Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Jamal Ramdani"'
Autor:
J. Klatt, Todd Thibeault, Akshey Sehgal, Craig Printy, Scott Ruby, Jamal Ramdani, Hsin Hsiung Huang
Publikováno v:
Solid State Phenomena. :127-130
This work details the investigation of potential problems in Complimentary BiCMOS technology, especially PNP transistors arrays. Optical examination of the wafer revealed defects in the P Buried Layer (PBL) areas of the die. Electrical testing correl
Autor:
Jeffrey M. Finder, Jamal Ramdani, Ravindranath Droopad, Zhong Lin Wang, Ramamoorthy Ramesh, K. Eisenbeiser, Junling Wang, G. Y. Yang, Zhiyi Jimmy Yu
Publikováno v:
Journal of Materials Research. 17:204-213
Microstructure in the SrTiO3/Si system has been studied using high-resolution transmission electron microscopy and image simulations. SrTiO3 grows heteroepitaxially on Si with the orientation relationship given by (001)STO//(001)Si and [100]STO//[110
Autor:
Corey Overgaard, Zhiyi Jimmy Yu, William J. Ooms, Ravi Droopad, Jay Curless, K. Eisenbeiser, Jamal Ramdani, Jeffrey M. Finder, Lyndee L. Hilt, John L. Edwards
Publikováno v:
Materials Science and Engineering: B. 87:292-296
Thin films of perovskite-type oxide SrTiO 3 have been grown epitaxially on Si(001) substrates using molecular beam epitaxy. Using reflection high energy electron diffraction (RHEED) we have determined the optimum growth conditions for these type of o
Autor:
Jay Curless, B-Y Ngyuen, Ravi Droopad, Jamal Ramdani, Jeff Finder, Kurt Eisenbeiser, Jun Wang, B. Ooms, Vidya Kaushik, Zhiyi Yu, Lyndee L. Hilt, John L. Edwards, Corey Overgaard
Publikováno v:
Journal of Crystal Growth. :936-943
Using molecular beam epitaxy, thin films of perovskite-type oxide Sr x Ba 1-x TiO 3 (0 ≤ x ≤ 1) have been grown epitaxially on Si(001) substrates. Growth parameters were determined using reflection high energy electron diffraction (RHEED). Observ
Autor:
Scott Ruby, Akshey Sehgal, J. Klatt, Thanas Budri, Jamal Ramdani, Paul Allard, Scott Arsenault, Wibo van Noort, Albert Schnieders
Publikováno v:
Surface and Interface Analysis. 43:609-611
D & TOF-SIMS instruments are used in conjunction with other analytical techniques in order to identify the sources of metallic contamination and particle-type defects. In this paper D & ToF-SIMS are used to identify metals in the P-type buried layer
Autor:
Charles A. Peterson, Jamal Ramdani, Xiaoming Hu, Jay Curless, William J. Ooms, Ravi Droopad, Zhiyi Jimmy Yu, Xiaowei Yao, Junling Wang, Daniel S. Marshall, Dror Sarid, J. A. Hallmark
Publikováno v:
Surface Science. 457:L391-L396
The initial stages of barium adsorption on Si(100)-(2×1) at room temperature has been studied by ultrahigh vacuum scanning tunneling microscopy (STM) under both positive and negative sample-bias imaging conditions. Two distinct adsorption sites have
Autor:
Jamal Ramdani, Vidya Kaushik, Jay Curless, William J. Ooms, Jeffrey M. Finder, Corey Overgaard, S Pietambaram, Zhiyi Jimmy Yu, J. A. Hallmark, K. Eisenbeiser, Ravindranath Droopad, Prasad V. Alluri
Publikováno v:
Applied Surface Science. :127-133
Single-crystal SrTiO3 has been grown on Si(100) using molecular beam epitaxy (MBE). The growth conditions, especially at the initial stage of nucleation, have a great impact on the SrTiO3/Si interface. A regrowth of an amorphous interfacial layer as
Autor:
Jamal Ramdani, Jeff Finder, Jun Wang, Jay Curless, Corey Overgaard, Ravi Droopad, B. Ooms, J. A. Hallmark, Zhiyi Yu, Daniel S. Marshall
Publikováno v:
Integrated Ferroelectrics. 27:41-50
Recently, we have grown epitaxial BaTiO3 films directly on a Si (001) substrate using molecular beam epitaxy (MBE). The films have been characterized both physically (RHEED, XRD, AFM, SE) and electrically (CV & IV). The films show streaky RHEED patte
Autor:
Todd Brintlinger, Haimei Zheng, K. Eisenbeiser, Z. Yu, Michael S. Fuhrer, B. M. Kim, Enrique Cobas, Jamal Ramdani, Ravindranath Droopad
Publikováno v:
Applied Physics Letters. 84:1946-1948
Single-walled carbon nanotubes (SWNTs) have been grown via chemical vapor deposition on high-kappa dielectric SrTiO3/Si substrates, and high-performance semiconducting SWNT field-effect transistors have been fabricated using the thin SrTiO3 as gate d
Autor:
Agham-Bayan S Posadas, Alexander Kvit, Jamal Ramdani, Alexander A. Demkov, Chandrima Mitra, Hosung Seo
Publikováno v:
Physical Review B. 86
Using density functional theory (DFT), scanning transmission electron microscopy (STEM), and electron energy loss spectroscopy (EELS), we study the interface structure and electronic properties of the anatase-TiO${}_{2}$/SrTiO${}_{3}$(001) heterostru