Zobrazeno 1 - 10
of 343
pro vyhledávání: '"James D. Plummer"'
Publikováno v:
Advances in Materials Science and Engineering, Vol 2016 (2016)
InGaAs integration on Si substrates is an important topic for next generation electronic devices. Rapid melt growth (RMG) has the potential to grow defect-free lattice mismatched materials on Si at low cost. Most previous publications have focused on
Externí odkaz:
https://doaj.org/article/c85947bbee9d4aecbb852cb3a480c2c2
Publikováno v:
IEEE Journal of Emerging and Selected Topics in Power Electronics. 9:4082-4095
The recent development and commercialization of wide bandgap (WBG) power semiconductors, specifically gallium nitride (GaN) and silicon carbide (SiC), have driven the increase in switching frequency for soft-switching power converters, such as the Cl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd3117897ab978b8e15af3b53243f67d
https://doi.org/10.1109/jestpe.2020.3034345
https://doi.org/10.1109/jestpe.2020.3034345
Publikováno v:
IEEE Transactions on Electron Devices. 68:1819-1826
The origin of ${C}_{{\mathrm {oss}}}$ and the energy dissipation due to output capacitance can be roughly separated into two types: resistive loss and capacitive hysteresis loss. The resistive losses are due to the resistance of gallium nitride (GaN)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60483b669709ec7771ba7ab5c2b33cee
https://doi.org/10.1109/ted.2021.3063062
https://doi.org/10.1109/ted.2021.3063062
Autor:
Subhasish Mitra, Chenming Hu, H.-S. Philip Wong, Kerem Akarvardar, Tsu-Jae King-Liu, Sayeef Salahuddin, Jeffrey Bokor, James D. Plummer, Dimitri A. Antoniadis
Publikováno v:
Proceedings of the IEEE. 108:478-482
Since its inception, the semiconductor industry has used a physical dimension (the minimum gate length of a transistor) as a means to gauge continuous technology advancement. This metric is all but obsolete today. As a replacement, we propose a densi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67af365f826b76858e2cb2068fa40202
https://doi.org/10.1109/jproc.2020.2981715
https://doi.org/10.1109/jproc.2020.2981715
Publikováno v:
IEEE Transactions on Power Electronics. 34:6818-6833
This paper aims to provide a road map for selecting power devices in soft-switched, megahertz (MHz) frequency power converters. Minimizing ${C_{\text{OSS}}}$ losses, which occur when charging and discharging the parasitic output capacitor of power se
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7ac16b3d42eda12ec3fc941fa7d3e8e
https://doi.org/10.1109/tpel.2018.2874420
https://doi.org/10.1109/tpel.2018.2874420
Publikováno v:
IEEE Journal of Emerging and Selected Topics in Power Electronics. 7:865-878
In high-frequency (HF) and very-high-frequency (VHF) rectifiers, silicon carbide (SiC) Schottky diodes exhibit higher losses compared to what is reported in manufacturer-provided simulation models, with additional power loss stemming from energy diss
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::607913e9f04c6b8d1da50bf288523200
https://doi.org/10.1109/jestpe.2019.2904290
https://doi.org/10.1109/jestpe.2019.2904290
Publikováno v:
IEEE Transactions on Electron Devices. 66:578-584
Small-signal measurements of output capacitance ( ${C_{\textsf {OSS}}}$ ) are ubiquitous in power semiconductor datasheets and determine critical features of power converters. For silicon superjunction power MOSFETs (SJs), we report ${C_{\textsf {OSS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c72414424f7da51cdd646a370c0c587
https://doi.org/10.1109/ted.2018.2880952
https://doi.org/10.1109/ted.2018.2880952
Publikováno v:
2020 IEEE Energy Conversion Congress and Exposition (ECCE).
The origin of C oss and the energy dissipation due to output capacitance can be roughly separated into two types: resistive loss and capacitive hysteresis loss. The resistive losses are due to the resistance of GaN buffer layers and Si-substrate. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebd2d1cf865122c479b20a3c33def48d
https://doi.org/10.1109/ecce44975.2020.9235899
https://doi.org/10.1109/ecce44975.2020.9235899
Publikováno v:
Proceedings of the National Academy of Sciences. 115:685-689
Metal structures on insulators are essential components in advanced electronic and nanooptical systems. Their electronic and optical properties are closely tied to their crystal quality, due to the strong dependence of carrier transport and band stru
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9e4851f29a922049584ecb6a8f492ed2
https://doi.org/10.1073/pnas.1717882115
https://doi.org/10.1073/pnas.1717882115
Publikováno v:
2019 20th Workshop on Control and Modeling for Power Electronics (COMPEL).
In high-frequency, soft-switched power converters, off-state losses from resonantly charging and discharging the semiconductor output capacitor, or "C OSS losses", have severely limited the achievable performance. In this work, we investigate the ori
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::214c6514ba3e1c69b97e8578fd61c414
https://doi.org/10.1109/compel.2019.8769661
https://doi.org/10.1109/compel.2019.8769661