Zobrazeno 1 - 2
of 2
pro vyhledávání: '"James Egley"'
Autor:
Amaury Gendron-Hansen, Konstantin Korablev, Francis Benistant, Jin Cho, James Egley, Ivan Chakarov
Publikováno v:
2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
In this paper, we analyze the mechanical stress induced from source/drain embedded SiGe (eSiGe) in multiple generations of FinFET technologies. By leveraging TCAD simulations, we show that high stress over the entire fin height could be achieved with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::620fe3f41e69a211141c98fdcb798d61
https://doi.org/10.1109/sispad.2015.7292349
https://doi.org/10.1109/sispad.2015.7292349
Autor:
A. Keshavarzi, James Egley, M-R. Lin, Jin Cho, Konstantin Korablev, Subramani Kengeri, Andreas Knorr, R. J. Miller, S. Luning, Shibly S. Ahmed, U. Schroeder, Andy Wei, Rod Augur, C-H. Shaw, Srinivasa Banna, G. S. Bartlett, Kingsuk Maitra, Dinesh Somasekhar, A. Halliyal, Suresh Venkatesan, Mahbub Rashed
Publikováno v:
2011 International Electron Devices Meeting.
Industry's extensive knowledge of fabricating bulk CMOS planar transistors has made them the device of choice for the cost sensitive foundry semiconductor sector. On advanced nodes the scaling benefits for SoCs will be based on a set of Key Performan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86911f759ffd1df1791dc1c1b01477c8
https://doi.org/10.1109/iedm.2011.6131485
https://doi.org/10.1109/iedm.2011.6131485