Zobrazeno 1 - 10
of 10
pro vyhledávání: '"James G. McHugh"'
Autor:
Thomas Astles, James G. McHugh, Rui Zhang, Qian Guo, Madeleine Howe, Zefei Wu, Kornelia Indykiewicz, Alex Summerfield, Zachary A. H. Goodwin, Sergey Slizovskiy, Daniil Domaretskiy, Andre K. Geim, Vladimir Falko, Irina V. Grigorieva
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-11 (2024)
Abstract The ongoing efforts to optimize rechargeable Li-ion batteries led to the interest in intercalation of nanoscale layered compounds, including bilayer graphene. Its lithium intercalation has been demonstrated recently but the mechanisms underp
Externí odkaz:
https://doaj.org/article/e866d7e6368a40b4baf82badd72c7ccf
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-7 (2024)
Abstract Semiconducting transition metal dichalcogenides (MX2) occur in 2H and rhombohedral (3R) polytypes, respectively distinguished by anti-parallel and parallel orientation of consecutive monolayer lattices. In its bulk form, 3R-MX2 is ferroelect
Externí odkaz:
https://doaj.org/article/945b72a7373149868136e430ca7a61ed
Publikováno v:
Data in Brief, Vol 45, Iss , Pp 108702- (2022)
The data in this article are related to the research article “Stacking-Mediated Diffusion of Ruthenium Nanoclusters in Bilayer Graphene and Graphite” (J G McHugh, 2022). The data consists of Ru atom cluster intercalation calculations on graphene
Externí odkaz:
https://doaj.org/article/39827917918a4df9a448c9a107ee09b6
Autor:
Soumyabrata Roy, Antonios Michail, Frank Lee, Pulickel M. Ajayan, Peter Lynch, Alice A. K. King, Nicola M. Pugno, Konstantinos Papagelis, Muhammad M. Rahman, James G. McHugh, Matthew Large, Alan B. Dalton, M. A. S. R. Saadi, Dimitris Anestopoulos, Aline Amorim Graf, John Parthenios, Manoj Tripathi, Sean P. Ogilvie
Publikováno v:
ACS Nano. 15:2520-2531
Two-dimensional materials such as graphene and molybdenum disulfide are often subject to out-of-plane deformation, but its influence on electronic and nanomechanical properties remains poorly understood. These physical distortions modulate important
Autor:
Anthony Impellizzeri, Pavlos Mouratidis, James G. McHugh, Christopher P. Ewels, Dogan Erbahar, Kenny Jolley
Dislocations are a central concept in materials science, which dictate the plastic deformation and damage evolution in materials. Layered materials such as graphite admit two general types of interlayer dislocations: basal and prismatic dislocations,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::328f2d6a0473116be886db3b8fa118fb
http://arxiv.org/abs/2110.12061
http://arxiv.org/abs/2110.12061
The ripplocation is a crystallographic defect which is unique to layered materials, combining nanoscale delamination with the crystallographic slip of a basal dislocation. Here, we have studied basal dislocations and ripplocations, in single and mult
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2bfea794abaf4b724c2d31d18a1db724
Publikováno v:
Journal of Nuclear Materials. 533:152123
A clear understanding of the diffusive behaviour of a wide variety of impurities is essential for the construction and safe operation of the class of nuclear reactors which employ graphite as a shielding material. As a means of gaining insight into t
Publikováno v:
Materials; Volume 7; Issue 4; Pages: 2795-2814
Materials
Materials, Vol 7, Iss 4, Pp 2795-2814 (2014)
Materials
Materials, Vol 7, Iss 4, Pp 2795-2814 (2014)
We study spin relaxation in n-type bulk GaAs, due to the Dyakonov--Perel mechanism, using ensemble Monte Carlo methods. Our results confirm that spin relaxation time increases with the electronic density in the regime of moderate electronic concentra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5be4ff11e2de9cd1618f0cc0ec1dfb91
http://arxiv.org/abs/1610.05698
http://arxiv.org/abs/1610.05698
Publikováno v:
SSRN Electronic Journal.
The Supreme Court continues to remain in an uneasy equilibrium in dealing with partisan gerrymandering. Currently, one set of justices believes, for various reasons, that courts are not the appropriate venue for addressing the subject and would decla
Autor:
Muhammad M. Rahman, Venkataramana Gadhamshetty, Alan B. Dalton, Enrico Gnecco, Sean P. Ogilvie, Erica Iacob, Roberto Guarino, G. Paolicelli, Nicola M. Pugno, Alberto Rota, James G. McHugh, Andrea Mescola, Sergio Valeri, Pulickel M. Ajayan, Manoj Tripathi
Publikováno v:
Small (Weinh., Print) 17 (2021): 2104487-1–2104487-9. doi:10.1002/smll.202104487
info:cnr-pdr/source/autori:Mescola A.; Paolicelli G.; Ogilvie S.P.; Guarino R.; McHugh J.G.; Rota A.; Iacob E.; Gnecco E.; Valeri S.; Pugno N.M.; Gadhamshetty V.; Rahman M.M.; Ajayan P.; Dalton A.B.; Tripathi M./titolo:Graphene Confers Ultralow Friction on Nanogear Cogs/doi:10.1002%2Fsmll.202104487/rivista:Small (Weinh., Print)/anno:2021/pagina_da:2104487-1/pagina_a:2104487-9/intervallo_pagine:2104487-1–2104487-9/volume:17
Small
info:cnr-pdr/source/autori:Mescola A.; Paolicelli G.; Ogilvie S.P.; Guarino R.; McHugh J.G.; Rota A.; Iacob E.; Gnecco E.; Valeri S.; Pugno N.M.; Gadhamshetty V.; Rahman M.M.; Ajayan P.; Dalton A.B.; Tripathi M./titolo:Graphene Confers Ultralow Friction on Nanogear Cogs/doi:10.1002%2Fsmll.202104487/rivista:Small (Weinh., Print)/anno:2021/pagina_da:2104487-1/pagina_a:2104487-9/intervallo_pagine:2104487-1–2104487-9/volume:17
Small
Friction-induced energy dissipation impedes the performance of nanomechanical devices. Nevertheless, the application of graphene is known to modulate frictional dissipation by inducing local strain. This work reports on the nanomechanics of graphene
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b320e75ca4389a61fca05e1188766003
https://infoscience.epfl.ch/record/289626
https://infoscience.epfl.ch/record/289626