Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Jaisun Kyoung"'
Autor:
W. Namkoong, Soo-Bok Chin, Y. Jang, Chulgi Song, Ilsin An, Sung-Muk Lee, Jaisun Kyoung, Jong-Hoi Kim, Tae-Hyuk Ahn
Publikováno v:
Journal of the Korean Physical Society. 53:1650-1654
Zirconium oxide (ZrO2) is suggested as a good candidate for a high-k dielectric. For the storage capacitor in a dynamic random access memory, a multi-stack of ZrO2 and Al2O3 is reported to reduce the leakage current and to secure a high capacitance.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::331223aecd0dc381c7430edc848e1bb5
https://doi.org/10.3938/jkps.53.1650
https://doi.org/10.3938/jkps.53.1650
Publikováno v:
Japanese Journal of Applied Physics. 47:6536-6539
The photomask (PM) surface is covered with a pellicle to protect from dust and other airborne particles. However, a defect known as haze appears on the surface of the PM during exposure even with a pellicle cover. As lithography goes into the deeper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6b2e725429e99859c4b004e7fd50392
https://doi.org/10.1143/jjap.47.6536
https://doi.org/10.1143/jjap.47.6536
Autor:
Jaisun Kyoung, Jusang Rhim, Soo-Bok Chin, Hyoungjoo Lee, Ilsin An, Chulgi Song, Sangyouk Lee, Tae-Hyuk Ahn
Publikováno v:
SPIE Proceedings.
Crystal growth and haze formation on photomasks become serious problems in UV lithography. As the wavelength becomes shorter, photons carry more energy, so the chances of having a photochemical reaction become much higher. Pellicle, adhesive, residue
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34723e54306f26f317748baaae941953
https://doi.org/10.1117/12.772151
https://doi.org/10.1117/12.772151
Publikováno v:
SPIE Proceedings.
We applied spectroscopic ellipsometry for possible determination of the size of contact holes. We fabricated contact hole patterns in two dimensional array to increase sensitivity and the size of contact hole varied from 80 to 150 nm. Variation of ho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a5216e3e36fb48d0f3141c569dbc689
https://doi.org/10.1117/12.656875
https://doi.org/10.1117/12.656875
Autor:
Sung-Jin Kim, Younghoon Kim, Jaisun Kyoung, Jin-Back Park, Hye-Keun Oh, Seung-Wook Park, Ilsin An
Publikováno v:
SPIE Proceedings.
Recently, a pattern size gradually has reduced to enhance the integration of semiconductor device. As minimum linewidths have shrunk, the exposure wavelength has also progressively shrunk. The exposure wavelengths have been reduced progressively from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8a95a01b238833abcf253867376a924
https://doi.org/10.1117/12.656284
https://doi.org/10.1117/12.656284
Autor:
Seong-Jin Kim, Younghoon Kim, Jin-Back Park, Hye-Keun Oh, Mi-Lim Jung, Ilsin An, Sung-Hyuck Kim, Jaisun Kyoung, Seung-Wook Park
Publikováno v:
SPIE Proceedings.
Haze formation on reticle continues to be a significant problem for the semiconductor industry. Haze can be formed on the outside pellicle and on the quartz back side of the reticle. Major component of the haze is known to be aluminum sulfate that co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a7123a43b19c617db140615fc70799c
https://doi.org/10.1117/12.632375
https://doi.org/10.1117/12.632375