Zobrazeno 1 - 10
of 13
pro vyhledávání: '"James E. Huffman"'
Autor:
S. N. Raines, Dan M. Watson, James E. Huffman, Timothy N. Krabach, Shobita Satyapal, Matthew T. Guptill
Publikováno v:
Journal of Applied Physics. 74:4199-4206
We have fabricated and characterized six-element monolithic arrays of Ge:Ga blocked-impurity-band detectors, with threshold wavelength 220 microns, peak quantum efficiency 14 percent, detective quantum efficiency 9 percent, dark current 300 e(-)/s, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fc4cacaea695dd3c6f2f177032fd41a
https://doi.org/10.1063/1.354424
https://doi.org/10.1063/1.354424
Autor:
James E. Huffman, Nancy L. Casey
Publikováno v:
Journal of Crystal Growth. 129:525-531
The intent of this article is to provide methods to prepare Ge and Ge: Ga homoepitaxy with residual group III and V impurity concentrations below 1013 cm-3. Methods for growing high purity Ge and Ge: Ga epitaxy have not been previously established. H
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ff0c39203ff3cc74e399529687f0cf5
https://doi.org/10.1016/0022-0248(93)90486-g
https://doi.org/10.1016/0022-0248(93)90486-g
Publikováno v:
Journal of Crystal Growth. 109:162-166
Ultra-high purity silicon with high concentrations of interstitial oxygen has been prepared using the float-zone (FZ) technique. In this material, interstitial oxygen concentrations [O]∼ 9×1017 cm-3 have been achieved while maintaining good crysta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86d47bb4d40caf9d72a5224555c51ec4
https://doi.org/10.1016/0022-0248(91)90173-3
https://doi.org/10.1016/0022-0248(91)90173-3
Publikováno v:
Journal of Applied Physics. 72:273-275
We discuss the characteristics of impurity band conduction detectors prepared from epitaxial Si:Sb. These detectors are sensitive to infrared light at wavelengths between 2.5 and 40 μm and outperform the current state‐of‐the‐art Ge:Be photocon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::917e4d3b8faeca35091f8d9c98201429
https://doi.org/10.1063/1.352127
https://doi.org/10.1063/1.352127
Publikováno v:
SPIE Proceedings.
Large-format, very-long-wavelength infrared (VLWIR) hybrid focal plane arrays (HFPAs) based on doped-silicon blocked-impurity-band (BIB) detectors have been developed and demonstrated for a variety of astronomy applications. An HFPA consists of a BIB
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f78f011c8db5e1808dbcddc89d7a72dd
https://doi.org/10.1117/12.211291
https://doi.org/10.1117/12.211291
Autor:
James E. Huffman
Publikováno v:
SPIE Proceedings.
We present the performance characteristics of two examples from a special class of photon detector, based on the blocked impurity band (BIB) concept. Recent results are presented on Si:Sb BIB detectors covering the 2 to 50 micrometers wavelength rang
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41ad2ba2ea5d9a6f0249d2deb50dd4ad
https://doi.org/10.1117/12.189241
https://doi.org/10.1117/12.189241
Publikováno v:
Physical review. B, Condensed matter. 49(23)
Photothermal ionization spectroscopy of germanium, doped in the impurity-band conduction range with gallium acceptors and with thermal oxygen donors, reveals that the donors and acceptors compensate each other at temperatures higher than about 5K, bu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e8c17d457fad68da5feb65880890b2f6
https://pubmed.ncbi.nlm.nih.gov/10010786
https://pubmed.ncbi.nlm.nih.gov/10010786
Autor:
Bruce Pirger, D. B. Reynolds, B. L. Halleck, David H. Seib, George E. Gull, Terry Herter, James E. Huffman, J. van Cleve
Publikováno v:
Infrared Astronomy with Arrays ISBN: 9789401044660
The first 128x128 Si:Sb blocked impurity band (BIB) detectors, manufactured by Rockwell International, are sensitive detectors from 10 to at least 40 µm. While further work is required to make these arrays suitable for the low backgrounds of space i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9e2d1d9cf2ee5417c64a4b8ff6faa2f
https://doi.org/10.1007/978-94-011-1070-9_111
https://doi.org/10.1007/978-94-011-1070-9_111
Autor:
James E. Huffman
Publikováno v:
Journal of Crystal Growth. 87:425-430
A new CVD growth chemistry has been developed for producing very pure and high crystalline-quality gallium-doped silicon epitaxy. Gallium trichloride, GaCl 3 , has been employed as an improved precursor to the currently accepted organometallic galliu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d2fd9d0f7d78c0bdf44942e31d58cce
https://doi.org/10.1016/0022-0248(88)90089-9
https://doi.org/10.1016/0022-0248(88)90089-9
Autor:
James E. Huffman, Dan M. Watson
Publikováno v:
Applied Physics Letters. 52:1602-1604
Ge:Ga blocked‐impurity‐band detectors having long‐wavelength thresholds of 190 μm and peak quantum efficiencies of 4% have been fabricated. This performance approaches that of state‐of‐the‐art discrete Ge:Ga photoconductors, with the add
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6820add4e1479d948ecfca467ab9dd96
https://doi.org/10.1063/1.99094
https://doi.org/10.1063/1.99094