Initialization of Nanowire or Cluster Growth Critically Controlled by the Effective V/III Ratio at the Early Nucleation Stage

Autor: Chen Chen, Yanmeng Chu, Linjun Zhang, Haojun Lin, Wenzhang Fang, Zheyu Zhang, Chaofei Zha, Kejia Wang, Hui Yang, Xuezhe Yu, James A. Gott, Martin Aagesen, Zhiyuan Cheng, Suguo Huo, Huiyun Liu, Ana M. Sanchez, Yunyan Zhang

Publikováno v: Chen, C, Chu, Y, Zhang, L, Lin, H, Fang, W, Zhang, Z, Zha, C, Wang, K, Yang, H, Yu, X, Gott, J A, Aagesen, M, Cheng, Z, Huo, S, Liu, H, Sanchez, A M & Zhang, Y 2023, ' Initialization of Nanowire or Cluster Growth Critically Controlled by the Effective V/III Ratio at the Early Nucleation Stage ', Journal of Physical Chemistry Letters, vol. 14, no. 19, pp. 4433-4439 . https://doi.org/10.1021/acs.jpclett.3c00484

For self-catalyzed nanowires (NWs), reports on how the catalytic droplet initiates successful NW growth are still lacking, making it difficult to control the yield and often accompanying a high density of clusters. Here, we have performed a systemati

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2f05fd5104317e1ab99d18820a65162b
https://doi.org/10.1021/acs.jpclett.3c00484

Defect-Free Axially Stacked GaAs/GaAsP Nanowire Quantum Dots with Strong Carrier Confinement

Autor: Yunyan Zhang, Ana M. Sanchez, George Davis, Anton V. Velichko, Patrick Parkinson, H. Aruni Fonseka, James A. Gott, Huiyun Liu, Martin Aagesen, D. J. Mowbray

Publikováno v: Nano Letters
Zhang, Y, Velichko, A V, Fonseka, H A, Parkinson, P, Gott, J A, Davis, G, Aagesen, M, Sanchez, A M, Mowbray, D & Liu, H 2021, ' Defect-Free Axially Stacked GaAs/GaAsP Nanowire Quantum Dots with Strong Carrier Confinement ', Nano Letters, vol. 21, no. 13, pp. 5722-5729 . https://doi.org/10.1021/acs.nanolett.1c01461

Axially stacked quantum dots (QDs) in nanowires (NWs) have important applications in nanoscale quantum devices and lasers. However, there is lack of study of defect-free growth and structure optimization using the Au-free growth mode. We report a det

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ff884366fed946ebcbe0a99c7cbaab90
http://europepmc.org/articles/PMC8289304

Ferroelectric incommensurate spin crystals

Autor: Dorin, Rusu, Jonathan J P, Peters, Thomas P A, Hase, James A, Gott, Gareth A A, Nisbet, Jörg, Strempfer, Daniel, Haskel, Samuel D, Seddon, Richard, Beanland, Ana M, Sanchez, Marin, Alexe

Publikováno v: Nature. 602(7896)

Ferroics, especially ferromagnets, can form complex topological spin structures such as vortices

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::16ec27183d2f9c3a99035f50827388ad
https://pubmed.ncbi.nlm.nih.gov/35140385

GaAsP nanowires containing intentional and self-forming quantum dots

Autor: Richard Beanland, H. Aruni Fonseka, D. J. Mowbray, Huiyun Liu, George Davis, Anton V. Velichko, Yunyan Zhang, James A. Gott, T. Godde, Ana M. Sanchez

Publikováno v: Quantum Dots, Nanostructures, and Quantum Materials: Growth, Characterization, and Modeling XVII.

GaAsP nanowires (NWs) containing a range of different heterostructures are shown to be a highly promising system for the fabrication of efficient and novel ultra-small light emitters. NWs containing GaAs radial quantum wells (QWs) have emission with

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::38338c923ff4c0dcf54fd58f1398e898
https://doi.org/10.1117/12.2543747

Defects in Self-Catalysed III-V Nanowires

Autor: James A. Gott

This thesis presents an in-depth exploration of imperfections that can be found in self-catalysed III-V semiconductor nanowires. By utilising advanced electron microscopy techniques, the interface sharpness and defects at the atomic and macroscopic s