Zobrazeno 1 - 10
of 76
pro vyhledávání: '"Jagadheswaran Rajendran"'
Publikováno v:
Ain Shams Engineering Journal, Vol 15, Iss 4, Pp 102625- (2024)
The Internet of Things (IoT) has emerged as a disruptive force, transforming industries, cities, and daily life in a time of unprecedented connection. This outcome has called for robust security, reliability, and efficient power management for the Io
Externí odkaz:
https://doaj.org/article/d81eaa01919a48ce8d57e010bb486769
Publikováno v:
Elektronika ir Elektrotechnika, Vol 28, Iss 6, Pp 21-26 (2022)
This paper describes the implementation of low-power, low-phase-noise (PN), and robust startup tailless class-C voltage-controlled oscillator (TVCO) for 5G new radio (NR) technology. It features dual gate voltage control source biasing to generate fa
Externí odkaz:
https://doaj.org/article/0f1de883e32b4d1f8a756780b055f342
Autor:
Arvind Singh Rawat, Jagadheswaran Rajendran, Selvakumar Mariappan, Pravinah Shasidharan, Narendra Kumar, Binboga Siddik Yarman
Publikováno v:
IEEE Access, Vol 10, Pp 79365-79378 (2022)
This paper presents a bias modulation linearization technique for a 919 MHz −923 MHz CMOS power amplifier which employs driver voltage modulation and main amplifier split bias. Through the proposed linearization technique, it is observed that the p
Externí odkaz:
https://doaj.org/article/ad656ff2926c43a0afa1ef10f990484a
Autor:
Balamahesn Poongan, Jagadheswaran Rajendran, Selvakumar Mariappan, Arvind Singh Rawat, Narendra Kumar, Arokia Nathan, Binboga S. Yarman
Publikováno v:
Micromachines, Vol 14, Iss 9, p 1724 (2023)
An Auto-Trimming CMOS Bandgap References Circuit (ATBGR) with PSRR enhancement circuit for Artificial Intelligence of Things (AIoT) chips is presented in this paper. The ATBGR is designed with a first-order temperature compensation technique providin
Externí odkaz:
https://doaj.org/article/e0b6f3b51f8348e6a28c8425c67096fb
Autor:
Sofiyah Sal Hamid, Selvakumar Mariappan, Jagadheswaran Rajendran, Arvind Singh Rawat, Nuha A. Rhaffor, Narendra Kumar, Arokia Nathan, Binboga S. Yarman
Publikováno v:
Micromachines, Vol 14, Iss 8, p 1551 (2023)
Wireless communication systems have undergone significant development in recent years, particularly with the transition from fourth generation (4G) to fifth generation (5G). As the number of wireless devices and mobile data usage increase, there is a
Externí odkaz:
https://doaj.org/article/21ae5e7d8f70491b8214327bff970c99
Autor:
Selvakumar Mariappan, Jagadheswaran Rajendran, Yusman M. Yusof, Norlaili M. Noh, Binboga Siddik Yarman
Publikováno v:
IEEE Access, Vol 9, Pp 48831-48840 (2021)
A broadband 180 nm CMOS power amplifier (PA) operating from a frequency bandwidth of 400 MHz to 2.8 GHz is presented in this paper. The PA is integrated with an inductor-less Broadband-Pre-Distorter (BPD) to enhance its linearity for wide bandwidth.
Externí odkaz:
https://doaj.org/article/cb3a6da02e9d4eb795569c9d3f357246
Autor:
Loganathan Ramalingam, Selvakumar Mariappan, Pharveen Parameswaran, Jagadheswaran Rajendran, Ram Sharma Nitesh, Narendra Kumar, Arokia Nathan, Binboga Siddik Yarman
Publikováno v:
IEEE Access, Vol 9, Pp 106107-106139 (2021)
In this paper, the evolution and milestones of RFEH and related breakthroughs over the years are reviewed and presented. The review begins with an overview of the surging energy crisis due to the increasing demand for wireless communication devices.
Externí odkaz:
https://doaj.org/article/7d5897968ea74d159aa66472dcc1aebd
Autor:
Selvakumar Mariappan, Jagadheswaran Rajendran, Narendra Kumar, Masuri Othman, Arokia Nathan, Andrei Grebennikov, Binboga S. Yarman
Publikováno v:
Micromachines, Vol 14, Iss 3, p 530 (2023)
This paper proposes a wideband CMOS power amplifier (PA) with integrated digitally assisted wideband pre-distorter (DAWPD) and a transformer-integrated tunable-output impedance matching network. As a continuation of our previous research, which focus
Externí odkaz:
https://doaj.org/article/b044b2a70ac6444c892dca4fc5dcb0c4
Autor:
Balamahesn Poongan, Jagadheswaran Rajendran, Li Yizhi, Selvakumar Mariappan, Pharveen Parameswaran, Narendra Kumar, Masuri Othman, Arokia Nathan
Publikováno v:
Micromachines, Vol 14, Iss 2, p 379 (2023)
A low-power capacitorless demultiplexer-based multi-voltage domain low-dropout regulator (MVD-LDO) with 180 nm CMOS technology is proposed in this work. The MVD-LDO has a 1.5 V supply voltage headroom and regulates an output from four voltage domains
Externí odkaz:
https://doaj.org/article/38e0fd64cb4d4c3daf480d2b03471d99
Autor:
Yizhi Li, Jagadheswaran Rajendran, Selvakumar Mariappan, Arvind Singh Rawat, Sofiyah Sal Hamid, Narendra Kumar, Masuri Othman, Arokia Nathan
Publikováno v:
Micromachines, Vol 14, Iss 2, p 392 (2023)
Radio frequency energy harvesting (RFEH) is one form of renewable energy harvesting currently seeing widespread popularity because many wireless electronic devices can coordinate their communications via RFEH, especially in CMOS technology. For RFEH,
Externí odkaz:
https://doaj.org/article/ff1cddffb3b24580a97a908e9057f685