Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Jaeyi, Chun"'
Autor:
Kwang Jae Lee, Xinyi Wen, Yusuke Nakazato, Jaeyi Chun, Maliha Noshin, Chuanzhe Meng, Srabanti Chowdhury
Publikováno v:
Frontiers in Materials, Vol 10 (2023)
Embedding p-type gallium nitride (p-GaN) in AlxGa1-xN-based thin films has garnered significant interest as a versatile structure for bandgap engineering such as tunnel/super-junctions or current blocking/guiding functions in electronic devices. Howe
Externí odkaz:
https://doaj.org/article/ad6b0a812fda4f18af3e748be1d9a132
Publikováno v:
Crystals, Vol 13, Iss 4, p 709 (2023)
We report that, for the first time, a low-temperature GaN (LT-GaN) layer prepared by metal–organic chemical vapor deposition (MOCVD) regrowth was used as a Mg stopping layer (MSL) for a GaN trench current–aperture vertical electron transistor (CA
Externí odkaz:
https://doaj.org/article/27ec61e838044cf6bcbb6254a92912ab
Publikováno v:
IEEE Electron Device Letters. 44:841-844
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ce8fb84d8a2cfce5a9fbf98211de67b
https://doi.org/10.1109/led.2023.3259002
https://doi.org/10.1109/led.2023.3259002
Autor:
Matteo Meneghini, Srabanti Chowdhury, Joff Derluyn, Farid Medjdoub, Dong Ji, Jaeyi Chun, Riad Kabouche, Carlo De Santi, Enrico Zanoni, Gaudenzio Meneghesso
Publikováno v:
Springer Handbook of Semiconductor Devices ISBN: 9783030798260
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a8997e922fd46447421513e0daade8a7
https://hdl.handle.net/11577/3471038
https://hdl.handle.net/11577/3471038
Autor:
Kwang Jae, Lee, Yusuke, Nakazato, Jaeyi, Chun, Xinyi, Wen, Chuanzhe, Meng, Rohith, Soman, Maliha, Noshin, Srabanti, Chowdhury
Publikováno v:
Nanotechnology. 33(50)
Embedding
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::5b17a63df53d418ea593e5b99bd4effc
https://pubmed.ncbi.nlm.nih.gov/36103775
https://pubmed.ncbi.nlm.nih.gov/36103775
Autor:
Kwang Jae Lee, Yusuke Nakazato, Jaeyi Chun, Xinyi Wen, Chuanzhe Meng, Rohith Soman, Maliha Noshin, Srabanti Chowdhury
Publikováno v:
Nanotechnology. 33:505704
Embedding p-type gallium nitride (p-GaN) with controlled Mg out-diffusion in adjacent epitaxial layers is a key for designing various multi-junction structures with high precision and enabling more reliable bandgap engineering of III-nitride-based op
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a53e9693dfa46c1a5ef776ab8540db8
https://doi.org/10.1088/1361-6528/ac91d7
https://doi.org/10.1088/1361-6528/ac91d7
Autor:
Srabanti Chowdhury, Jaeyi Chun
Publikováno v:
DRC
GaN technology has been a focus for high-power and high-frequency electronic devices. Being a wide bandgap material, it offers a critical electric field over 3 MV/cm, and an electron mobility more than 1200 cm2/Vs in the bulk, and 2000 cm2/Vs in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::353fe0781be193b479fb4b6ad97239f3
https://doi.org/10.1109/drc46940.2019.9046344
https://doi.org/10.1109/drc46940.2019.9046344
Autor:
Srabanti Chowdhury, Jaeyi Chun
Publikováno v:
2019 Compound Semiconductor Week (CSW).
In this presentation we will see how vertical GaN devices have made progress over the last decade. Beyond CAVET and MOSFET, we are observing very interesting device performances in more simple geometry device like Static Induction transistor (SIT). W
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b36cbeb98108766c815af28c7f4867a6
https://doi.org/10.1109/iciprm.2019.8819334
https://doi.org/10.1109/iciprm.2019.8819334
Autor:
Tiehui, Su, Guangyao, Liu, Katherine E, Badham, Samuel T, Thurman, Richard L, Kendrick, Alan, Duncan, Danielle, Wuchenich, Chad, Ogden, Guy, Chriqui, Shaoqi, Feng, Jaeyi, Chun, Weicheng, Lai, S J B, Yoo
Publikováno v:
Optics express. 26(10)
This paper reports design, fabrication, and experimental demonstration of a silicon nitride photonic integrated circuit (PIC). The PIC is capable of conducting one-dimensional interferometric imaging with twelve baselines near λ = 1100-1600 nm. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::bec56ca8200b58da9c0d78726d76319e
https://pubmed.ncbi.nlm.nih.gov/29801315
https://pubmed.ncbi.nlm.nih.gov/29801315
Autor:
Tak Jeong, Seong-Ju Park, Kwang Jae Lee, Hyung Joo Lee, Jaeyi Chun, Wonmo Kang, Bong-Joong Kim, Young-Chul Leem, Jong Hyeob Baek
Publikováno v:
ACS Applied Materials & Interfaces. 6:19482-19487
We report on the vertically stacked color tunable light-emitting diodes (LEDs) fabricated using wafer bonding with an indium tin oxide (ITO) layer and transfer printing by the laser lift-off process. Employing optically transparent and electrically c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eb7da63840accd7acecad8bff86c2863
https://doi.org/10.1021/am505415q
https://doi.org/10.1021/am505415q