Zobrazeno 1 - 10
of 18
pro vyhledávání: '"James K. Schaeffer"'
Autor:
J. Hildreth, W.J. Taylor, D. Tekleab, Brian A. Winstead, K. Junker, C. Capasso, David C. Gilmer, S. Samavedam, James K. Schaeffer
Publikováno v:
IEEE Transactions on Electron Devices. 57:898-904
Achieving low p-channel metal-oxide-semiconductor (PMOS) threshold voltages with metal gates and high-k dielectrics is challenging with conventional gate-first complimentary metal-oxide-semiconductor process integration. This study, for the first tim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54d0ba75134f35f935cab9ac74163e63
https://doi.org/10.1109/ted.2010.2041866
https://doi.org/10.1109/ted.2010.2041866
Autor:
Gregory S. Spencer, Dina H. Triyoso, M. Raymond, Rich Gregory, Rama I. Hegde, James K. Schaeffer
Publikováno v:
2009 IEEE International Conference on IC Design and Technology.
One method to further scale hafnium based dielectrics is to stabilize the tetragonal phase of HfO 2 via zirconium addition. In this paper we investigated factors impacting stabilization of tetragonal phase in thin Hf x Zr 1−x O 2 high-k dielectrics
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a927023b6326a15a7380b631abc6466c
https://doi.org/10.1109/icicdt.2009.5166272
https://doi.org/10.1109/icicdt.2009.5166272
Autor:
Dechao Guo, Myung-Hee Na, Y. Tsang, R. Mo, Huiming Bu, Karthik Ramani, Kathryn T. Schonenberg, Eduard A. Cartier, Naim Moumen, R. Knarr, Wei He, M. Hargrove, Ricardo A. Donaton, Siddarth A. Krishnan, Keith Kwong Hon Wong, James K. Schaeffer, Ravikumar Ramachandran, Eric C. Harley, X. Wang, E. Luckowski, Vijay Narayanan, K. Henson, Michael P. Chudzik, B. Zhang, W. Yan, D.-G. Park, Rashmi Jha, Martin M. Frank, Michael A. Gribelyuk, Unoh Kwon, Mukesh Khare, R. Arndt, Todd Bailey, Yue Liang, Troy L. Graves-Abe, C. DeWan, R. Carter, Joseph F. Shepard
Publikováno v:
2008 IEEE International Electron Devices Meeting.
CMOS devices with high-k/metal gate stacks have been fabricated using a gate-first process flow and conventional stressors at gate lengths of 25 nm, highlighting the scalability of this approach for high performance SOI CMOS technology. AC drive curr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f68ab8716310b22183c308eff2c5075a
https://doi.org/10.1109/iedm.2008.4796774
https://doi.org/10.1109/iedm.2008.4796774
Autor:
Dina H. Triyoso, Rama I. Hegde, Rich Gregory, Nevine Rochat, David C. Gilmer, S. Samavedam, James K. Schaeffer, Vidya Kaushik
Publikováno v:
MRS Proceedings. 996
In this paper, various approaches to extend scalability of Hafnium-based dielectrics are reported. Among the three crystal phases of HfO2 (monoclinic, cubic and tetragonal), the tetragonal phase has been reported to have the highest dielectric consta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51c0d0545a1a8062d3266359d0b8fca6
https://doi.org/10.1557/proc-0996-h03-01
https://doi.org/10.1557/proc-0996-h03-01
Autor:
Michael A. Sadd, W.J. Taylor, C. Capasso, Matthew W. Stoker, S. Kalpat, James K. Schaeffer, D. Triyoso, D. Roan, A. Haggag, S. B. Samavedam, David C. Gilmer, Rama I. Hegde, B. E. White
Publikováno v:
Extended Abstracts of the 2007 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37805312ce68a22f7a3cf5700995ae2c
https://doi.org/10.7567/ssdm.2007.a-1-1
https://doi.org/10.7567/ssdm.2007.a-1-1
Autor:
D. Roan, Byoung W. Min, A. Haggag, David Burnett, James K. Schaeffer, M. Raymond, Konstantin V. Loiko, Brian A. Winstead, E. Verret, Rama I. Hegde, C. Capasso, Ana Olivia Ruíz Martínez, N. Cave, J. Smith, Philip J. Tobin, M. Foisy, E. Luckowski, J.-Y. Nguyen, S. Venkatesan, D. Jovanovic, C. Happ, L. Hebert, S. Kalpat, W.J. Taylor, L.B. La, Dina H. Triyoso, S. Samavedam, S.B. White, David C. Gilmer
Publikováno v:
2006 International Electron Devices Meeting.
We present a low cost, single metal gate/high-k gate stack integration, which provides a very high performing NMOS coupled with a counter-doped PMOS for a 45nm low power (LP) CMOS technology. Inversion Tox (Tinv) values of 16Aring/18Aring (NMOS/PMOS)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd81afcccbde4413c1fb2d4635799728
https://doi.org/10.1109/iedm.2006.346861
https://doi.org/10.1109/iedm.2006.346861
Autor:
James K. Schaeffer, D. Roan, C. Capasso, David C. Gilmer, J. Smith, M. Raymond, Rama I. Hegde, Dina H. Triyoso, Greg Spencer, W.J. Taylor, S. Samavedam
Publikováno v:
2006 European Solid-State Device Research Conference.
For the first time, we report on the beneficial result for minimizing the activation thermal budget using LASER anneals with metal-oxide-gate-electrode/high-k dielectric MOSFETs. With LASER activation, EOT for PMOS conductive metal-oxide gated device
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d94c630f6c433dfa6756aa6cc06ea1b1
https://doi.org/10.1109/essder.2006.307710
https://doi.org/10.1109/essder.2006.307710
Autor:
Y.H. Chili, R. Noble, S. Kalpat, Philip J. Tobin, M. Jahanbani, E. Luckowski, B.W. Chan, Dina H. Triyoso, E.A. Hebert, H.-H. Tseng, D. Sing, Z.X. Jiang, Bruce E. White, L. R. C. Fonseca, J. Conner, S. Backer, W.J. Taylor, A. Haggag, Olubunmi O. Adetutu, David C. Gilmer, Rama I. Hegde, M. Ramon, James K. Schaeffer, C. Capasso
Publikováno v:
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
Using a novel fluorinated TaxCy/high-k gate stack, we show breakthrough device reliability and performance improvements. This is a critical result since threshold voltage instability may be a fundamental problem and performance degradation for high-k
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::081c51530436311b45fc8b5ffb6e084c
https://doi.org/10.1109/iedm.2005.1609447
https://doi.org/10.1109/iedm.2005.1609447
Autor:
Stefan Zollner, Rama I. Hegde, M. Ramon, Rich Gregory, Bruce E. White, E. Luckowski, J.-Y. Nguyen, Matthew W. Stoker, James K. Schaeffer, A. Haggag, X.-D. Wang, B.W. Chan, R. Cotton, C. Capasso, M. Moosa, Yuan-Hung Chiu, S. Kalpat, Dina H. Triyoso, H.-H. Tseng, C. Tracy, L. R. C. Fonseca, D. Roan, M. Raymond, Philip J. Tobin, R. Rai, W.J. Taylor, D. Werho, E.A. Hebert, L.B. La, David C. Gilmer
Publikováno v:
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
For the first time we report on the development of a novel hafnium zirconate (HfZrOx) gate dielectric with a TaxCy metal gate. Compared to HfO2, the new HfZrOx gate dielectric showed: (1) higher transconductance, (2) less charge trapping, (3) higher
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28681fec45a94585e964a6dccabefe88
https://doi.org/10.1109/iedm.2005.1609259
https://doi.org/10.1109/iedm.2005.1609259
Autor:
Rama I. Hegde, D. Triyoso, E. A. Hebert, S. B. Samavedam, James K. Schaeffer, S. Kalpat, M. Raymond, D. Roan, J. Jiang, David C. Gilmer, L.B. La, Rich Gregory, C. Capasso, X-D. Wang, B. E. White, T. Y. Luo, Raghaw S. Rai, E. Luckowski, J.-Y. Nguyen
Publikováno v:
Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1743bc1eba17f61a70d8da0209b5a3b1
https://doi.org/10.7567/ssdm.2006.j-7-1
https://doi.org/10.7567/ssdm.2006.j-7-1