Zobrazeno 1 - 10
of 125
pro vyhledávání: '"Jamal Aziz"'
Autor:
Shania Rehman, Muhammad Asghar Khan, Honggyun Kim, Harshada Patil, Jamal Aziz, Kalyani D. Kadam, Malik Abdul Rehman, Muhammad Rabeel, Aize Hao, Karim Khan, Sungho Kim, Jonghwa Eom, Deok‐kee Kim, Muhammad Farooq Khan
Publikováno v:
Advanced Science, Vol 10, Iss 17, Pp n/a-n/a (2023)
Abstract To avoid the complexity of the circuit for in‐memory computing, simultaneous execution of multiple logic gates (OR, AND, NOR, and NAND) and memory behavior are demonstrated in a single device of oxygen plasma‐treated gallium selenide (Ga
Externí odkaz:
https://doaj.org/article/c90e3b81707845f38e9e0e7adf91ad2e
Autor:
Honggyun Kim, Vijay D. Chavan, Jamal Aziz, Byoungsu Ko, Jae-Sung Lee, Junsuk Rho, Tukaram D. Dongale, Kyeong-Keun Choi, Deok-Kee Kim
Publikováno v:
IEEE Access, Vol 10, Pp 68724-68730 (2022)
The surface passivation of a CMOS image sensor (CIS) is highly beneficial for the overall improvement of a device performance. We employed the thermal atomic layer deposition (T-ALD) and plasma enhanced (PE-ALD) techniques for the deposition of 20 nm
Externí odkaz:
https://doaj.org/article/fb50d026caf04423a1a60a323b801b09
Autor:
Jamal Aziz, Honggyun Kim, Shania Rehman, Muhammad Farooq Khan, Kalyani D. Kadam, Harshada Patil, Sikandar Aftab, Ghulam Dastgeer, Deok‐kee Kim
Publikováno v:
Advanced Electronic Materials, Vol 8, Iss 4, Pp n/a-n/a (2022)
Abstract Transparent and flexible diodes could be useful for future transparent electronics. Here such diodes are discussed with electrical breakdown (EBR) comprises of W/ZnO/ITO structure on the polyethylene terephthalate substrates. The three‐lay
Externí odkaz:
https://doaj.org/article/ddfc6582ae2e4f2085cecb5784476210
Autor:
Ghulam Dastgeer, Amir Muhammad Afzal, Jamal Aziz, Sajjad Hussain, Syed Hassan Abbas Jaffery, Deok-kee Kim, Muhammad Imran, Mohammed Ali Assiri
Publikováno v:
Materials, Vol 14, Iss 24, p 7535 (2021)
Two-terminal, non-volatile memory devices are the fundamental building blocks of memory-storage devices to store the required information, but their lack of flexibility limits their potential for biological applications. After the discovery of two-di
Externí odkaz:
https://doaj.org/article/926e512f49564609b69d832fdb6c218d
Autor:
Harshada Patil, Honggyun Kim, Shania Rehman, Kalyani D. Kadam, Jamal Aziz, Muhammad Farooq Khan, Deok-kee Kim
Publikováno v:
Nanomaterials, Vol 11, Iss 2, p 359 (2021)
Organic nonvolatile memory devices have a vital role for the next generation of electrical memory units, due to their large scalability and low-cost fabrication techniques. Here, we show bipolar resistive switching based on an Ag/ZnO/P3HT-PCBM/ITO de
Externí odkaz:
https://doaj.org/article/5ef6692035124ff7a592ac3bf416b872
Publikováno v:
Nanomaterials, Vol 10, Iss 11, p 2164 (2020)
In this study, the dominant role of the top electrode is presented for Nb2O5-based devices to demonstrate either the resistive switching or threshold characteristics. These Nb2O5-based devices may exhibit different characteristics depending on the se
Externí odkaz:
https://doaj.org/article/6453395b11ff4c9a86654c3de8b6affb
Autor:
Liu, Ning, Babazono, Akira, Jamal, Aziz, Yoshida, Shinichiro, Yamao, Reiko, Ishihara, Reiko, Matsuda, Shinya, Li, Yunfei
Publikováno v:
In Public Health February 2024 227:63-69
Autor:
Li, Yunfei, Babazono, Akira, Jamal, Aziz, Liu, Ning, Fujita, Takako, Zhao, Rui, Maeno, Yukari, Su, Ya, Liang, Lifan, Yao, Lan
Publikováno v:
In Social Science & Medicine December 2022 314
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Akademický článek
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