Zobrazeno 1 - 10
of 11
pro vyhledávání: '"James E. Levy"'
Autor:
Daniel J. Dorsey, Douglas R. Nichols, James E. Levy, David P. Adams, Liam D. Claus, William Rice, Richard K. Harrison, Matthew B. Jordan
Publikováno v:
IEEE Transactions on Nuclear Science. 68:890-896
Recent advances in semiconductor processing technology have enabled development of a solid-state neutron sensor with exceptional efficiency for its unique reduced size. The boron-10 ( $n$ , alpha) capture reaction is used to detect incident thermal n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5e90d542442eb34a8ac7c6055c0bfc3
https://doi.org/10.1109/tns.2021.3072616
https://doi.org/10.1109/tns.2021.3072616
Autor:
Douglas R. Nichols, James E. Levy, Richard K. Harrison, Liam D. Claus, Matthew B. Jordan, David P. Adams, Daniel J. Dorsey
Publikováno v:
Proposed for presentation at the Nuclear and Space Radiation Effects Conference held November 29 - December 30, 2020 in Santa Fe, NM, US..
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c500440fde200e5a02ede4d7b87455b1
https://doi.org/10.2172/1830935
https://doi.org/10.2172/1830935
Autor:
Lovelace Soirez, Dave Martini, Sara Elizabeth Jensen, Adam Jones, Catherine Bullock, Brian Mattis, James E. Levy
Publikováno v:
3DIC
We demonstrate a front-side process integration method to insert high-density 1.2um diameter Tungsten (W) Through Silicon Vias (TSVs) into advanced-node logic wafers after metal-4. This late-TSV-middle approach offers the ability to build 3D technolo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebeb497eed511c300f0dedca1cbda174
https://doi.org/10.1109/3dic.2016.7970008
https://doi.org/10.1109/3dic.2016.7970008
Autor:
Lloyd C. L. Hollenberg, Richard P. Muller, Rajib Rahman, Andrew D. Greentree, Gerhard Klimeck, Malcolm S. Carroll, James E. Levy
Publikováno v:
Birck and NCN Publications
Coherent Tunneling Adiabatic Passage (CTAP) has been proposed as a long-range physical qubit transport mechanism in solid-state quantum computing architectures. Although the mechanism can be implemented in either a chain of quantum dots or donors, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c986bbc2b915167058508e8de04f3550
http://docs.lib.purdue.edu/nanopub/720
http://docs.lib.purdue.edu/nanopub/720
When designing and studying circuits operating at cryogenic temperatures understanding local heating within the circuits is critical due to the temperature dependence of transistor and noise behavior. We have investigated local heating effects of a C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d32292bd17d5eac256f3ba0d11b148fb
Autor:
James E. Levy, Ralph W. Young, H. L. Stalford, E. P. Nordberg, Carlos Borrás Pinilla, Malcolm S. Carroll
Quantum dot (QD) lay-outs are becoming more complex as the technology is being applied to more complex multi-QD structures. This increase in complexity requires improved capacitance modeling both for design and accurate interpretation of QD propertie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::058bca7578a639c3afcc4885e3064e63
http://arxiv.org/abs/0911.3670
http://arxiv.org/abs/0911.3670
Autor:
Andrew J. Landahl, Anand Ganti, Robert D. Carr, Cynthia A. Phillips, James E. Levy, Thomas M. Gurrieri, Malcolm S. Carroll, Benjamin R. Hamlet
Publikováno v:
SPAA
We present and analyze an architecture for a logical qubit memory that is tolerant of faults in the processing of silicon double quantum dot (DQD) qubits. A highlight of our analysis is an in-depth consideration of the constraints faced when integrat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::445cc80695e52b0d58e08e2cb1fdfef8
https://doi.org/10.1145/1583991.1584039
https://doi.org/10.1145/1583991.1584039
Publikováno v:
2008 8th IEEE Conference on Nanotechnology.
Novel single electron transistor (SET) read-out circuit designs are described. The circuits use a silicon SET interfaced to a CMOS voltage mode or current mode comparator to obtain a digital read-out of the state of the qubit. The design assumes stan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22cfcedc15eeac7689d77a946cbeda2f
https://doi.org/10.1109/nano.2008.183
https://doi.org/10.1109/nano.2008.183