Zobrazeno 1 - 10
of 76
pro vyhledávání: '"James E. Maslar"'
Publikováno v:
J Appl Phys
We investigate the use of Raman spectroscopy to measure carrier concentrations in [Formula: see text] GaSb epilayers to aid in the development of this technique for the nondestructive characterization of transport properties in doped semiconductors.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c9ff8313d8d1c7d16ebefd8b1b8b4e95
https://europepmc.org/articles/PMC10190161/
https://europepmc.org/articles/PMC10190161/
Atomic Layer Deposition of Al2O3 Using Trimethylaluminum and H2O: The Kinetics of the H2O Half-Cycle
Publikováno v:
The Journal of Physical Chemistry C. 124:3410-3420
Atomic layer deposition (ALD) of Al2O3 using trimethylaluminum and H2O is known to proceed through sequential surface reactions that leave the surface alternately terminated with AlCH3 and OH groups. Using in situ reflection–absorption infrared spe
Autor:
Berc, Kalanyan, Ryan, Beams, Michael B, Katz, Albert V, Davydov, James E, Maslar, Ravindra K, Kanjolia
Publikováno v:
J Vac Sci Technol A
Potential commercial applications for transition metal dichalcogenide (TMD) semiconductors such as MoS(2) rely on unique material properties that are only accessible at monolayer to few-layer thickness regimes. Therefore, production methods that lend
Publikováno v:
Applied spectroscopy. 74(10)
A nondispersive infrared gas analyzer was demonstrated for investigating metal alkylamide precursor delivery for microelectronics vapor deposition processes. The nondispersive infrared analyzer was designed to simultaneously measure the partial press
Autor:
James E. Maslar, William A. Kimes, Albert V. Davydov, Ryan Beams, Elias Garratt, Berc Kalanyan, Ravindra K. Kanjolia, Stephan J. Stranick, Irina Kalish
Publikováno v:
Chemistry of Materials. 29:6279-6288
High-volume manufacturing of devices based on transition metal dichalcogenide (TMD) ultrathin films will require deposition techniques that are capable of reproducible wafer-scale growth with monolayer control. To date, TMD growth efforts have largel
Publikováno v:
Applied Spectroscopy. 71:2632-2642
A nondispersive infrared (NDIR) gas analyzer was demonstrated for measuring the vapor-phase density of the carbonyl-containing organometallic cobalt precurso μ2-η2-(tBu-acetylene) dicobalthexacarbonyl (CCTBA). This sensor was based on direct absorp
Publikováno v:
J Res Natl Inst Stand Technol
Thin film vapor deposition processes, e.g., chemical vapor deposition, are widely used in high-volume manufacturing of electronic and optoelectronic devices. Ensuring desired film properties and maximizing process yields require control of the chemic
Publikováno v:
Journal of Vacuum Science & Technology A. 39:012403
Low volatility precursors are widely utilized in chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes. Compared to gases and high volatility liquid precursors, delivery of low volatility liquid and solid precursors can be probl
Autor:
James E. Maslar, Brent A. Sperling
Publikováno v:
Journal of Vacuum Science & Technology A. 37:060907
Delivery of low-volatility precursors is a continuing challenge for chemical vapor deposition and atomic layer deposition processes used for microelectronics manufacturing. To aid in addressing this problem, we have recently developed an inline measu
Autor:
Berc, Kalanyan, William A, Kimes, Ryan, Beams, Stephan J, Stranick, Elias, Garratt, Irina, Kalish, Albert V, Davydov, Ravindra K, Kanjolia, James E, Maslar
Publikováno v:
Chemistry of materials : a publication of the American Chemical Society. 29(15)
High volume manufacturing of devices based on transition metal dichalcogenide (TMD) ultra-thin films will require deposition techniques that are capable of reproducible wafer-scale growth with monolayer control. To date, TMD growth efforts have large