Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Jakub Piastek"'
Publikováno v:
Journal of Materials Science. 57:1923-1935
Autor:
Jakub Piastek, Jindřich Mach, Stanislav Bardy, Zoltán Édes, Miroslav Bartošík, Jaroslav Maniš, Vojtěch Čalkovský, Martin Konečný, Jiří Spousta, Tomáš Šikola
Publikováno v:
J. Phys. Chem. C
Surface enhanced Raman spectroscopy (SERS) is a perspective non-destructive analytic technique enabling detection of individual nanoobjects, even single-molecules. . In the paper, we have studied the morphology of Ga islands deposited on CVD graphene
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f53668005ade89bd2fe498dee9acbbff
http://arxiv.org/abs/2201.04377
http://arxiv.org/abs/2201.04377
Autor:
Klaus Ensslin, Vojtěch Švarc, Jindřich Mach, Martin Konečný, David Nezval, Tomáš Šikola, Miroslav Bartošík, Jakub Piastek
Publikováno v:
ACS Sensors, 5 (9)
ACS Sensors
ACS Sensors
Hysteresis is a problem in field-effect transistors (FETs) often caused by defects and charge traps inside a gate isolating (e.g., SiO2) layer. This work shows that graphene-based FETs also exhibit hysteresis due to water physisorbed on top of graphe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5aba15cdf29478e908aabb0311157456
Autor:
Stanislav Voborný, Tomáš Šamořil, Jindřich Mach, Jaroslav Maniš, Miroslav Bartošík, Tomáš Šikola, Martin Konečný, Vojtěch Čalkovský, Jana Damková, Jakub Piastek
Publikováno v:
Applied Surface Science
We report on a hybrid method for fabrication of arrays of GaN nanocrystals by low-temperature UHV selective growth on pre-patterned silicon substrates covered by native oxide. Patterning of the substrates was performed by using a gallium focused ion
Autor:
Jindřich Mach, David Nezval, Miroslav Bartošík, Pavel Procházka, Martin Konečný, Jakub Piastek, Tomáš Šikola, Vojtěch Švarc, Aleš Cahlík
Publikováno v:
ACS applied materialsinterfaces. 10(14)
The article shows how the dynamic mapping of surface potential (SP) measured by Kelvin probe force microscopy (KPFM) in combination with calculation by a diffusion-like equation and the theory based on the Brunauer-Emmett-Teller (BET) model of water
Autor:
David Nezval, Pavel Procházka, Lukáš Kormoš, Tomáš Šikola, Jindřich Mach, Miroslav Bartošík, Vojtěch Švarc, Martin Konečný, Jakub Piastek, J Hulva
Publikováno v:
Nanotechnology. 28(41)
In this work we present the effect of low dose gallium (Ga) deposition (
Autor:
Jindřich Mach, Jakub Piastek, Jaroslav Maniš, Vojtěch Čalkovský, Tomáš Šamořil, Jana Damková, Miroslav Bartošík, Stanislav Voborný, Martin Konečný, Tomáš Šikola
We report on a hybrid method for fabrication of arrays of GaN nanocrystals by low-temperature UHV selective growth on pre-patterned silicon substrates covered by native oxide. Patterning of the substrates was performed by using a gallium focused ion
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56be0ac2c1dd19e52f4aeffe810bbfaf
Autor:
Jindřich Mach, Jakub Piastek, Jaroslav Maniš, Vojtěch Čalkovský, Tomáš Šamořil, Jana Damková, Miroslav Bartošík, Stanislav Voborný, Martin Konečný, Tomáš Šikola
We report on a hybrid method for fabrication of arrays of GaN nanocrystals by low-temperature UHV selective growth on pre-patterned silicon substrates covered by native oxide. Patterning of the substrates was performed by using a gallium focused ion
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::039d8825987a7573e94fcb1a84ebca39