Zobrazeno 1 - 10
of 191
pro vyhledávání: '"Jahn, Uwe"'
Autor:
Zettler, Johannes K., Corfdir, Pierre, Hauswald, Christian, Luna, Esperanza, Jahn, Uwe, Flissikowski, Timur, Schmidt, Emanuel, Ronning, Carsten, Trampert, Achim, Geelhaar, Lutz, Grahn, Holger T., Brandt, Oliver, Fernández-Garrido, Sergio
Publikováno v:
Nano Letters 2016, 16, 2, 973
The realization of semiconductor structures with stable excitons at room temperature is crucial for the development of excitonics and polaritonics. Quantum confinement has commonly been employed for enhancing excitonic effects in semiconductor hetero
Externí odkaz:
http://arxiv.org/abs/2401.16868
Autor:
Lähnemann, Jonas, Kaganer, Vladimir M., Sabelfeld, Karl K., Kireeva, Anastasya E., Jahn, Uwe, Chèze, Caroline, Calarco, Raffaella, Brandt, Oliver
Publikováno v:
Phys. Rev. Applied 17, 024019 (2022)
We investigate the impact of threading dislocations with an edge component (a or a+c-type) on carrier recombination and diffusion in GaN(0001) layers close to the surface as well as in the bulk. To this end, we utilize cathodoluminescence imaging of
Externí odkaz:
http://arxiv.org/abs/2009.14634
Autor:
Brandt, Oliver, Kaganer, Vladimir M., Lähnemann, Jonas, Flissikowski, Timur, Pfüller, Carsten, Sabelfeld, Karl K., Kireeva, Anastasya E., Chèze, Caroline, Calarco, Raffaella, Grahn, Holger T., Jahn, Uwe
Publikováno v:
Phys. Rev. Applied 17, 024018 (2022)
We determine the diffusion length of excess carriers in GaN by spatially resolved cathodoluminescence spectroscopy utilizing a single quantum well as carrier collector or carrier sink. Monochromatic intensity profiles across the quantum well are reco
Externí odkaz:
http://arxiv.org/abs/2009.13983
Autor:
Jahn, Uwe, Kaganer, Vladimir M., Sabelfeld, Karl K., Kireeva, Anastasya E., Lähnemann, Jonas, Pfüller, Carsten, Flissikowski, Timur, Chèze, Caroline, Biermann, Klaus, Calarco, Raffaella, Brandt, Oliver
Publikováno v:
Phys. Rev. Applied 17, 024017 (2022)
The determination of the carrier diffusion length of semiconductors such as GaN and GaAs by cathodoluminescence imaging requires accurate knowledge about the spatial distribution of generated carriers. To obtain the lateral distribution of generated
Externí odkaz:
http://arxiv.org/abs/2002.08713
Autor:
Herranz, Jesús, Corfdir, Pierre, Luna, Esperanza, Jahn, Uwe, Lewis, Ryan B., Schrottke, Lutz, Lähnemann, Jonas, Tahraoui, Abbes, Trampert, Achim, Brandt, Oliver, Geelhaar, Lutz
Publikováno v:
ACS Applied Nano Materials 3, 165 (2020)
Core-shell GaAs-based nanowires monolithically integrated on Si constitute a promising class of nanostructures that could enable light emitters for fast inter- and intrachip optical connections. We introduce and fabricate a novel coaxial GaAs/(In,Ga)
Externí odkaz:
http://arxiv.org/abs/1908.10134
Autor:
Lähnemann, Jonas, Hill, Megan O., Herranz, Jesús, Marquardt, Oliver, Gao, Guanhui, Hassan, Ali Al, Davtyan, Arman, Hruszkewycz, Stephan O., Holt, Martin V., Huang, Chunyi, Calvo-Almazán, Irene, Jahn, Uwe, Pietsch, Ullrich, Lauhon, Lincoln J., Geelhaar, Lutz
Publikováno v:
Nano Lett. 19, 4448 (2019)
While the properties of wurtzite GaAs have been extensively studied during the past decade, little is known about the influence of the crystal polytype on ternary (In,Ga)As quantum well structures. We address this question with a unique combination o
Externí odkaz:
http://arxiv.org/abs/1903.07372
Autor:
Cho, YongJin, Bharadwaj, Shyam, Hu, Zongyang, Nomoto, Kazuki, Jahn, Uwe, Xing, Huili Grace, Jena, Debdeep
Blue light-emitting diodes (LEDs) consisting of a buried n+-p+ GaN tunnel junction, (In,Ga)N multiple quantum wells (MQWs) and a n+-GaN top layer are grown on single-crystal Ga-polar n+-GaN bulk wafers by plasma-assisted molecular beam epitaxy. The (
Externí odkaz:
http://arxiv.org/abs/1812.07708
Autor:
Lewis, Ryan B., Corfdir, Pierre, Herranz, Jesús, Küpers, Hanno, Jahn, Uwe, Brandt, Oliver, Geelhaar, Lutz
Publikováno v:
Nano Lett. 2017, 17, 4255-4260
Surface energies play a dominant role in the self-assembly of three dimensional (3D) nanostructures. In this letter, we show that using surfactants to modify surface energies can provide a means to externally control nanostructure self-assembly, enab
Externí odkaz:
http://arxiv.org/abs/1704.08014
Autor:
Lähnemann, Jonas, Flissikowski, Timur, Wölz, Martin, Geelhaar, Lutz, Grahn, Holger T., Brandt, Oliver, Jahn, Uwe
Publikováno v:
Nanotechnology 27, 455706 (2016)
Electron irradiation of GaN nanowires in a scanning electron microscope strongly reduces their luminous efficiency as shown by cathodoluminescence imaging and spectroscopy. We demonstrate that this luminescence quenching originates from a combination
Externí odkaz:
http://arxiv.org/abs/1607.03397
Publikováno v:
Semiconductor Sci. Technol. 30 (2015) 114005 (9pp)
Fe3Si/Al/Fe3Si/GaAs(001) structures were deposited by molecular-beam epitaxy and characterized by transmission and scanning electron microscopy, and x-ray diffraction. The first Fe3Si film on GaAs(001) is growing epitaxially as (001) oriented single
Externí odkaz:
http://arxiv.org/abs/1506.05357