Zobrazeno 1 - 8
of 8
pro vyhledávání: '"James G Partridge"'
Autor:
Phuong Y. Le, Hilal Nagib, Luke A. Sylvander, Martin W. Allen, Dougal G. McCulloch, James G. Partridge, Hiep N. Tran
Publikováno v:
ACS Applied Electronic Materials. 5:2885-2892
Publikováno v:
Surface and Interface Analysis. 55:373-382
Autor:
Sultan, Albarakati, Cheng, Tan, Zhong-Jia, Chen, James G, Partridge, Guolin, Zheng, Lawrence, Farrar, Edwin L H, Mayes, Matthew R, Field, Changgu, Lee, Yihao, Wang, Yiming, Xiong, Mingliang, Tian, Feixiang, Xiang, Alex R, Hamilton, Oleg A, Tretiakov, Dimitrie, Culcer, Yu-Jun, Zhao, Lan, Wang
Publikováno v:
Science Advances
The observation of an antisymmetric magnetoresistance in a trilayer van der Waals heterostructure Fe3GeTe2/graphite/Fe3GeTe2.
With no requirements for lattice matching, van der Waals (vdW) ferromagnetic materials are rapidly establishing themsel
With no requirements for lattice matching, van der Waals (vdW) ferromagnetic materials are rapidly establishing themsel
Autor:
James G Partridge
Publikováno v:
SSRN Electronic Journal.
During the Great Recession home equity loan balances increased despite aggregate home equity falling (and overall debt not changing). Entrepreneurs are responsible for 77% of this increase, while only representing 13% of the population. I argue that
Autor:
James G Partridge
Publikováno v:
SSRN Electronic Journal.
Over the last 25 years there has been a drastic change in the distribution of corporate bond ratings. Between 1985 and 2010 the number of firms issuing AAA or AA rated debt has dropped by 70%, while the number of firms issuing A or BBB rated debt has
Autor:
James G. Partridge, S.R. Davies
Publikováno v:
SPIE Proceedings.
The work described here uses microfabrication methods to integrate semiconductor devices with micromachined waveguide cavities to form submillimetre-wave frequency multipliers. Processing schemes involve both planar and three-dimensional lithography,
Autor:
S.R. Davies, James G. Partridge
Publikováno v:
SPIE Proceedings.
For applications at submillimetre wavelengths, an increasing emphasis is being made on more integrated front-end circuits, in which semiconductor devices plus components of the embedding structures in which they are mounted are formed as part of the
Publikováno v:
Applied Physics Express; Jun2016, Vol. 9 Issue 6, p1-1, 1p