Zobrazeno 1 - 7
of 7
pro vyhledávání: '"James Gregory Couillard"'
Autor:
Johannes Moll, James Gregory Couillard, Jayantha Senawiratne, Patrick G. Whiting, Carlo Kosik Williams, Jeffery Cites
Publikováno v:
Solid State Phenomena. :313-317
Electrically active defects induced by ion implantation of boron and phosphorus into silicon and their recovery under isothermal annealing at 450 °C were investigated using Deep Level Transient Spectroscopy (DLTS) and Energy Resolved Tunneling Photo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d701478afc6457f2891f65107b26de6
https://doi.org/10.4028/www.scientific.net/ssp.156-158.313
https://doi.org/10.4028/www.scientific.net/ssp.156-158.313
Autor:
Carlo Kosik Williams, Germain Fenger, Jeffrey Scott Cites, Robert George Manley, David Dawson-Elli, James Gregory Couillard, Karl D. Hirschman
Publikováno v:
ECS Transactions. 8:223-228
The development of a new silicon-on-glass (SiOG) substrate and device technology is presented. The SiOG material technology consists of anodic bonding and an implant-induced separation to transfer a single crystalline silicon film onto a glass substr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1bb1ccb074e685dd8b14c07ecd44fb57
https://doi.org/10.1149/1.2767312
https://doi.org/10.1149/1.2767312
Autor:
Seung-Hwan Shim, In-Do Chung, Kishor Purushottam Gadkaree, Keun Woo Park, Kook Chul Moon, Jeffrey Scott Cites, James Gregory Couillard, Young-Jin Chang, Sung Eun Ahn, Jae Beom Choi, Hoon-Kee Min, Kee-Chan Park, Chi-Woo Kim
Publikováno v:
SID Symposium Digest of Technical Papers. 38:1378-1381
We have demonstrated that the single crystalline silicon films on the glass substrates can be utilized in the conventional mass production lines. The single crystalline Si layers were transferred to the 370 mm × 470 mm glass substrates using Silicon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17741a5b66764575e78cff18338feabc
https://doi.org/10.1889/1.2785570
https://doi.org/10.1889/1.2785570
Autor:
Karl D. Hirschman, James Gregory Couillard, C.G. Shea, Robert George Manley, C. Kosik Williams, Patricia M. Meller, A.M. McCabe, Jayantha Senawiratne
Publikováno v:
2009 IEEE International SOI Conference.
The fabrication and analysis of CMOS devices fabricated on Silicon-on-Glass (SiOG) and compared to SOI (SIMOX) substrates are presented. Key aspects of the low temperature (≪ 600 °C) fabrication process are described. The devices from the SiOG sub
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c8d83829562419755440ef29433c3e2
https://doi.org/10.1109/soi.2009.5318791
https://doi.org/10.1109/soi.2009.5318791
Publikováno v:
2009 IEEE International SOI Conference.
This paper is an introduction to a new Silicon-on-Glass substrate technology. The fabrication process and material properties of SiOG are presented. The semiconductor film has good electrical properties, comparable to other SOI technologies, and is s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3f0dc3d4baaf109852cc464e1cdcb83
https://doi.org/10.1109/soi.2009.5318764
https://doi.org/10.1109/soi.2009.5318764
Autor:
Jayantha Senawiratne, Johannes Moll, Jeffrey Scott Cites, C. Kosik Williams, Patrick G. Whiting, James Gregory Couillard
Publikováno v:
2009 IEEE International SOI Conference.
We investigated ion implantation induced electrically active defects in p-type silicon using Deep Level Transient Spectroscopy (DLTS) and photoconductivity spectroscopy at cryogenic temperatures. Implantation related deep traps in H 2 , B11, and P31
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03788d017efffc515f738873188d9142
https://doi.org/10.1109/soi.2009.5318742
https://doi.org/10.1109/soi.2009.5318742
Autor:
Jae Hwan Oh, Ji-Su Ahn, Sungchul Kim, Jae Won Choi, C. Kosik Williams, Jin Jang, James Gregory Couillard, Jun Hyuk Cheon
Publikováno v:
Electrochemical and Solid-State Letters. 13:J85
We have studied the impact of off-bias stress on the performance of thin film transistors (TFTs) fabricated on single crystalline silicon-on-glass substrates. The p-channel TFT transfer characteristics typically exhibit excellent on-state performance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf4e9289f98d63f436a6f9e704ecd3e4
https://doi.org/10.1149/1.3416325
https://doi.org/10.1149/1.3416325