Zobrazeno 1 - 10
of 84
pro vyhledávání: '"James H. Comfort"'
Autor:
J.Y.-C. Sun, John D. Cressler, Bernard S. Meyerson, Emmanuel F. Crabbe, James H. Comfort, David L. Harame, T. Tice
Publikováno v:
IEEE Transactions on Electron Devices. 42:455-468
A detailed review of SiGe epitaxial base technology is presented, which chronicles the progression of research from materials deposition through device and integration demonstrations, culminating in the first SiGe integrated circuit application. In p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::431b4fd2ee280f6f2db9cfe0b4d05f7a
https://doi.org/10.1109/16.368039
https://doi.org/10.1109/16.368039
Autor:
J.Y.-C. Sun, James H. Comfort, Emmanuel F. Crabbe, David L. Harame, John D. Cressler, Bernard S. Meyerson, T. Tice
Publikováno v:
IEEE Transactions on Electron Devices. 42:469-482
For pt. I, see ibid., vol. 3, p. 455-68 (1995). This part focuses on process integration concerns, first described in general terms and then detailed through an extensive review of both simple non-self-aligned device structures and more complex self-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::850fd7c095e6b32395d69209e6e6419a
https://doi.org/10.1109/16.368043
https://doi.org/10.1109/16.368043
Autor:
Gary L. Patton, David L. Harame, Bernard S. Meyerson, J.M.C. Stork, Emmanuel F. Crabbe, James H. Comfort
Publikováno v:
International Journal of High Speed Electronics and Systems. :473-491
Recent advances in thin film growth techniques, notably the maturation of low temperature silicon epitaxy, have enabled the routine fabrication of highly controlled dopant and silicon:germanium alloy profiles. These capabilities, combined with refine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39ad256a6fdbb46310be28844ab87c67
https://doi.org/10.1142/s012915649400019x
https://doi.org/10.1142/s012915649400019x
Autor:
B.A. Chappell, James D. Warnock, Ghavam G. Shahidi, P.A. McFarland, R.H. Dennard, M.R. Polcari, Terry I. Chappell, Bijan Davari, J.S. Neely, James H. Comfort, R.L. Franch, Tak H. Ning, C.A. Anderson
Publikováno v:
IEEE Transactions on Electron Devices. 41:2405-2412
An advanced 0.1 /spl mu/m CMOS technology on SOI is presented. In order to minimize short channel effects, relatively thick nondepleted (0.15 /spl mu/m) SOI film, highly nonuniform channel doping and source-drain extension-halo were used. Excellent s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05cb9369827c063e0956edeaca1e1d96
https://doi.org/10.1109/16.337456
https://doi.org/10.1109/16.337456
Publikováno v:
IEEE Transactions on Electron Devices. 40:542-556
For pt.I see ibid., vol.40, no.3, p.525-41 (1993). The circuit performance issues associated with optimizing epitaxial Si- and SiGe-base bipolar technology for the liquid-nitrogen temperature environment are examined in detail. It is conclusively dem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2656b84881d74b3b624c591e1b7c5b5
https://doi.org/10.1109/16.199359
https://doi.org/10.1109/16.199359
Autor:
J.M.C. Stork, John D. Cressler, J.Y.-C. Sun, James H. Comfort, Bernard S. Meyerson, Emmanuel F. Crabbe, Gary L. Patton
Publikováno v:
IEEE Transactions on Electron Devices. 40:525-541
The DC design considerations associated with optimizing epitaxial Si- and SiGe-base bipolar transistors for the 77-K environment are examined in detail. Transistors and circuits were fabricated using four different vertical profiles, three with a gra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d51c23baca9349f18ebf915bf999fbbf
https://doi.org/10.1109/16.199358
https://doi.org/10.1109/16.199358
Autor:
M. Gilbert, Keith A. Jenkins, Emmanuel F. Crabbe, James H. Comfort, R.C. McIntosh, Joachim N. Burghartz, J.Y.-C. Sun, J.M.C. Stork, C.L. Stanis, John D. Cressler, Woo-Hyeong Lee, J. Wamock
Publikováno v:
Microelectronic Engineering. 19:531-534
A novel bipolar isolation structure with capability of significantly reducing collector-base capacitance and base resistance is presented. A silicon-on-insulator (SOI) region surrounding the collector opening is used to minimize the collector window
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::793c0674fda10769da922a187aa469ce
https://doi.org/10.1016/0167-9317(92)90489-e
https://doi.org/10.1016/0167-9317(92)90489-e
Autor:
M. Arienzo, David L. Harame, Subramanian S. Iyer, V. P. Kesan, Yuan-Chen Sun, Johannes M.C. Stark, Emmanuel F. Crabbe, James H. Comfort, Gary L. Patton, Bernard S. Meyerson
Publikováno v:
Microelectronic Engineering. 19:519-527
SiGe alloys have been successfully to a number of semiconductor devices, including bipolar heterojunction transistors, field effect transistors (FET's), tunneing and optoelectronic devices and structures. This review paper will first summarize the re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::331dafb8a31e95b823d4bb726e6236c9
https://doi.org/10.1016/0167-9317(92)90488-d
https://doi.org/10.1016/0167-9317(92)90488-d
Autor:
James H. Comfort, Emmanuel F. Crabbe, Ching-Te Chuang, K. Chin, Gary L. Patton, Johannes M. C. Stork
Publikováno v:
IEEE Journal of Solid-State Circuits. 27:225-228
A detailed study on the leverage of high-f/sub T/ transistors for advanced high-speed bipolar circuit applications is presented. It is shown that for the standard ECL (emitter-coupled logic) circuit, the leverage of high f/sub T/ is limited by the pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f1b97186dee6b57bfbe3baf63860113
https://doi.org/10.1109/4.127348
https://doi.org/10.1109/4.127348
Autor:
John D. Cressler, James H. Comfort, J.Y.-C. Sun, C.L. Stanis, Keith A. Jenkins, T. A. Brunner, J.M.C. Stork, Joachim N. Burghartz
Publikováno v:
Microelectronic Engineering. 15:11-14
Design issues for a high-performance bipolar technology with Si or SiGe epitaxial base are discussed. Narrow and shallow polysilicon emitter formation and extrinsic base design for low base resistance are investigated using selective epitaxy emitter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19c6258bc779e780d3e6144d2633d99e
https://doi.org/10.1016/0167-9317(91)90172-a
https://doi.org/10.1016/0167-9317(91)90172-a