Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Jakob Kriz"'
Autor:
Gabriele Denk, Ursula Frede, Irene Gratzer, Katharina Kittinger-Sereinig, Katja Kolmorgen, Jakob Kriz
Publikováno v:
Zeitschrift für Psychodrama und Soziometrie. 21:305-321
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e97f1879018060bea2ccc0562cb7c14
https://doi.org/10.1007/s11620-022-00685-6
https://doi.org/10.1007/s11620-022-00685-6
In this work three elements were investigated as Cu alloys for the self-forming barrier approach: Mn, Ti and Zr. Firstly pure alloy films were prepared in the concentration range from 3 to 9at.%. The thin films were analysed with four point probe, X-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6526651165d70af7aed83c545de3edab
https://publica.fraunhofer.de/handle/publica/243774
https://publica.fraunhofer.de/handle/publica/243774
Autor:
Markus Czekalla, S. Schulte, S. Huth, A. Thamm, A. Pohl, C. Angelkort, S. Wallace, D. Meinhold, Jakob Kriz
Publikováno v:
Microelectronic Engineering. 85:2128-2132
An overview of different dual damascene approaches is given. Three approaches - trench first, trench first with metal hardmask, and via first - are described in detail. Trench first is the easiest approach but due to its limitation only suitable for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::432959d9c51467556adf8d501b5d149f
https://doi.org/10.1016/j.mee.2008.05.034
https://doi.org/10.1016/j.mee.2008.05.034
Publikováno v:
Microelectronic Engineering. 85:2123-2127
A systematic study of various processes and their impact on intrinsic reliability has been performed on Cu dual damascene interconnects. The most significant improvement for intrinsic reliability is the 'break-through' liner. A strong impact on stres
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8f40d86f58555e28b0028ce956590fa
https://doi.org/10.1016/j.mee.2008.06.002
https://doi.org/10.1016/j.mee.2008.06.002
Publikováno v:
2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM).
In this work, we present the recent work on self-forming barriers. Focus on investigation laid on the barrier formation and its stability against copper diffusion. The investigated alloys were Cu(Mn), Cu(Ti) and Cu(Zr) respectively. It can be shown t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56b3c20b90edf35d201b5c80a4fdfa92
https://doi.org/10.1109/iitc-mam.2015.7325640
https://doi.org/10.1109/iitc-mam.2015.7325640
Autor:
Jakob Kriz, C. Kubasch, Johann W. Bartha, N. Urbansky, B. Schwiegel, H. Wojcik, C. Klaus, C. Wenzel, J. Hahn
Publikováno v:
IEEE International Interconnect Technology Conference.
As a result of the continuous miniaturization of integrated circuits, width and depth of Cu interconnects are reduced for every new technology node, implying that also the Ta or TaN Cu diffusion barrier and Cu seed layer must be thinned in order to a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efea7ccaf919448505babe3b20be1122
https://doi.org/10.1109/iitc.2014.6831854
https://doi.org/10.1109/iitc.2014.6831854
Autor:
S. Wallace, P. Oesinghaus, G. Antonin, Jakob Kriz, Sabine Penka, Markus Czekalla, Armin Fischer
Publikováno v:
2011 IEEE International Interconnect Technology Conference.
Extrinsic failure behavior of vias and dielectrics in the backend of line (BEOL) has been studied using dedicated test structures on a large scale. Via fails after (unbiased) stress were detected utilizing a test set-up and program that allows the re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d021cb92afa6ef9ec5d91f07520a7665
https://doi.org/10.1109/iitc.2011.5940266
https://doi.org/10.1109/iitc.2011.5940266
Autor:
A.E. Zitzelsberger, A. von Glasow, C. Robin, H.-P. Sperlich, Franz Ungar, P. Raffin, Armin Fischer, Jakob Kriz, Martina Hommel, D. Bunel, O. Heitzsch, G. Friese, A. Hausmann, Sabine Penka
Publikováno v:
2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual..
The influence of the SiN cap-layer deposition process including different pre-clean treatments on the electromigration (EM) and stressvoiding (SV) behavior of copper dual damascene metallizations has been studied. A remarkable trade-off between the E
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4dcd3d566d0d4e99ee803b542840d367
https://doi.org/10.1109/relphy.2003.1197735
https://doi.org/10.1109/relphy.2003.1197735