Transactions on Nuclear Science. 65:217-222
Increased sensitivity of FinFET technology to single-event latch-up (SEL) was found during 64-MeV proton beam accelerated testing and confirmed with neutron beam experiments. TCAD simulations demonstrate that the $3\times $ shallower trench isolation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d75f6c4ccd31cd49b5f474ae590b8d7b
https://doi.org/10.1109/tns.2017.2779831
https://doi.org/10.1109/tns.2017.2779831
Publikováno v:
ISQED
The proposed verification methodology enables designers to meet a maximum resistance specification for the well taps routing. Key strengths of the flow are: automatic identification of both well taps and VDD/VSS grid; comparison of the extracted resi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7bc9a218f6fa161fad0af1e41f745b3d
https://doi.org/10.1109/isqed.2018.8357297
https://doi.org/10.1109/isqed.2018.8357297
Autor:
Anda Mocuta, James Karp, Shih-Hung Chen, Mirko Scholz, Guido Groeseneken, D. Linten, Naoto Horiguchi, Ming-Dou Ker, Roman Boschke, M. Hart, C.-T. Dai, Geert Hellings
Publikováno v:
2017 IEEE International Reliability Physics Symposium (IRPS).
Latchup (LU) had been considered to be less important in advanced CMOS technologies. However, I/O interface and analog applications can still operate at high voltage (e.g., 1.8V or 3.3V) in sub-20nm bulk FinFET technologies. LU threats are never elim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a88ab94216ff7e5020d4bb2b897f528c
https://doi.org/10.1109/irps.2017.7936368
https://doi.org/10.1109/irps.2017.7936368
Autor:
Larry Horwitz, Michael J. Hart, Vassili Kireev, Matthew Hogan, Mohammed Fakhruddin, James Karp
Publikováno v:
MWSCAS
Custom ESD protection without increasing loading capacitance is demonstrated for transmitter (TX) and receiver (RX) pins of the Xilinx Zynq UltraScale+ Microprocessor System-on-Chip (MPSoC) transceivers. Optimized T-coil cancellation was applied at a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bab67056d2c77dcf0ed70835b1117165
https://doi.org/10.1109/mwscas.2016.7869952
https://doi.org/10.1109/mwscas.2016.7869952
Autor:
Mohammed Fakhruddin, Phoumra Tan, James Karp, Rawat Mini, Vassili Kireev, Dean Tsaggaris, Michael J. Hart
Publikováno v:
2016 IEEE International Reliability Physics Symposium (IRPS).
Methodology proposed that relates 200V CDM voltage specification of S20.20-2014 standard to a realistic 100–200mA CDM peak current for inter-die interfaces. Tribology is considered to be the source of charge accumulation on the bare die during 3D/2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df56eab0687b941fa75b6e2b2a822347
https://doi.org/10.1109/irps.2016.7574556
https://doi.org/10.1109/irps.2016.7574556
Publikováno v:
Journal of Physics D: Applied Physics. 40:2143-2149
Barrier parameters of a thermally grown SiOx gate oxide are derived by relating the SIMS oxygen concentration profile to the barrier height. Even in the simple analytical form such a graded barrier model agrees with the tunnelling current and its vol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d59b5cc4c3cb93c0459aa7147b9757e7
https://doi.org/10.1088/0022-3727/40/7/043
https://doi.org/10.1088/0022-3727/40/7/043
Publikováno v:
2015 IEEE Radiation Effects Data Workshop (REDW).
The single-event response vs. temperature and Vcc supply voltage of the 20nm Kintex UltraScale FPGA is characterized using a 64 MeV proton beam as proxy for atmospheric neutron. Single-event upset and multi-bit upset results are presented.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3142d1d29b5af0d8daf873372546558
https://doi.org/10.1109/redw.2015.7336718
https://doi.org/10.1109/redw.2015.7336718
Publikováno v:
2015 IEEE Radiation Effects Data Workshop (REDW).
The single-event response of Xilinx 20nm UltraScale Kintex FPGA is characterized using neutron, 64 MeV proton, thermal neutron and alpha foil irradiation sources. Single-event upset and multi-bits upset results are presented.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ed27d4a4e55c63eec1b0db2738f9388
https://doi.org/10.1109/redw.2015.7336723
https://doi.org/10.1109/redw.2015.7336723
Publikováno v:
Journal of Applied Physics. 95:2490-2494
Degradation and time dependent breakdown of SiO2 gate oxides are discussed based on the Anderson–Mott theory of amorphous solids with dangling bonds as diamagnetic “negative Hubbard U” centers. Negative-U dangling bonds in the oxide are either
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38f5a50bc2c5562bea3ea10f2351b28e
https://doi.org/10.1063/1.1643773
https://doi.org/10.1063/1.1643773