Zobrazeno 1 - 10
of 732
pro vyhledávání: '"Jahnke F"'
Autor:
Koulas-Simos, A., Buchgeister, J., Drechsler, M., Zhang, T., Laiho, K., Sinatkas, G., Xu, J., Lohof, F., Kan, Q., Zhang, R. K., Jahnke, F., Gies, C., Chow, W. W., Ning, C. Z., Reitzenstein, S.
Metallic nanocavity lasers provide important technological advancement towards even smaller integrable light sources. They give access to widely unexplored lasing physics in which the distinction between different operational regimes, like those of t
Externí odkaz:
http://arxiv.org/abs/2201.05680
Autor:
Khanonkin, I., Lorke, M., Michael, S., Mishra, A. K., Reithmaier, J. P., Jahnke, F., Eisenstein, G.
Publikováno v:
Phys. Rev. B 98, 125307 (2018)
The process of tunneling injection is known to improve the dynamical characteristics of quantum well and quantum dot lasers; in the latter, it also improves the temperature performance. The advantage of the tunneling injection process stems from the
Externí odkaz:
http://arxiv.org/abs/1807.08250
Publikováno v:
Phys. Rev. B 98, 035434 (2018)
Monolayers of transition metal dichalcogenides (TMDCs) exhibit an exceptionally strong Coulomb interaction between charge carriers due to the two-dimensional carrier confinement in connection with weak dielectric screening. High densities of excited
Externí odkaz:
http://arxiv.org/abs/1804.08427
Autor:
Kreinberg, S., Chow, W. W., Wolters, J., Schneider, C., Gies, C., Jahnke, F., Höfling, S., Kamp, M., Reitzenstein, S.
Publikováno v:
Light: Science & Applications 6, e17030 (2017)
Measured and calculated results are presented on the emission properties of a new class of emitters operating in the cavity quantum electrodynamics regime. The structures are based on high-finesse GaAs/AlAs micropillar cavities, each with an active m
Externí odkaz:
http://arxiv.org/abs/1610.04129
Autor:
Lichtmannecker, S., Florian, M., Reichert, T., Blauth, M., Bichler, M., Jahnke, F., Finley, J. J., Gies, C., Kaniber, M.
We report a combined experimental and theoretical study of non-conventional lasing from higher multi-exciton states of a few quantum dot-photonic crystal nanocavity. We show that the photon output is fed from saturable quantum emitters rather than a
Externí odkaz:
http://arxiv.org/abs/1602.03998
Systematic study of carrier correlations in the electron-hole recombination dynamics of quantum dots
Autor:
Berstermann, T., Auer, T., Kurtze, H., Schwab, M., Yakovlev, D. R., Bayer, M., Wiersig, J., Gies, C., Jahnke, F., Reuter, D., Wieck, A. D.
The ground state carrier dynamics in self-assembled (In,Ga)As/GaAs quantum dots has been studied using time-resolved photoluminescence and transmission. By varying the dot design with respect to confinement and doping, the dynamics is shown to follow
Externí odkaz:
http://arxiv.org/abs/0706.3673
The electronic and optical properties of self-assembled InN/GaN quantum dots (QDs) are investigated by means of a tight-binding model combined with configuration interaction calculations. Tight-binding single particle wave functions are used as a bas
Externí odkaz:
http://arxiv.org/abs/cond-mat/0612353
Autor:
Schwab, M., Kurtze, H., Auer, T., Berstermann, T., Bayer, M., Wiersig, J., Baer, N., Gies, C., Jahnke, F., Reithmaier, J. P., Forchel, A., Benyoucef, M., Michler, P.
The light emission of self-assembled (In,Ga)As/GaAs quantum dots embedded in single GaAs-based micropillars has been studied by time-resolved photoluminescence spectroscopy. The altered spontaneous emission is found to be accompanied by a non-exponen
Externí odkaz:
http://arxiv.org/abs/cond-mat/0605728
A microscopic theory for the interaction of carriers with LO phonons is used to study the ultrafast carrier dynamics in nitride-based semiconductor quantum dots. It is shown that the efficiency of scattering processes is directly linked to quasi-part
Externí odkaz:
http://arxiv.org/abs/cond-mat/0509692
A microscopic theory is used to study the optical properties of semiconductor quantum dots. The dephasing of a coherent excitation and line-shifts of the interband transitions due to carrier-carrier Coulomb interaction and carrier-phonon interaction
Externí odkaz:
http://arxiv.org/abs/cond-mat/0509543