Zobrazeno 1 - 10
of 48
pro vyhledávání: '"Jai Verma"'
Publikováno v:
Journal of Central European Agriculture, Vol 14, Iss 2, Pp 57-66 (2013)
Six generations namely, P1, P2, F2, F3, BC1s and BC2s (2006-07) and P1, P2, F3, F4, BC1ss and BC2ss (2007-08) developed from four parental genotypes viz. DBW 14 (heat tolerant), NP 846 (heat and drought tolerant), WH 147 and Raj 4014 (heat susceptibl
Externí odkaz:
https://doaj.org/article/6ac97145b87741828a26fb57743dee56
Autor:
Pamela Piña Santana, Daniel Lorenzatti, Kacie Amacher, Jake T. Gilman, Abdullah Aftab, Patricia A. Pellikka, Min Pu, Amit Jai Verma, Nishi Shah, Carlos A. Gongora, Aldo Schenone, Ulrich P. Jorde, Luigi Di Biase, Mario J. Garcia, Leandro Slipczuk
Publikováno v:
Journal of the American College of Cardiology. 81:1392
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9044e82b79ad8dd521849be7767f16dd
https://doi.org/10.1016/s0735-1097(23)01836-3
https://doi.org/10.1016/s0735-1097(23)01836-3
Publikováno v:
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
Universitat Politècnica de Catalunya (UPC)
The lighting industry is facing a big challenge regarding the design of more sustainable lighting products. Although the development of LED technology has contributed enormously to their energy efficiency, more efforts are needed in reducing not only
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::30dbfaf43e5a9300ff7eb720215acfda
https://doi.org/10.1016/j.jclepro.2021.128575
https://doi.org/10.1016/j.jclepro.2021.128575
Autor:
Kevin Lee, Debdeep Jena, S. M. Islam, Huili Xing, Vladimir Protasenko, Shyam Bharadwaj, Jai Verma
Publikováno v:
Light-Emitting Diodes ISBN: 9783319992105
Deep ultraviolet light-emitting diodes (200–280 nm) have many potential applications in diagnostics, therapeutics, security, and tanning. But, the state-of-the-art LEDs suffer from low external quantum efficiency (< 20%). The external quantum effic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a1cbc9ee2008c1513de7c2880d17bbe
https://doi.org/10.1007/978-3-319-99211-2_10
https://doi.org/10.1007/978-3-319-99211-2_10
Autor:
Shiping Guo, Tian Fang, Michael L. Schuette, Patrick Fay, Jia Guo, Berardi Sensale-Rodriguez, Edward Beam, Guowang Li, Huili Grace Xing, Debdeep Jena, Gregory L. Snider, Ronghua Wang, Jai Verma, Andrew Ketterson, Paul Saunier, Xiang Gao
Publikováno v:
Solid-State Electronics. 80:67-71
Delay analysis providing an alternative physical explanation on carrier transport, which may be more applicable to high electron mobility transistor (HEMT) channels with moderate carrier mobilities, has been applied to enhancement-mode (E-mode) and d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a748ce4aa1a5b2fea2f14217658534ce
https://doi.org/10.1016/j.sse.2012.10.004
https://doi.org/10.1016/j.sse.2012.10.004
Publikováno v:
Journal of Crystal Growth. 334:113-117
Semiconductor nanowires have received increasing focus from researchers due to their one dimensional characteristics, which offer new horizons for device designs. Nanowire growth has been shown to yield crystalline material on non-lattice matched sub
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e499a75fc1c368b1745fdb9a2c3af04
https://doi.org/10.1016/j.jcrysgro.2011.08.032
https://doi.org/10.1016/j.jcrysgro.2011.08.032
Publikováno v:
IEEE Electron Device Letters. 35:615-617
A GaN-based heterostructure barrier diode (HBD) similar to GaAs planar-doped barrier diodes is demonstrated. Instead of doping with impurities, the polarization-induced sheet charge at the III-nitride heterojunction behaves as an effective $\delta$ -
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6257d1e7a95b959c54c50bfc1e0d438d
https://doi.org/10.1109/led.2014.2316140
https://doi.org/10.1109/led.2014.2316140
Autor:
Mingda Zhu, Debdeep Jena, Satyaki Ganguly, Wan Sik Hwang, Jai Verma, Zongyang Hu, Huili Grace Xing, Bo Song
Publikováno v:
physica status solidi c. 11:887-889
AlGaN/GaN high-electron-mobility transistors (HEMT) have been grown by radio frequency molecular beam epi-taxy (RF-MBE) on 3″ Si substrates. A record low contact resistance Rc ˜ 0.11 Ω.mm has been achieved for GaN HEMTs on Si by using non alloyed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::587a7db54c8826c8fda3ba21e1f1d1a3
https://doi.org/10.1002/pssc.201300668
https://doi.org/10.1002/pssc.201300668
Publikováno v:
International Symposium for Testing and Failure Analysis.
Resolution of optical fault isolation (FI) and nanoprobing tools needs to keep pace with the device downscaling to be effective for semiconductor process development. In this paper we present and discuss state-of-the-art FI and nanoprobing techniques
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::baafb985e10848df0c7c4cafae03a02f
https://doi.org/10.31399/asm.cp.istfa2015p0052
https://doi.org/10.31399/asm.cp.istfa2015p0052
Publikováno v:
2015 73rd Annual Device Research Conference (DRC).
Traditional impurity doping schemes are difficult for extreme-gap semiconductors, such as high Al content AlGaN alloys due to the large activation energies for donors and acceptors. Polarization-induced (or Pi-) doping, since its first demonstration
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae08e496d2b79c51f0783532383acbf8
https://doi.org/10.1109/drc.2015.7175559
https://doi.org/10.1109/drc.2015.7175559