Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Jakob Bombsch"'
Autor:
Donald Valenta, Hasan Arif Yetkin, Tim Kodalle, Jakob Bombsch, Raul Garcia‐Diez, Claudia Hartmann, Shigenori Ueda, Roberto Félix, Johannes Frisch, Lucas Bodenstein‐Dresler, Regan G. Wilks, Christian A. Kaufmann, Marcus Bär
Publikováno v:
Advanced Materials Interfaces, Vol 11, Iss 13, Pp n/a-n/a (2024)
Abstract Sputter‐deposited GaOx (i.e., oxygen‐deficient gallium oxide) films are evaluated as a potential replacement for the standard CdS buffer layers in Cu(In,Ga)Se2 (CIGSe) based thin‐film photovoltaics. The energy level alignment at the Ga
Externí odkaz:
https://doaj.org/article/e86b7412d85a4050acde412c67d4516c
Autor:
Jakob Bombsch, Enrico Avancini, Romain Carron, Evelyn Handick, Raul Garcia-Diez, Claudia Hartmann, Roberto Félix, Daniel Abou-Ras, Shigenori Ueda, Regan G. Wilks, Marcus Bär
Publikováno v:
Advanced Energy & Sustainability Research, Vol 2, Iss 11, Pp n/a-n/a (2021)
Cu(In,Ga)Se2 (CIGSe) is a promising absorber material for thin‐film photovoltaic devices. A key procedure to achieve high efficiencies is the application of alkali fluoride postdeposition treatments (PDT) of the CIGSe surface. While the effects of
Externí odkaz:
https://doaj.org/article/df08cea5475144f5a928b248133194ed
Autor:
Jakob Bombsch, Oliver Supplie, P. Jiříček, Thomas Hannappel, Claudia Hartmann, Agnieszka Paszuk, Regan G. Wilks, Shigenori Ueda, Jan Philipp Stoeckmann, Ivan Gordeev, Marcus Bär, Oleksandr Romanyuk, J. Houdkova, I. Bartoš, Raul Garcia-Diez, Peter Kleinschmidt
Publikováno v:
Surface and Interface Analysis. 52:933-938
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a08740b661e9a2996055d0f301fbe7d
https://doi.org/10.1002/sia.6829
https://doi.org/10.1002/sia.6829
Autor:
Mohit, Sood, Jakob, Bombsch, Alberto, Lomuscio, Sudhanshu, Shukla, Claudia, Hartmann, Johannes, Frisch, Wolfgang, Bremsteller, Shigenori, Ueda, Regan G, Wilks, Marcus, Bär, Susanne, Siebentritt
Publikováno v:
ACS applied materialsinterfaces. 14(7)
Copper indium disulfide (CuInS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::ac0d5dd9991a568f873ee730a7ac89ec
https://pubmed.ncbi.nlm.nih.gov/35134299
https://pubmed.ncbi.nlm.nih.gov/35134299
Autor:
Mohit Sood, Jakob Bombsch, Alberto Lomuscio, Sudhanshu Shukla, Claudia Hartmann, Johannes Frisch, Wolfgang Bremsteller, Shigenori Ueda, Regan G. Wilks, Marcus Bär, Susanne Siebentritt
Copper indium disulfide CuInS2 grown under Cu rich conditions exhibits high optical quality but suffers predominantly from charge carrier interface recombination, resulting in poor solar cell performance. An unfavorable cliff like conduction band ali
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0c8bf2cb7e82401297eb02e1bbd08e27
http://www.helmholtz-berlin.de/pubbin/oai_publication?VT=1&ID=108485
http://www.helmholtz-berlin.de/pubbin/oai_publication?VT=1&ID=108485
Autor:
Jakob, Bombsch, Enrico, Avancini, Romain, Carron, Evelyn, Handick, Raul, Garcia-Diez, Claudia, Hartmann, Roberto, Félix, Shigenori, Ueda, Regan G, Wilks, Marcus, Bär
Publikováno v:
ACS applied materialsinterfaces. 12(31)
The underlying beneficial mechanism of heavy alkali postdeposition treatment (PDT) of Cu(In,Ga)Se
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::29192fcaf9c593a1f7150f49c11cc83f
https://pubmed.ncbi.nlm.nih.gov/32633119
https://pubmed.ncbi.nlm.nih.gov/32633119
Autor:
Roberto Félix, Sébastien Duguay, Enrico Avancini, Mohit Raghuwanshi, Martti J. Puska, Romain Carron, Milos Nesladek, Jakob Bombsch, Evelyn Handick, Nicoleta Nicoara, Celia Castro, Stephan Buecheler, Emilie Bourgeois, Ville Havu, Thomas Paul Weiss, Max Hilaire Wolter, Shigenori Ueda, Philip Jackson, Hannu-Pekka Komsa, Marcus Bär, Maria Malitckaya, Susanne Siebentritt, Giovanna Sozzi, Philippe Pareige, Dimitrios Hariskos, Arantxa Vilalta-Clemente, Thomas Kunze, Sascha Sadewasser, Roberto Menozzi, Florian Werner, Ayodhya N. Tiwari, Wolfram Witte, Regan G. Wilks
Publikováno v:
Advanced Energy Materials
Advanced Energy Materials, Wiley-VCH Verlag, 2020, pp.1903752. ⟨10.1002/aenm.201903752⟩
Advanced Energy Materials, 2020, pp.1903752. ⟨10.1002/aenm.201903752⟩
Article
Advanced Energy Materials, Wiley-VCH Verlag, 2020, pp.1903752. ⟨10.1002/aenm.201903752⟩
Advanced Energy Materials, 2020, pp.1903752. ⟨10.1002/aenm.201903752⟩
Article
Chalcopyrite solar cells achieve efficiencies above 23%. The latest improvements are due to post-deposition treatments (PDT) with heavy alkalis. This study provides a comprehensive description of the effect of PDT on the chemical and electronic struc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9cf0c26617c2f6a8105d2377b09345c9
https://hal-normandie-univ.archives-ouvertes.fr/hal-02461969
https://hal-normandie-univ.archives-ouvertes.fr/hal-02461969
Autor:
Roberto Félix, Manali Nandy, Jakob Bombsch, Thomas Hannappel, Oleksandr Romanyuk, Shigenori Ueda, Claudia Hartmann, Ivan Gordeev, P. Jiříček, Marcus Bär, Regan G. Wilks, Agnieszka Paszuk, P. Machek, J. Houdkova, I. Bartoš, Peter Kleinschmidt
Publikováno v:
Applied Surface Science. 565:150514
GaP is a preferred candidate for the transition between Si and heterogeneous III-V epilayers as it is nearly lattice-matched to Si. Here, we scrutinize the atomic structure and electronic properties of GaP/Si(0 0 1) heterointerfaces utilizing hard X-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcde5a04804dec53e7e6ffea3cc3c830
https://doi.org/10.1016/j.apsusc.2021.150514
https://doi.org/10.1016/j.apsusc.2021.150514
Autor:
Evelyn Handick, Jakob Bombsch, Raul Garcia-Diez, Marcus Bär, Daniel Abou-Ras, Roberto Félix, Claudia Hartmann, Romain Carron, Shigenori Ueda, Enrico Avancini, Regan G. Wilks
Publikováno v:
Advanced Energy & Sustainability Research, Vol 2, Iss 11, Pp n/a-n/a (2021)
Advanced Energy and Sustainability Research
Advanced Energy and Sustainability Research
Cu In,Ga Se2 CIGSe is a promising absorber material for thin film photovoltaic devices. A key procedure to achieve high efficiencies is the application of alkali fluoride postdeposition treatments PDT of the CIGSe surface. While the effects of the PD
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b5b51599da0b96593fb335af0a03dd8e
https://doi.org/10.1002/aesr.202100101
https://doi.org/10.1002/aesr.202100101
Autor:
Wenlan Liu, Sebastian Beck, Andreas Köhn, Robert Lovrincic, Shuangying Ma, Sebastian Hietzschold, Valentina Rohnacher, Wolfgang Kowalsky, Wolfram Jaegermann, Jakob Bombsch, Florian Ullrich, Eric Mankel, Sabina Hillebrandt, Annemarie Pucci
Publikováno v:
ACS applied materialsinterfaces. 9(45)
Nickel oxide (NiO) is a widely used material for efficient hole extraction in optoelectronic devices. However, its surface characteristics strongly depend on the processing history and exposure to adsorbates. To achieve controllability of the electro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7326f31e59cb4bf92839f4d10516a128
https://pubmed.ncbi.nlm.nih.gov/29052974
https://pubmed.ncbi.nlm.nih.gov/29052974