Zobrazeno 1 - 10
of 28
pro vyhledávání: '"James A. Schrock"'
Autor:
David H. Simon, Brad W. Hoff, James A. Schrock, Sterling Beeson, Wilkin Tang, Paul D. Lepell, Thomas Montoya, David M. French, Susan L. Heidger
Publikováno v:
IEEE Transactions on Plasma Science. 50:236-240
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a280c4b62db219d4e1fdf41f3e75a982
https://doi.org/10.1109/tps.2021.3138672
https://doi.org/10.1109/tps.2021.3138672
Autor:
James A. Schrock, Aderinto Ogunniyi, Stephen B. Bayne, Emily A. Hirsch, Shelby Lacouture, Heather O'Brien, Matthew Kim, J. Forbes, Argenis Bilbao
Publikováno v:
IEEE Transactions on Plasma Science. 48:3962-3967
Silicon carbide (SiC) is becoming a preferred technology of choice for power dense application compared with silicon (Si). A more comprehensive analysis of the long-term pulsed power reliability of SiC is necessary so that the technology can make the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22bf7ba3411c2cf7135a2cf996a87fb5
https://doi.org/10.1109/tps.2020.3030295
https://doi.org/10.1109/tps.2020.3030295
Autor:
Brad W. Hoff, Michael Geiler, John W. Luginsland, David Revelli, Jeremy W. McConaha, Hugh Pohle, Anton L. Geiler, P. David Lepell, James A. Schrock, Jason Cox, Casey Ottesen, Matthew A. Franzi, Hammad Irshad, Daniel Enderich, Zane Cohick, Thomas B. Montoya
Publikováno v:
The Review of scientific instruments. 92(6)
A system capable of exposing a flowing aerosol stream to short duration (2–4 ns), high-power RF waveforms is described. The system utilizes a C-band gyromagnetic nonlinear transmission line source having peak power outputs ranging as high as 80 kW
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::36e0dc9672e88596f962e60fff4fd327
https://pubmed.ncbi.nlm.nih.gov/34243497
https://pubmed.ncbi.nlm.nih.gov/34243497
Autor:
Robert Richter-Sand, Haynes Wood, D. H. Simon, Susan Heidger, James A. Schrock, Joshua Gilbrech, Brad W. Hoff, Paul Lepell
Publikováno v:
IEEE Transactions on Dielectrics and Electrical Insulation. 26:412-415
Spatially dispersive nonlinear transmission lines (NLTLs) have attracted interest as pulsed RF sources. The characteristics of these sources need to be further evaluated and understood to optimize their design. This paper presents the performance of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a2e2cffab789ef4789eb907d3c7697b
https://doi.org/10.1109/tdei.2019.007731
https://doi.org/10.1109/tdei.2019.007731
Publikováno v:
Microelectronics Reliability. 81:174-180
The high-voltage silicon carbide MOSFET is a state-of-the-art solution for increasing power density and efficiency in power electronics; nonetheless, a full-scope of failure modes during extreme operating condition has not been established. Past effo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20dcfc868e2217acf1a5436cebbc87a7
https://doi.org/10.1016/j.microrel.2017.12.011
https://doi.org/10.1016/j.microrel.2017.12.011
Autor:
James A. Schrock, Heather O'Brien, Sei-Hyung Ryu, Stephen B. Bayne, Miguel Hinojosa, Aderinto Ogunniyi, Aivars J. Lelis
Publikováno v:
Materials Science Forum. 897:575-578
The silicon carbide (SiC) “Super” gate turn-off thyristor (SGTO) is a viable device for high voltage and fast dI/dt switching applications. These devices are well suited for various pulsed power applications requiring high peak currents in the ki
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::804681c50c9637f5fffb43a6a25a0a0f
https://doi.org/10.4028/www.scientific.net/msf.897.575
https://doi.org/10.4028/www.scientific.net/msf.897.575
Autor:
Bejoy N. Pushpakaran, William B. Ray, Stephen B. Bayne, Emily A. Hirsch, James A. Schrock, Mitchell D. Kelley, Argenis Bilbao, S. Holt
Publikováno v:
IEEE Transactions on Power Electronics. 31:1816-1821
SiC MOSFETs are a leading option for increasing the power density of power electronics; however, for these devices to supersede the Si insulated-gate bipolar transistor, their characteristics have to be further understood. Two SiC vertically oriented
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98b90e6e7a75aac9b9732c2f2a04eaa4
https://doi.org/10.1109/tpel.2015.2464780
https://doi.org/10.1109/tpel.2015.2464780
Publikováno v:
2018 IEEE International Conference on Plasma Science (ICOPS).
The nonlinear transmission line electron beam driver at the Air Force Research Laboratory produces a frequency agile modulated annular electron beam [1]. A linear kinetic bunching analysis is performed based on transmission line theory [2]. This anal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e90751b845f605a23f5525611dcc0647
https://doi.org/10.1109/icops35962.2018.9575784
https://doi.org/10.1109/icops35962.2018.9575784
Autor:
Argenis Bilbao, Kevin Lawson, William B. Ray, James A. Schrock, S. Holt, Stephen B. Bayne, John W. Palmour, Lin Cheng, Charles Scozzie
Publikováno v:
IEEE Transactions on Power Electronics. 30:2891-2895
For SiC DMOSFETs to obtain widespread usage in power electronics their long-term operational ability to handle the stressful transient current and high temperatures common in power electronics needs to be further verified. To determine the long-term
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3cb3a9e8e225d7e9c0378b9f1d5890be
https://doi.org/10.1109/tpel.2014.2357013
https://doi.org/10.1109/tpel.2014.2357013
Autor:
Aderinto Ogunniyi, Heather O'Brien, Stephen B. Bayne, Emily A. Hirsch, James A. Schrock, Shelby Lacouture
Publikováno v:
2017 IEEE 21st International Conference on Pulsed Power (PPC).
To continually increase the voltage and current capabilities of power semiconductor devices, whether pushing older materials such as Si to its' intrinsic electrical limits or by employing newer substances like SiC or GaN, a thorough understanding of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::825304bf7a16b3d74deacd771d007de6
https://doi.org/10.1109/ppc.2017.8291191
https://doi.org/10.1109/ppc.2017.8291191