Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Jake Scoggin"'
Autor:
Sadid Muneer, Jake Scoggin, Faruk Dirisaglik, Lhacene Adnane, Adam Cywar, Gokhan Bakan, Kadir Cil, Chung Lam, Helena Silva, Ali Gokirmak
Publikováno v:
AIP Advances, Vol 8, Iss 6, Pp 065314-065314-8 (2018)
Resistivity of metastable amorphous Ge2Sb2Te5 (GST) measured at device level show an exponential decline with temperature matching with the steady-state thin-film resistivity measured at 858 K (melting temperature). This suggests that the free carrie
Externí odkaz:
https://doaj.org/article/58b745dd4d77407db66578de5a8ceaf3
Autor:
Faruk Dirisaglik, Jake Scoggin, Tashfiq Bin Kashem, Nafisa Noor, Anna Gorbenko, Raihan Sayeed Khan, Sadid Muneer, Lhacene Adnane, Adam Cywar, Ali Gokirmak, Helena Silva
Publikováno v:
IEEE Transactions on Nanotechnology. 20:75-82
The rapid quench from melt associated with the reset operation in phase change memory is a suitable physical process to leverage programming variability for hardware security. We have experimentally characterized cell-to-cell programming variability
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8bb8dbd5ce68feb982184fe554bc1b6a
https://doi.org/10.1109/tnano.2020.3041400
https://doi.org/10.1109/tnano.2020.3041400
Publikováno v:
physica status solidi (RRL) – Rapid Research Letters. :2200419
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9cef0542659481d270c7714f01dc54d9
https://doi.org/10.1002/pssr.202200419
https://doi.org/10.1002/pssr.202200419
Publikováno v:
ECS Meeting Abstracts. :1031-1031
Phase change memory (PCM) is a high-speed high-endurance non-volatile electronic memory technology which utilizes the electrical resistivity difference between the amorphous and the crystalline phases of phase change materials, such as Ge2Sb2Te5 (GST
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a0d6b5ff1d54ad40402442abe3f49918
https://doi.org/10.1149/ma2022-01181031mtgabs
https://doi.org/10.1149/ma2022-01181031mtgabs
Publikováno v:
ECS Meeting Abstracts. :1032-1032
Phase change memory (PCM) is a high-speed non-volatile memory that utilizes the reversible and fast transition between highly conductive crystalline phase and highly resistive (dielectric) amorphous phase of the phase change material to store informa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25dab537622427082eaaa22a2b8162ec
https://doi.org/10.1149/ma2022-01181032mtgabs
https://doi.org/10.1149/ma2022-01181032mtgabs
Publikováno v:
Materials Science in Semiconductor Processing. 134:106042
In this work, two dimensional six-contact phase change devices that can perform toggle logic operations is analyzed through 2D electrothermal simulations with dynamic materials modelling, integrated with CMOS access circuitry. Toggle configurations a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3382014309b15c81749b2590674e1c54
https://doi.org/10.1016/j.mssp.2021.106042
https://doi.org/10.1016/j.mssp.2021.106042
Publikováno v:
IEEE Transactions on Electron Devices. 64:4472-4478
We extend our finite-element model of nucleation, growth, and amorphization in phase-change memory devices to model discrete nucleation and grain boundaries, including the evolution of grains within fully crystalline material during long-term anneals
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62e38b9890488cf296f375946ff4cd44
https://doi.org/10.1109/ted.2017.2745500
https://doi.org/10.1109/ted.2017.2745500
Autor:
Helena Silva, Gokhan Bakan, Ali Gokirmak, Kadir Cil, Adam Cywar, Sadid Muneer, Faruk Dirisaglik, Lhacene Adnane, Jake Scoggin, Chung H. Lam
Publikováno v:
AIP Advances, Vol 8, Iss 6, Pp 065314-065314-8 (2018)
Resistivity of metastable amorphous Ge2Sb2Te5 (GST) measured at device level show an exponential decline with temperature matching with the steady-state thin-film resistivity measured at 858 K (melting temperature). This suggests that the free carrie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eaca7405b4312e82aee4d694df57f33e
Autor:
Jake Scoggin, Phuong Ha Nguyen, Chenglu Jin, Nafisa Noor, Zachary Woods, Marten van Dijk, Helena Silva, Aaron Ciardullo, Ali Gokirmak, Raihan Sayeed Khan, Sadid Muneer
Publikováno v:
Security Opportunities in Nano Devices and Emerging Technologies
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a48fa8b040dd1cfd55e5f6c65a0b84d7
https://doi.org/10.1201/9781315265056-6
https://doi.org/10.1201/9781315265056-6
Publikováno v:
Applied Physics Letters. 114:043502
We present thermodynamic crystallization and melting models and calculate phase change velocities in Ge2Sb2Te5 based on kinetic and thermodynamic parameters with a focus on the impacts of grain boundary melting. The calculated phase change velocities
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::41840b47ca01778e933bc3f3ff345430
https://doi.org/10.1063/1.5067397
https://doi.org/10.1063/1.5067397