Zobrazeno 1 - 5
of 5
pro vyhledávání: '"James A. Kirchgessner"'
Publikováno v:
2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
Several performance improvements on a 180nm SiGe:C BiCMOS technology targeted for improved millimeter-wave performance are described. SiGe HBT performance metrics, including fT, fMAX, and CML gate delay are improved 20-30%. fT/fMAX of 260/350GHz are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9256caf623d76b97045bfa2a40a539c6
https://doi.org/10.1109/bctm.2014.6981292
https://doi.org/10.1109/bctm.2014.6981292
Autor:
R. Peterman, D. Hammock, Didier Salle, Ik-Sung Lim, D. Morgan, Vishal P. Trivedi, Jay P. John, J. Nivison, Pamela J. Welch, W.M. Huang, Olin L. Hartin, S. Stewart, S. Shams, Saverio Trotta, Hao Li, James A. Kirchgessner
Publikováno v:
2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
A millimeter-wave hyperabrupt-junction varactor (HAVAR) enabling 77GHz VCO/TX with 13–15GHz tuning range and better than −70dBc/Hz phase noise at 100kHz offset has been integrated in SiGe:C BiCMOS for automotive radar products. The HAVAR predomin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c545454ddb4a0e15660267b4f50b4ac5
https://doi.org/10.1109/bipol.2010.5667941
https://doi.org/10.1109/bipol.2010.5667941
Publikováno v:
2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium.
A millimeter-wave selective-epi, SiGe:C HBT is described, utilizing a novel, low-cost collector construction. A cutoff frequency (fT) of 200 GHz and a maximum oscillation frequency (fMAX) of 300 GHz is achieved using a self-aligned selective-epi base
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32a2c0a315b3608cafa6dadc47f94cb9
https://doi.org/10.1109/rfic.2007.380946
https://doi.org/10.1109/rfic.2007.380946
Autor:
Danny Jahn, Akbar Ghazinour, C. Trigas, Y. Yin, Hao Li, D. Morgan, B. Knappenberger, D. Scheitlin, James A. Kirchgessner, I. To, M. Huang, P. Welch, M. Tutt, Peter Wennekers, Ralf Reuter, J. Feige, S. Braithwaite, Jay P. John
Publikováno v:
2007 IEEE/MTT-S International Microwave Symposium.
Advancements in SiGe device development enable the realization of 76.5 GHz FMCW automotive long range radar systems using relatively low-cost silicon technology. This paper presents fully integrated receiver (RX) and transmitter (TX) circuits for wid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa36b1d4936498352365b2cd991ac58c
https://doi.org/10.1109/mwsym.2007.380434
https://doi.org/10.1109/mwsym.2007.380434
Autor:
Ralf Reuter, James A. Kirchgessner, Matthew W. Menner, Hao Li, Jay P. John, M. Dawdy, H. Rueda, J. Hildreth, D. Morgan, F. Chai
Publikováno v:
2006 Bipolar/BiCMOS Circuits and Technology Meeting.
The development of a selective-epi, SiGe:C HBT module for 77GHz automotive radar applications is described. A cutoff frequency (fT ) of 185GHz, in conjunction with a maximum oscillation frequency of 260GHz has been achieved through the implementation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e73400563bc0b3dd9006d079c2312bc
https://doi.org/10.1109/bipol.2006.311149
https://doi.org/10.1109/bipol.2006.311149