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Substrate temperature influenced physical properties of silicon MOS devices with TiO2 gate dielectric.

Autor: Chandra Sekhar, M., Kondaiah, P., Jagadeesh Chandra, S. V., Mohan Rao, G., Uthanna, S.

Publikováno v: Surface & Interface Analysis: SIA; Sep2012, Vol. 44 Issue 9, p1299-1304, 6p

Influence of Ultra-Thin Ge₃N₄ Passivation Layer on Structural, Interfacial, and Electrical Properties of HfO₂/Ge Metal-Oxide-Semiconductor Devices.

Autor: Mallem K; Information and Communication Device Laboratory, School of Information and Communication Engineering, Sungkyunkwan University, 2066, Seobu-ro, jangan-gu, suwon-si, gyeong gi-Do, 16419, Republic of Korea., Jagadeesh Chandra SV; Department of Electronics and Communication Engineering, Lakireddy Bali Reddy College of Engineering, Mylavaram 521230, Andhra Pradesh, India., Ju M; Information and Communication Device Laboratory, School of Information and Communication Engineering, Sungkyunkwan University, 2066, Seobu-ro, jangan-gu, suwon-si, gyeong gi-Do, 16419, Republic of Korea., Dutta S; Information and Communication Device Laboratory, School of Information and Communication Engineering, Sungkyunkwan University, 2066, Seobu-ro, jangan-gu, suwon-si, gyeong gi-Do, 16419, Republic of Korea., Ramana CHVV; Department of Electronic Engineering, Institute for Wearable Convergence Electronics, Kyung Hee University, 1732 Deogyeong-daero, Giheung-gu, Yongin 17104, Republic of Korea., Hussain SQ; Information and Communication Device Laboratory, School of Information and Communication Engineering, Sungkyunkwan University, 2066, Seobu-ro, jangan-gu, suwon-si, gyeong gi-Do, 16419, Republic of Korea., Park J; Information and Communication Device Laboratory, School of Information and Communication Engineering, Sungkyunkwan University, 2066, Seobu-ro, jangan-gu, suwon-si, gyeong gi-Do, 16419, Republic of Korea., Kim Y; Information and Communication Device Laboratory, School of Information and Communication Engineering, Sungkyunkwan University, 2066, Seobu-ro, jangan-gu, suwon-si, gyeong gi-Do, 16419, Republic of Korea., Cho YH; Information and Communication Device Laboratory, School of Information and Communication Engineering, Sungkyunkwan University, 2066, Seobu-ro, jangan-gu, suwon-si, gyeong gi-Do, 16419, Republic of Korea., Cho EC; Information and Communication Device Laboratory, School of Information and Communication Engineering, Sungkyunkwan University, 2066, Seobu-ro, jangan-gu, suwon-si, gyeong gi-Do, 16419, Republic of Korea., Yi J; Information and Communication Device Laboratory, School of Information and Communication Engineering, Sungkyunkwan University, 2066, Seobu-ro, jangan-gu, suwon-si, gyeong gi-Do, 16419, Republic of Korea.

Publikováno v: Journal of nanoscience and nanotechnology [J Nanosci Nanotechnol] 2020 Feb 01; Vol. 20 (2), pp. 1039-1045.