Zobrazeno 1 - 10
of 20
pro vyhledávání: '"James E. Lamb"'
Publikováno v:
ECS Transactions. 34:243-248
Here we examine photolithography methodologies to improve the efficiency of foundry and ASIC manufactures that have many part numbers with relatively low run volumes. In such cases, a fab must accommodate a large variety of device layers, topography
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::087f3bb0c734f15aec28cd7191b86b0a
https://doi.org/10.1149/1.3567588
https://doi.org/10.1149/1.3567588
Autor:
Mathew Boeser, Stephen Gibbons, John Bledsoe, Kathryn. Kremer, Kay Mangelson, Dan Janzen, Yongqing Jiang, James E. Lamb
Publikováno v:
25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014).
This work focuses on the development of electronics-grade carbon nanotube (CNT) formulations for commercialization of CNT-based memory devices. Preparing and providing these critical materials is key to empowering innovation and tapping the potential
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d99017a46ce29f0e6cd640cd80a335e
https://doi.org/10.1109/asmc.2014.6847008
https://doi.org/10.1109/asmc.2014.6847008
Autor:
James E. Lamb, Marriana Nelson, Vijaya Kayastha, Wu-Sheng Shih, Jacqueline Garrison, Christopher Landorf, John Bledsoe
Publikováno v:
MRS Proceedings. 1505
As produced, raw carbon nanotubes are not soluble in many solvents necessary for printing applications. Standard methods for circumventing this problem involve sidewall functionalization and surfactants. Sidewall functionalization invariably destroys
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1010bb96e5bbfd8fbc6086d7f0dc47f
https://doi.org/10.1557/opl.2013.482
https://doi.org/10.1557/opl.2013.482
Publikováno v:
SPIE Proceedings.
As the critical dimensions for the feature sizes shrink, the thickness of the photoresist layer decreases to enable patterning without collapse of the photoresist structure. Simultaneously, the use of an antireflective coating underneath the photores
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::568197690817c567187b82149a17a28e
https://doi.org/10.1117/12.436916
https://doi.org/10.1117/12.436916
Autor:
James E. Lamb, Xie Shao, Sean Trautman, John Sullivan, Satoshi Takei, Gu Xu, Jackie Backus, Ken-Ichi Mizusawa, Hiroyoshi Fukuro, Yasuhisa Sone, James B. Claypool, Xiaoming Wu, Yubao Wang
Publikováno v:
SPIE Proceedings.
Among the variety of dual damascene (DD) processes, the via- first approach has drawn much attention because of its reduced process steps and improved photolithography process window. The via-first process requires a layer of via-fill material to be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b8b819c8fa8669dace206d62e44b92f
https://doi.org/10.1117/12.436917
https://doi.org/10.1117/12.436917
Autor:
James E. Lamb, Lars Voelkel, Alice F. Martin, Francis G. Goodwin, Marlene Strobl, William R. Roberts, Axel Feicke, Sean Trautman, Paul Williams
Publikováno v:
Microlithographic Techniques in Integrated Circuit Fabrication II.
The work outlines a solution to the challenge of integrating a planarizing BARC into the via first dual damascene manufacturing process. We report the initial problems encountered in attempting the planarizing process and the resulting investigation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72a28b51e7fe0a38db2f4a2388cabcab
https://doi.org/10.1117/12.404853
https://doi.org/10.1117/12.404853
Autor:
Shreeram V. Deshpande, William J. Simmons, Joe Johnson, James E. Lamb, Nickolas L. Brakensiek, Xiaoming Wu, Xie Shao, Gu Xu
Publikováno v:
SPIE Proceedings.
Dual Damascene (DD) process has been implemented in manufacturing semiconductor devices with smaller feature sizes (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66cb1c02d9905ac9f786d1c17f3c55d5
https://doi.org/10.1117/12.386539
https://doi.org/10.1117/12.386539
Publikováno v:
SPIE Proceedings.
A fast-etching broad band bottom anti-reflective coating (BARC) for photoresist applications at the wavelength of 365nm, 248nm and 193nm was developed. The new BARC formulated in safe solvents such as ethyl lactate and PGME exhibits wide spin bowl co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0696396d3c1cec45d5365c4aa566834c
https://doi.org/10.1117/12.350877
https://doi.org/10.1117/12.350877
Autor:
James E. Lamb, Vandana Krishnamurthy, Yasuhisa Sone, Jim D. Meador, James B. Claypool, Hitoshi Suzuki, Gu Xu, Douglas J. Guerrero
Publikováno v:
SPIE Proceedings.
A new bottom antireflective coating (BARC) for 248 nm lithography is described. The new coating has an optical density of approximately 10/micrometers (k equals 0.41 and n equals 1.482) and plasma etches at rates higher than that of DUV resists depen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aac82de797898b3e4ba96813d339436d
https://doi.org/10.1117/12.312412
https://doi.org/10.1117/12.312412
Autor:
Paul Richardson, Patrick Jaenen, Johannes van Wingerden, Maaike Op de Beeck, Christie Delvaux, Geert Vandenberghe, Fenghong Zhang, Ilse Van Puyenbroeck, James E. Lamb, Kurt G. Ronse, Johan B. C. van der Hilst
Publikováno v:
SPIE Proceedings.
This paper reports on an optimization methodology for BARC/resist processes in order to obtain best CD-control on various substrate topographies. A selection of resist and BARC materials is studied by means of simulations and experiments. Two BARC pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5122256fbebfd4e0a147c2cb72dcdd62
https://doi.org/10.1117/12.310762
https://doi.org/10.1117/12.310762