Zobrazeno 1 - 10
of 10
pro vyhledávání: '"James Forney"'
Publikováno v:
The FASEB Journal. 36
Autor:
Alyson D. Topper, Melanie D. Berg, Jonathan A. Pellish, Jean-Marie Lauenstein, James Forney, Edward P. Wilcox, Jason M. Osheroff, Peter J. Majewicz, Anthony M. Phan, Hak Kim, Edward J. Wyrwas, Caroline M. Fedele, Megan C. Casey, Max F. Chaiken, Thomas A. Carstens, Martha V. O'Bryan, Michael J. Campola, Donna J. Cochran
Publikováno v:
2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC).
Total ionizing dose, displacement damage dose, and single event effects testing were performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include FETs, flash memory, FPGAs, optoel
Publikováno v:
Biochemistry and Molecular Biology Education. 44:517-525
Transformation of research in all biological fields necessitates the design, analysis and, interpretation of large data sets. Preparing students with the requisite skills in experimental design, statistical analysis, and interpretation, and mathemati
Autor:
Christopher James Forney
Publikováno v:
Comitatus: A Journal of Medieval and Renaissance Studies. 42:55-88
As the settlement and pilgrimage of Santiago de Compostela grew, the city’s central spaces gradually became sources of rupture between local residents and pilgrims. The important places of Compostela, such as religious community buildings, the pala
Publikováno v:
Biochemistry and molecular biology education : a bimonthly publication of the International Union of Biochemistry and Molecular Biology. 44(6)
Transformation of research in all biological fields necessitates the design, analysis and, interpretation of large data sets. Preparing students with the requisite skills in experimental design, statistical analysis, and interpretation, and mathemati
Autor:
James Forney, Alyson D. Topper, Brian Triggs, Ronald Pease, Dakai Chen, Tony Kazmakites, Raymond L. Ladbury, Kenneth A. LaBel
Publikováno v:
2012 IEEE Radiation Effects Data Workshop.
We evaluate the low dose rate sensitivity in several families of discrete bipolar transistors across device parameter, quality assurance level, and irradiation bias configuration. The 2N2222 showed the most significant low dose rate sensitivity, with
Autor:
Anthony M. Phan, Bruce Holcombe, G. Chaumont, Kenneth A. LaBel, Bradley A. Little, S.R. Cox, Kirby Kruckmeyer, Al Ouellet, James Forney, Rafi Albarian, Sam Burns, Dakai Chen, Martin A. Carts, James Fred Salzman, Ronald Pease, Herve Duperray
Publikováno v:
2010 IEEE Radiation Effects Data Workshop.
We present results on the effects on ELDRS at dose rates of 10, 5, 1, and 0.5 mrad(Si)/s for a variety of radiation hardened and commercial devices. We observed low dose rate enhancement below 10 mrad(Si)/s in several different parts. The magnitudes
Autor:
Paul W. Marshall, James Forney, C. Poivey, Dave Petrick, S.R. Cox, Ray Ladbury, S.P. Buchner, D.K. Hawkins, Mark P. Baze, Anthony Dung-phan, Martin A. Carts, Martha V. O'Bryan, S.D. Kniffin, Christina Seidleck, Jeremy Karsh, A.B. Sanders, Kenneth A. LaBel, Cheryl J. Marshall, Melanie D. Berg, J.W. Howard, Hak Kim, Ryan Flanigan, M. Friendlich, T.R. Oldham, Wes Powell, T.L. Irwin
Publikováno v:
2007 IEEE Radiation Effects Data Workshop.
Susceptibility of a variety of candidate spacecraft electronics to proton and heavy ion induced single event effects is studied. Devices tested include digital, linear bipolar, and hybrid devices.
Autor:
Martha O'Bryan, Christian Poivey, Scott Kniffin, Stephen Buchner, Ray Ladbury, Timothy Oldham, James Howard, Kenneth LaBel, Anthony Sanders, Melanie Berg, Cheryl Marshall, Paul Marshall, Hak Kim, Anthony Dung-phan, Donald Hawkins, Martin Carts, James Forney, Tim Irwin, Christina Seidleck, Stephen Cox, Mark Friendlich, Ryan Flanigan, Dave Petrick, Wes Powell, Jeremy Karsh, Mark Baze
Publikováno v:
2006 IEEE Radiation Effects Data Workshop.