Zobrazeno 1 - 10
of 1 147
pro vyhledávání: '"Jahn, U."'
Publikováno v:
Phys. Rev. B 86, 155309 (2012)
We analyze fluctuation of the layer thicknesses and its influence on the strain state of (In,Ga)As/(Al,Ga)As micro-tubes containing quantum well structures. In those structures a curved high-mobility two-dimensional electron gas (HM2DEG) is establish
Externí odkaz:
http://arxiv.org/abs/1907.09368
Autor:
Jenichen, B, Herfort, J, Hanke, M, Jahn, U, Kong, X, Dau, M T, Trampert, A, Kirmse, H, Erwin, S C
Publikováno v:
J. Appl. Phys. 120, 225304 (2016)
Co$_{2}$TiSi films were grown by molecular beam epitaxy on GaAs(001) and analyzed using reflection high-energy electron diffraction, and electron microscopy. In addition, X-ray diffraction was combined with lattice parameter calculations by density f
Externí odkaz:
http://arxiv.org/abs/1907.05238
Autor:
Sinito, C., Corfdir, P., Pfüller, C., Gao, G., Vílchez, J. Bartolomé, Kölling, S., Doblado, A. Rodil, Jahn, U., Lähnemann, J., Auzelle, T., Zettler, J. K., Flissikowski, T., Koenraad, P., Grahn, H. T., Geelhaar, L., Fernández-Garrido, S., Brandt, O.
Publikováno v:
Nano Letters 19, 5938 (2019)
Several of the key issues of planar (Al,Ga)N-based deep-ultraviolet light emitting diodes could potentially be overcome by utilizing nanowire heterostructures, exhibiting high structural perfection and improved light extraction. Here, we study the sp
Externí odkaz:
http://arxiv.org/abs/1905.04090
Autor:
Jahn, U., Musolino, M., Lähnemann, J., Dogan, P., Garrido, S. Fernández, Wang, J. F., Xu, K., Cai, D., Bian, L. F., Gong, X. J., Yang, H.
Publikováno v:
Semicond. Sci. Technol. 31, 065018 (2016)
Several ten $\mu$m GaN have been deposited on a silicon substrate using a two-step hydride vapor phase epitaxy (HVPE) process. The substrates have been covered by AlN layers and GaN nanostructures grown by plasma-assisted molecular-beam epitaxy. Duri
Externí odkaz:
http://arxiv.org/abs/1605.03089
Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy
Autor:
Nakhaie, S., Wofford, J. M., Schumann, T., Jahn, U., Ramsteiner, M., Hanke, M., Lopes, J. M. J., Riechert, H.
Publikováno v:
Applied Physics Letters 106, 213108 (2015)
Hexagonal boron nitride (h-BN) is a layered two-dimensional material with properties that make it promising as a dielectric in various applications. We report the growth of h-BN films on Ni foils from elemental B and N using molecular beam epitaxy. T
Externí odkaz:
http://arxiv.org/abs/1501.06606
Publikováno v:
In Journal of Solid State Chemistry February 2019 270:219-225
Autor:
Friedland, K. -J., Hey, R., Kostial, H., Jahn, U., Wiebicke, E., Ploog, K. H., Vorob'ev, A., Yukecheva, Ju., Prinz, V.
We have fabricated high-mobility, two-dimensional electron gases in a GaAs quantum well on cylindrical surfaces, which allows to investigate the magnetotransport behavior under varying magnetic fields along the current path. A strong asymmetry in the
Externí odkaz:
http://arxiv.org/abs/cond-mat/0703665
Autor:
Vorob'ev, A. B., Friedland, K. -J., Kostial, H., Hey, R., Jahn, U., Wiebicke, E., Yukecheva, Ju. S., Prinz, V. Ya.
Publikováno v:
Phys. Rev. B 75, 205309 (2007)
A giant asymmetry in the magnetoresistance was revealed in high-mobility, two-dimensional electron gas on a cylindrical surface. The longitudinal resistance along the magnetic-field gradient impressed by the surface curvature was found to vanish if m
Externí odkaz:
http://arxiv.org/abs/cond-mat/0703623
Publikováno v:
In Thin Solid Films 1 April 2015 580:89-93
Publikováno v:
Dependable IoT for Human and Industry ISBN: 9781003337843
Scopus-Elsevier
Scopus-Elsevier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1f6e5d5172d02eaaaf9d8afd6c483a18
https://doi.org/10.1201/9781003337843-20
https://doi.org/10.1201/9781003337843-20