Zobrazeno 1 - 10
of 72
pro vyhledávání: '"Jai-Kwang Shin"'
Autor:
Junsik Hwang, Hyun-Joon Kim-Lee, Seog Woo Hong, Joon-Yong Park, Dong Kyun Kim, Dongho Kim, Sanghoon Song, Jonghyun Jeong, Yongchan Kim, Min Jae Yeom, Min-chul Yu, Joosung Kim, Younghwan Park, Dong-Chul Shin, Sungjin Kang, Jai-Kwang Shin, Yongsung Kim, Euijoon Yoon, Hojin Lee, Geonwook Yoo, Jaewook Jeong, Kyungwook Hwang
Publikováno v:
Nature Electronics. 6:216-224
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2078043eca41ac53a9c2cac9ad8136f7
https://doi.org/10.1038/s41928-022-00912-w
https://doi.org/10.1038/s41928-022-00912-w
Autor:
Bo-Ram Kim, Sun-Kyu Hwang, Joonyong Kim, Dong-Chul Shin, Jun Hyuk Park, Young-Hwan Park, Woo-Chul Jeon, In-jun Hwang, Soogine Chong, Jae-joon Oh, Min Chul Yu, Jai-Kwang Shin, Jongseob Kim
Publikováno v:
IEEE Electron Device Letters. 42:1208-1211
Wafer level transient voltage measurement (WLTVM) to estimate the short circuit capability of AlGaN/GaN HEMT devices is suggested. Two groups of samples with similar DC and switching properties but different short circuit capabilities of 4-7 and $>{1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1de4c775ad8cb110dc7a74f73a5836b5
https://doi.org/10.1109/led.2021.3090341
https://doi.org/10.1109/led.2021.3090341
Autor:
Bo-Ram Kim, Young-Hwan Park, Dong-Chul Shin, Sun-Kyu Hwang, Jongseob Kim, Min Chul Yu, Joonyong Kim, Jun Hyuk Park, Jai-Kwang Shin, Soogine Chong, Jae-joon Oh, In-jun Hwang
Publikováno v:
IEEE Electron Device Letters. 42:557-560
This work reports the transient measurement of the AlGaN/GaN high electron-mobility transistor (HEMT) drift region potential in the high power state during switching. The effect of high power stress has been reported by device characterization after
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8cf40e61e5a188b1ee19fcc6e91066b9
https://doi.org/10.1109/led.2021.3058329
https://doi.org/10.1109/led.2021.3058329
Autor:
Kiho Kong, Eun-sung Lee, Jinjoo Park, Jun-hee Choi, Nak-hyun Kim, Shinae Jun, Sungwoo Hwang, Dongho Kim, Euijoon Yoon, Deuk-seok Chung, Miyoung Kim, Jung Hun Park, Joo Hun Han, Joosung Kim, Jai-Kwang Shin
Publikováno v:
Nature Photonics. 15:449-455
InGaN-based blue light-emitting diodes (LEDs), with their high efficiency and brightness, are entering the display industry. However, a significant gap remains between the expectation of highly efficient light sources and their experimental realizati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::341a5198e2f6d8a6b32726a83f7c9dce
https://doi.org/10.1038/s41566-021-00783-1
https://doi.org/10.1038/s41566-021-00783-1
Autor:
Jehong Oh, Dongho Kim, Duyoung Yang, Kyungwook Hwang, Junsik Hwang, Jongmyeong Kim, Seungmin Lee, Jungel Ryu, Sohyeon Park, Jai-Kwang Shin, Yongsung Kim, Yongjo Park, Euijoon Yoon, Ho Won Jang
Publikováno v:
ACS applied materialsinterfaces. 14(22)
Microlight-emitting diode (Micro-LED) is the only display production technology capable of meeting the high-performance requirements of future screens. However, it has significant obstacles in commercialization due to etching loss and efficiency redu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cd2c7cd226e712b62451b166b37d446c
https://pubmed.ncbi.nlm.nih.gov/35623063
https://pubmed.ncbi.nlm.nih.gov/35623063
Autor:
Won-Joon Son, Alexander V. Yakubovich, Alexey Osipov, Hyo Sug Lee, Jhun-mo Son, Sotoyama Wataru, Hyeonho Choi, Hasup Lee, Dongseon Lee, Jai-Kwang Shin, Youn-Suk Choi, Inkoo Kim, Yongsik Jung
Publikováno v:
The Journal of Physical Chemistry C. 123:11140-11150
We report a new formulation for Golden Rule-based predictions of photoluminescence quantum yields (PLQY) of phosphorescent emitters containing a heavy element, and its implementation compatible wit...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd802cbe6866bf77dc315f7029588dbe
https://doi.org/10.1021/acs.jpcc.9b02031
https://doi.org/10.1021/acs.jpcc.9b02031
Autor:
Seongho Jeon, Ken Ogata, Changhoon Jung, Meiten Koh, Kimihiko Ito, Shinya Wakita, Shunsuke Saito, Soohwan Sul, Ki-Hong Kim, Hee-Goo Kim, Dong-Su Ko, Koichi Takei, Kohei Uosaki, Seo Jinah, Sungsoo Han, Jai-Kwang Shin, In-Sun Jung, Min-Sik Park, Seok-Gwang Doo, Jin Hae Kim, Jihyun Jang, Yoshimi Kubo, Jun-Ho Lee
Publikováno v:
Nano Energy. 56:875-883
Nano-structured silicon anodes are attractive alternatives to graphite in lithium-ion batteries; however, despite recent progress in nano-engineered composites, its use remains limited. One of the issues, particularly in silicon-dominated anodes, is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f64102b22daac81b350fa34a144ddbd1
https://doi.org/10.1016/j.nanoen.2018.11.092
https://doi.org/10.1016/j.nanoen.2018.11.092
Autor:
Hyo Sug Lee, Youn-Suk Choi, Won-Joon Son, Sangmo Kim, Youngchun Kwon, Inkoo Kim, Young Min Nam, Jiho Yoo, Seokho Kang, Yongsik Jung, Dongseon Lee, Sunghan Kim, Kyungdoc Kim, Jhun-mo Son, Sungwoo Hwang, Jai-Kwang Shin
Publikováno v:
npj Computational Materials, Vol 4, Iss 1, Pp 1-7 (2018)
The discovery of high-performance functional materials is crucial for overcoming technical issues in modern industries. Extensive efforts have been devoted toward accelerating and facilitating this process, not only experimentally but also from the v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::44035b72d89c7992726747be2822c20d
http://link.springer.com/article/10.1038/s41524-018-0128-1
http://link.springer.com/article/10.1038/s41524-018-0128-1
Autor:
Jae Woong Yoon, Youngsun Choi, Hong-Seok Lee, Pierre Berini, Yongsung Kim, Gunpyo Kim, Jai Kwang Shin, Choloong Hahn, Chang Seung Lee, Ki Yeon Yang, Jeong Yub Lee, Seok Ho Song
Publikováno v:
Nature. 562:86-90
Topological operations around exceptional points1–8—time-varying system configurations associated with non-Hermitian singularities—have been proposed as a robust approach to achieving far-reaching open-system dynamics, as demonstrated in highly
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65680d3c8355eb0bc4f26f6abb4608aa
https://doi.org/10.1038/s41586-018-0523-2
https://doi.org/10.1038/s41586-018-0523-2
Autor:
Jae Gwan Chung, Jeongmin Kim, Hee Goo Kim, Se Yun Kim, Dong-Su Ko, Soohwan Sul, Woo Jin Lee, Wooyoung Lee, Doh Won Jung, Jung Hwa Kim, Dong Jin Yun, Jai-Kwang Shin, Jong Wook Roh, Changhoon Jung, Chan Kwak, Won-Joon Son
Publikováno v:
NPG Asia Materials, Vol 10, Iss 4, Pp 266-276 (2018)
The structural, electrical, and optical properties of monolayer ruthenium oxide (RuO2) nanosheets (NSs) fabricated by chemical exfoliation of a layered three-dimensional form of K-intercalated RuO2 are studied systematically via experimental and comp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::602914130a6cc0097880366c2f78dac1
https://doi.org/10.1038/s41427-018-0020-y
https://doi.org/10.1038/s41427-018-0020-y