Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Jakob Höpfner"'
Autor:
Jakob Höpfner, Priti Gupta, Martin Guttmann, Jan Ruschel, Johannes Glaab, Tim Kolbe, Jens Rass, Arne Knauer, Christoph Stölmacker, Sven Einfeldt, Tim Wernicke, Markus Weyers, Michael Kneissl
Publikováno v:
Applied Physics Letters. 122:151104
The electroluminescence of UVB light-emitting diodes emitting at 310 nm before and after 1000 h of operation is studied in the temperature range from 20 to 340 K. Before operation, the external quantum efficiency (EQE) at 10 mA gradually increases wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9dd4e84a566c7d73fe04f96c6057b60
https://doi.org/10.1063/5.0139200
https://doi.org/10.1063/5.0139200
Autor:
Friedhard Romer, Gregor Hofmann, Jakob Hopfner, Marcel Schilling, Anton Muhin, Tim Wernicke, Michael Kneissl, Bernd Witzigmann
Publikováno v:
IEEE Photonics Journal, Vol 16, Iss 1, Pp 1-6 (2024)
Aluminium Gallium Nitride (AlGaN) based light emitting diodes (LED) are the enabling technology for compact emitters of deep ultraviolet (DUV) radiation and are in high demand for environmental and medical applications. The efficiency of recent DUV L
Externí odkaz:
https://doaj.org/article/d1917a71b47149ce8fee6f669ff2f7c9
Autor:
Christoph Reich, Pascal Röder, Martin Guttmann, Luca Sulmoni, Christian Kuhn, Tim Wernicke, Michael Kneissl, Jakob Höpfner
Publikováno v:
Semiconductor Science and Technology. 34:085007
The height of the barrier around the AlGaN quantum well has a strong impact on the external quantum efficiency of UVC light emitting diodes (LEDs) as it affects the carrier confinement, the polarization fields, and the injection efficiency as well as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5118713edfe5fcff7603c79bf0d9a789
https://doi.org/10.1088/1361-6641/ab2c1a
https://doi.org/10.1088/1361-6641/ab2c1a
Autor:
Martin Guttmann, Jakob Höpfner, Christoph Reich, Luca Sulmoni, Christian Kuhn, Pascal Röder, Tim Wernicke, Michael Kneissl
Publikováno v:
Semiconductor Science & Technology; Aug2019, Vol. 34 Issue 8, p1-1, 1p