Zobrazeno 1 - 10
of 70
pro vyhledávání: '"Jaffres Henri"'
Autor:
Mičica Martin, Wright Adrien, Koleják Pierre, Lezier Geoffrey, Postava Kamil, Hawecker Jacques, De Vetter Anna, Tignon Jerome, Mangeney Juliette, Jaffres Henri, Lebrun Romain, Tiercelin Nicolas, Vanwolleghem Mathias, Dhillon Sukhdeep
Publikováno v:
Nanophotonics, Vol 13, Iss 10, Pp 1899-1907 (2024)
Spintronic terahertz emitters (STEs), based on optical excitation of nanometer thick ferromagnetic/heavy metal (FM/HM) heterojunctions, have become important sources for the generation of terahertz (THz) pulses. However, the efficiency of the optical
Externí odkaz:
https://doaj.org/article/1ff053090225486a8fab675b5be64492
Autor:
Krishnia, Sachin, Vojáček, Libor, Gomes, Tristan Da Câmara Santa Clara, Sebe, Nicolas, Ibrahim, Fatima, Li, Jing, Vicente-Arche, Luis Moreno, Collin, Sophie, Denneulin, Thibaud, Dunin-Borkowski, Rafal E., Ohresser, Philippe, Jaouen, Nicolas, Thiaville, André, Fert, Albert, Jaffrès, Henri, Chshiev, Mairbek, Reyren, Nicolas, Cros, Vincent
Perpendicular magnetic anisotropy (PMA) and Dzyaloshinskii-Moriya interactions are key interactions in modern spintronics. These interactions are thought to be dominated by the oxidation of the Co|Al interface in the archetypal Platinum-Cobalt-Alumin
Externí odkaz:
http://arxiv.org/abs/2409.10685
Topological insulators are quantum materials involving Time-reversal protected surface states(TSS) making them appealing candidates for the design of next generation of highly efficient spintronic devices. The very recent observation of large transie
Externí odkaz:
http://arxiv.org/abs/2407.03120
Autor:
Liu, Yongshan, Xu, Yong, Fert, Albert, Jaffres, Henri-Yves, Eimer, Sylvain, Nie, Tianxiao, Zhang, Xiaoqiang, Zhao, Weisheng
Orbitronics devices operate by manipulating orbitally-polarized currents. Recent studies have shown that these orbital currents can be excited by femtosecond laser pulses in ferromagnet as Ni and converted into ultrafast charge current via orbital-to
Externí odkaz:
http://arxiv.org/abs/2402.09228
Autor:
Xu, Yong, Zhang, Fan, Fert, Albert, Jaffres, Henri-Yves, Liu, Yongshan, Xu, Renyou, Jiang, Yuhao, Cheng, Houyi, Zhao, Weisheng
Orbitronics is based on the use of orbit currents as information carriers. Up to now, orbit currents were created from the conversion of charge or spin currents, and inversely, they could be converted back to charge or spin currents. Here we demonstr
Externí odkaz:
http://arxiv.org/abs/2307.03490
Autor:
Husain, Sajid, Fayet, Olivier, Prestes, Nicholas F., Collin, Sophie, Godel, Florian, Jacquet, Eric, Denneulin, Thibaud, Dunin-Borkowski, Rafal E., Thiaville, André, Bibes, Manuel, Reyren, Nicolas, Jaffrès, Henri, Fert, Albert, George, Jean-Marie
For energy efficient and fast magnetic memories, switching of perpendicular magnetization by the spin-orbit torque (SOT) appears as a very promising solution, even more using magnetic insulators that suppress electrical shunting. This SOT switching g
Externí odkaz:
http://arxiv.org/abs/2301.11469
Autor:
Zhou, Ziqi, Marcon, Paul, Devaux, Xavier, Pigeat, Philippe, Bouché, Alexandre, Migot, Sylvie, Jaafar, Abdallah, Arras, Remi, Vergnat, Michel, Ren, Lei, Tornatzky, Hans, Robert, Cedric, Marie, Xavier, George, Jean-Marie, Jaffrès, Henri-Yves, Stoffel, Mathieu, Rinnert, Hervé, Wei, Zhongming, Renucci, Pierre, Calmels, Lionel, Lu, Yuan
Perpendicularly magnetized spin injector with high Curie temperature is a prerequisite for developing spin optoelectronic devices on 2D materials working at room temperature (RT) with zero applied magnetic field. Here, we report the growth of Ta/CoFe
Externí odkaz:
http://arxiv.org/abs/2106.10317
Autor:
Hawecker, Jacques, Dang, T. H., Rongione, Enzo, Boust, James, Collin, Sophie, George, Jean-Marie, Drouhin, Henri-Jean, Laplace, Yannis, Grasset, Romain, Dong, Jingwei, Mangeney, Juliette, Tignon, Jerome, Jaffrès, Henri, Perfetti, Luca, Dhillon, Sukhdeep
Terahertz (THz) spin-to-charge conversion has become an increasingly important process for THz pulse generation and as a tool to probe ultrafast spin interactions at magnetic interfaces. However, its relation to traditional, steady state, ferromagnet
Externí odkaz:
http://arxiv.org/abs/2103.09557
Autor:
Giba, Alaa E., Gao, Xue, Stoffel, Mathieu, Devaux, Xavier, Xu, Bo, Marie, Xavier, Renucci, Pierre, Jaffrès, Henri, George, Jean-Marie, Cong, Guangwei, Wang, Zhanguo, Rinnert, Hervé, Lu, Yuan
We report on efficient spin injection in p-doped InGaAs/GaAs quantum-dot (QD) spin light emitting diode (spin-LED) under zero applied magnetic field. A high degree of electroluminescence circular polarization (Pc) ~19% is measured in remanence up to
Externí odkaz:
http://arxiv.org/abs/2008.06407
Autor:
Cosset-Chéneau, Maxen, Vila, Laurent, Zahnd, Gilles, Gusakova, Daria, Pham, Van Tuong, Grèzes, Cécile, Waintal, Xavier, Marty, Alain, Jaffrès, Henri, Attané, Jean-Philippe
Publikováno v:
Phys. Rev. Lett. 126, 027201 (2021)
The spin absorption process in a ferromagnetic material depends on the spin orientation relativelyto the magnetization. Using a ferromagnet to absorb the pure spin current created within a lateralspin-valve, we evidence and quantify a sizeable orient
Externí odkaz:
http://arxiv.org/abs/2007.14058