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Autor:
Seok-Woo Nam, Chang-Lyong Song, Hun-Young Lim, Sanghoon Lee, Jung-Hwan Kim, Jae-Duk Lee, Jai-Dong Lee, Woong Lee, Hyeon-deok Lee
Publikováno v:
2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..
We studied factors which affect cell Vth variation in the floating gate flash memory. By simulation and experiment, we showed that the shape of STI (shallow trench isolation) and the tunnel oxide thickness in the STI edge were the main control factor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efa388ed15bb5d5de6c6de9c703a3de2
https://doi.org/10.1109/relphy.2005.1493197
https://doi.org/10.1109/relphy.2005.1493197
