Zobrazeno 1 - 9
of 9
pro vyhledávání: '"James Fred Salzman"'
Autor:
En Xia Zhang, Scott L. Jordan, N. J. Gaspard, Cheryl J. Marshall, Rick Wong, N. A. Dodds, S.-J. Wen, Dale McMorrow, Jonathan A. Pellish, Robert A. Reed, James Fred Salzman, Jeffrey H. Warner, Bharat L. Bhuva, Nicolas J.-H. Roche, William G. Bennett, Ronald D. Schrimpf, Nicholas C. Hooten
Publikováno v:
IEEE Transactions on Nuclear Science. 59:2642-2650
Heavy ion, neutron, and laser experimental data are used to evaluate the effectiveness of various single event latchup (SEL) hardening strategies, including silicon-on-insulator (SOI), triple well, and guard rings. Although SOI technology is widely r
Publikováno v:
2016 IEEE Radiation Effects Data Workshop (REDW).
MSP430FR55739 tests at the Lawrence Berkeley National Laboratory (LBNL) Cyclotron used the Milli-Beam apparatus to restrict exposure to specific blocks. Instruction lockstep techniques were employed to synchronize test unit outputs with an unexposed
Publikováno v:
2016 IEEE Radiation Effects Data Workshop (REDW).
The SEL response of the VSP1221 is improved by exposure to 14MeV monoenergetic neutrons while only causing small changes in the parametric response. This approach could be used to advance COTS components in spaceborne applications.
Autor:
Rafi Albarian, S.R. Cox, Bruce Holcombe, S. P. Buchner, R.L. Pease, Kirby Kruckmeyer, Sam Burns, G. Chaumont, A. Ouellet, James Fred Salzman, J.D. Forney, Bradley A. Little, M.A. Carts, H. Duperray, Dakai Chen, Ken LaBel, A. Phan
Publikováno v:
IEEE Transactions on Nuclear Science. 58:2983-2990
We present results on the effects of ELDRS at dose rates of 10, 5, 1, and 0.5 mrad(Si)/s for a variety of commercial, radiation hardened, and ELDRS-free devices. We observed low dose rate enhancement below 10 mrad(Si)/s in several different part type
Autor:
Sam Burns, Martin A. Carts, Martha V. O'Bryan, Dakai Chen, Melanie D. Berg, James Fred Salzman, Stephen P. Buchner, Farokh Irom, Nick W. van Vonno, Jean-Marie Lauenstein, Hak Kim, Kenneth A. LaBel, E. T. Thomson, Jonathan A. Pellish, Alan P. Williams, Theju M. Bernard, Michael A. Xapsos, A.B. Sanders, T.R. Oldham, Ray Ladbury, L. G. Pearce, Anthony M. Phan, Paul W. Marshall, Rafi Albarian, H. W. Satterfield, Cheryl J. Marshall
Publikováno v:
2010 IEEE Radiation Effects Data Workshop.
We present the results of single event effects (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results.
Autor:
Rafi Albarian, James Fred Salzman, Hak Kim, Dakai Chen, Anthony M. Phan, Sam Burns, Paul W. Marshall, Kenneth A. LaBel, Bradley A. Little, Jonathan A. Pellish, Bruce Holcombe
Publikováno v:
2010 IEEE Radiation Effects Data Workshop.
We present results on heavy-ion and proton irradiations for commercial SiGe BiCMOS differential amplifiers: LTC6400-20 from Linear Technology and THS4304 from Texas Instruments. We found that the devices are susceptible to heavy-ion-induced SETs, wit
Autor:
David Alexander, Ken Hunt, W. Morris, Robert Fuller, Jon Gwin, David Gifford, Rex Lowther, James Fred Salzman
Publikováno v:
2010 IEEE Radiation Effects Data Workshop.
A hardened version of Texas Instruments'' VC33 Digital Signal Processor was created without any mask changes. The commercial mask set was processed using Silicon Space Technology''s HardSIL™ process variant to produce the hardened version. Radiatio
Autor:
Anthony M. Phan, Bruce Holcombe, G. Chaumont, Kenneth A. LaBel, Bradley A. Little, S.R. Cox, Kirby Kruckmeyer, Al Ouellet, James Forney, Rafi Albarian, Sam Burns, Dakai Chen, Martin A. Carts, James Fred Salzman, Ronald Pease, Herve Duperray
Publikováno v:
2010 IEEE Radiation Effects Data Workshop.
We present results on the effects on ELDRS at dose rates of 10, 5, 1, and 0.5 mrad(Si)/s for a variety of radiation hardened and commercial devices. We observed low dose rate enhancement below 10 mrad(Si)/s in several different parts. The magnitudes
Publikováno v:
IEEE Transactions on Nuclear Science. 34:1676-1679
Use of GaAs/AlGaAs heterojunctions at the base emitter junction in MBE-type GaAs bipolar circuits reduces the thickness of the SEU sensitive volume associated with each transistor to about 0.2?m. This results in a sharply reduced charge collection an