Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Jagritee Talukdar"'
Dielectrically Modulated Single and Double Gate Tunnel FET Based Biosensors for Enhanced Sensitivity
Publikováno v:
IEEE Sensors Journal. 21:26566-26573
The paper explores the comparative biosensing analysis of single Gate (SG) and double Gate (DG) Extended Source Tunnel FET (ESTFET). The dielectric modulation technique has been incorporated for both the proposed biosensors with increased capture are
Publikováno v:
2022 IEEE International Symposium on Smart Electronic Systems (iSES).
Publikováno v:
2022 IEEE International Symposium on Smart Electronic Systems (iSES).
Publikováno v:
Lecture Notes in Electrical Engineering ISBN: 9789811923074
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6efebaf99d9048ba5ac8749020fd16c
https://doi.org/10.1007/978-981-19-2308-1_17
https://doi.org/10.1007/978-981-19-2308-1_17
Publikováno v:
Materials Science and Engineering: B. 293:116455
Publikováno v:
Silicon. 13:3971-3980
This paper presents the analysis of noise in Single Gate Extended Source TFET (SG-ESTFET) considering the absence and presence of interface trap charges, when the device is subjected to scaling and variation of parameters like device gate length (Lg)
Publikováno v:
Ain Shams Engineering Journal, Vol 11, Iss 3, Pp 677-686 (2020)
In this paper a method is proposed to derive an equation for the oscillation frequency and amplitude of a ring oscillator built using two different current sources. Taking into consideration the transistor’s region of operation, the proposed method
Publikováno v:
Journal of Electronic Materials. 49:4333-4342
This paper investigates the trap analysis of a double-gate extended-source tunnel field-effect transistor (DG-ESTFET) and single-gate extended-source tunnel field-effect transistor (SG-ESTFET) with a δp+ SiGe pocket layer. The trap analysis of both
Publikováno v:
Algorithms for Intelligent Systems ISBN: 9789811668920
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bc458230aec5d3fc6243fe55818ad08
https://doi.org/10.1007/978-981-16-6893-7_5
https://doi.org/10.1007/978-981-16-6893-7_5
Publikováno v:
Silicon. 12:2273-2281
Tunnel FET (TFET) is a significant discovery in the field of low power application, which has the ability to sustain short channel effects arising due to scaling. But the disadvantage of TFET is low ON current, and it is a challenge to maintain a hig